型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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是否符合REACH标准
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ECCN代码
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YTEOL
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包装说明
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零件包装代码
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针数
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制造商包装代码
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Country Of Origin
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HTS代码
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IRF1404STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 75 A | 4 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 519 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 650 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF1404STRLPBF | 2065 | not_compliant | EAR99 | 5.6 | ||||||||||||||||||
IRL540NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 36 A | 53 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 310 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRL540NSTRLPBF | 2065 | not_compliant | EAR99 | 5.75 | SMALL OUTLINE, R-PSSO-G2 | |||||||||||||||||
IRL640SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 17 A | 180 mΩ | LOGIC LEVEL COMPATIBLE | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 68 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 3 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 2516 | compliant | EAR99 | 5.97 | SMALL OUTLINE, R-PSSO-G2 | D2PAK | 3 | ||||||||||||||||
NTD20N06T4G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 20 A | 46 mΩ | 170 mJ | 120 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 60 W | 60 A | SWITCHING | SILICON | 140 ns | 140 ns | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | NTD20N06T4G | 2260 | not_compliant | EAR99 | 5.55 | DPAK-3 | DPAK (SINGLE GAUGE) TO-252 | 3 | 369C | Mainland China, Malaysia, Vietnam | 8541.29.00.95 | ||||||
IRFR5305TRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 31 A | 65 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 280 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 110 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR5305TRLPBF | 2065 | not_compliant | EAR99 | 5.4 | |||||||||||||||
IRFR9024NTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 11 A | 175 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 38 W | 44 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR9024NTRLPBF | 2065 | not_compliant | EAR99 | 5.4 | |||||||||||||||
BUK9608-55B,118
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 9.3 mΩ | LOGIC LEVEL COMPATIBLE | 352 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 439 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | AEC-Q101 | 1 | 175 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | BUK9608-55B,118 | 229119436 | not_compliant | EAR99 | 5.6 | SMALL OUTLINE, R-PSSO-G2 | D2PAK | 3 | SOT404 | Philippines | ||||||||||||
RFD14N05LSM
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 14 A | 100 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | RFD14N05LSM | 2260 | not_compliant | EAR99 | 5.4 | TO-252, 3 PIN | 369AS | Mainland China | |||||||||||||||
IRFZ48NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 64 A | 14 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 190 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 210 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFZ48NSTRLPBF | 2065 | not_compliant | EAR99 | 5.55 | SMALL OUTLINE, R-PSSO-G2 | Mainland China | ||||||||||||||||
IRFR5305TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 31 A | 65 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 280 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 110 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR5305TRPBF | 2065 | not_compliant | EAR99 | 5.4 | Mainland China | |||||||||||||
IRFR110TRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 4.3 A | 540 mΩ | AVALANCHE RATED | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 17 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | compliant | EAR99 | 5.4 | TO-252AA | 3 | |||||||||||||
FDD4685
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 8.4 A | 42 mΩ | 121 mJ | 205 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 69 W | 100 A | SILICON | 81 ns | 43 ns | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FDD4685 | 2260 | not_compliant | EAR99 | 5.55 | DPAK, TO-252, 2 PIN | 369AS | Mainland China | ||||||||||
RFD14N05LSM9A
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 14 A | 100 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | RFD14N05LSM9A | 2260 | not_compliant | EAR99 | 5.4 | TO-252, 3 PIN | 369AS | Mainland China | |||||||||||||||
IRF9520SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 6.8 A | 600 mΩ | AVALANCHE RATED | 300 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 27 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 3 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 5.4 | SMALL OUTLINE, R-PSSO-G2 | D2PAK | 3 | ||||||||||||
IRFR320TRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 400 V | 1 | 3.1 A | 1.8 Ω | AVALANCHE RATED | 160 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 12 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2516 | compliant | EAR99 | 6.3 | SMALL OUTLINE, R-PSSO-G2 | TO-252AA | 3 | ||||||||||||
IRF9640STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE | 2 | 200 V | 1 | 11 A | 500 mΩ | 700 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 44 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 5.97 | D2PAK | 4 | Mainland China | |||||||||||||
STB85NF55LT4
STMicroelectronics
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 80 A | 10 mΩ | LOGIC LEVEL COMPATIBLE | 980 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 320 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | STB85NF55LT4 | 2443 | not_compliant | EAR99 | 5.6 | SMALL OUTLINE, R-PSSO-G2 | D2PAK | 4 | Mainland China | ||||||||||||
IRFR3910TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 16 A | 115 mΩ | AVALANCHE RATED | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 60 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR3910TRPBF | 2065 | not_compliant | EAR99 | 5.6 | ||||||||||||||
IRLR024NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 17 A | 80 mΩ | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 68 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 72 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR024NTRPBF | 2065 | not_compliant | EAR99 | 5.4 | Mainland China, Taiwan, USA | ||||||||||||||
IRFR9024TRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 8.8 A | 280 mΩ | AVALANCHE RATED | 300 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 35 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | compliant | EAR99 | 5.4 |