型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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包装说明
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是否符合REACH标准
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ECCN代码
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YTEOL
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零件包装代码
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针数
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制造商包装代码
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Country Of Origin
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HTS代码
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SSM6J505NU,LF
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 12 V | 1 | 12 A | 16 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 30 A | SWITCHING | SILICON | S-PDSO-N6 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | NO LEAD | DUAL | SSM6J505NU,LF | 2484 | SMALL OUTLINE, S-PDSO-N6 | unknown | EAR99 | 5.4 | |||||||||||||||||||||||
IRF9530SPBF
Vishay Siliconix
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 12 A | 300 mΩ | AVALANCHE RATED | 400 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 W | 48 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2526 | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 5.6 | D2PAK | 4 | |||||||||||||
PMPB10XNEZ
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 20 V | 1 | 9 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 36 A | SWITCHING | SILICON | S-PDSO-N6 | e3 | IEC-60134 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | TIN | NO LEAD | DUAL | PMPB10XNEZ | 229119436 | SMALL OUTLINE, S-PDSO-N6 | compliant | EAR99 | 5.4 | DFN | 6 | SOT1220 | ||||||||||||||||
IRFZ44NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 49 A | 17.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 94 W | 160 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFZ44NSTRLPBF | 2065 | not_compliant | EAR99 | 5.55 | |||||||||||||||
FQT7N10LTF
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 1.7 A | 380 mΩ | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | 6.8 A | SWITCHING | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FQT7N10LTF | 2260 | not_compliant | EAR99 | 5.6 | 318H-01 | South Korea | ||||||||||||||
IRF9640SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE | 2 | 200 V | 1 | 11 A | 500 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.97 | D2PAK | 4 | 8541.29.00.95 | |||||||||||||
IRFR9220PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 3.6 A | 1.5 Ω | AVALANCHE RATED | 310 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 14 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.95 | TO-252AA | 3 | |||||||||||
IRF9540STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 19 A | 200 mΩ | AVALANCHE RATED | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | 5.6 | 3 | |||||||||||||
PSMN1R7-60BS,118
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 120 A | 2 mΩ | 913 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.076 kA | SWITCHING | SILICON | R-PSSO-G2 | e3 | 1 | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | PSMN1R7-60BS,118 | 229119436 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.6 | D2PAK | 3 | SOT404 | Philippines | |||||||||||||||
FDD8880
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 35 A | 12 mΩ | 53 mJ | 150 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 55 W | SWITCHING | SILICON | 108 ns | 147 ns | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FDD8880 | 2260 | DPAK-3 | not_compliant | EAR99 | 5.4 | 369AS | Mainland China | |||||||||
IRF9530NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 14 A | 200 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 56 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF9530NSTRLPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.6 | ||||||||||||||
IRFR5505TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 18 A | 110 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 57 W | 64 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR5505TRPBF | 2065 | not_compliant | EAR99 | 5.4 | |||||||||||||
IRF540SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 28 A | 77 mΩ | AVALANCHE RATED | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 110 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.75 | D2PAK | 3 | ||||||||||||||
IRFR320PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 400 V | 1 | 3.1 A | 1.8 Ω | AVALANCHE RATED | 160 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 12 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 6.3 | TO-252AA | 3 | |||||||||||
IRFR4105TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 20 A | 45 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 65 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 68 W | 100 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR4105TRPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.55 | |||||||||||||
NTR4501NT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 3.2 A | 80 mΩ | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.25 W | 10 A | SWITCHING | SILICON | 30 ns | 37 ns | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | NTR4501NT1G | 2260 | SOT-23, 3 PIN | compliant | EAR99 | 5.32 | SOT-23 (TO-236) 3 LEAD | 3 | 318-08 | Mainland China | ||||||||
FDD4141
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 50 A | 12.3 mΩ | 337 mJ | 310 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 69 W | 100 A | SWITCHING | SILICON | 87 ns | 32 ns | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FDD4141 | 2260 | TO-252, DPAK-3/2 | not_compliant | EAR99 | 5.55 | 369AS | Mainland China | ||||||||
NTHD3100CT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL AND P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 20 V | 2 | 2.9 A | 80 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.1 W | 12 A | SWITCHING | SILICON | R-XDSO-C8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | UNSPECIFIED | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | NTHD3100CT1G | 2260 | CHIPFET-8 | compliant | EAR99 | 5.32 | ChipFET | 8 | 1206A-03 | Malaysia | |||||||||||||
IRF9510STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE | 2 | 100 V | 1 | 4 A | 1.2 Ω | 200 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 16 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | 5.1 | D2PAK | 4 | ||||||||||||
IRLR120TRPBF
Vishay Siliconix
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 2526 | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 5.6 | TO-252 | 3 |