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功率场效应晶体管:

183,288 个筛选结果
功率场效应晶体管(VF)又称VMOS场效应管。在实际应用中,它有着比晶体管和MOS场效应管更好的特性。
IGBT (26,931)
所有筛选条件
  • 所有筛选条件
  • 型号
  • 其他特性
  • 模拟集成电路 - 其他类型
  • 雪崩能效等级(Eas)
  • 外壳连接
  • 最大集电极电流 (IC)
  • 基于收集器的最大容量
  • 集电极-发射极最大电压
  • 配置
  • 最小直流电流增益 (hFE)
  • 最小漏源击穿电压
  • 最大漏极电流 (Abs) (ID)
  • 最大漏极电流 (ID)
  • 最大漏源导通电阻
  • FET 技术
  • 最大降落时间(tf)
  • 最大反馈电容 (Crss)
  • 门极发射器阈值电压最大值
  • 门极-发射极最大电压
  • 最高频带
  • JEDEC-95代码
  • JESD-30 代码
  • JESD-609代码
  • 长度
  • 制造商
  • 湿度敏感等级
  • 元件数量
  • 功能数量
  • 端子数量
  • 工作模式
  • 最高工作温度
  • 最低工作温度
  • 封装主体材料
  • 封装代码
  • 封装形状
  • 封装形式
  • 生命周期
  • 是否无铅
  • 峰值回流温度(摄氏度)
  • 极性/信道类型
  • 功耗环境最大值
  • 最大功率耗散 (Abs)
  • 最小功率增益 (Gp)
  • 最大脉冲漏极电流 (IDM)
  • 认证状态
型号
203 000207651 5102 2553 000
-
0.12900.173145218290
-
3010530496886105
-
251 200253196139061 200
-
配置 (50)
2.257502.25189376563750
-
最小漏源击穿电压 (50)
81 70084318541 2771 700
-
0.031200.03306090120
-
最大漏极电流 (ID) (50)
11201316190120
-
最大漏源导通电阻 (50)
0.00730.0071.5 0353
-
7060070203335468600
-
25002127251376500
-
5.86.55.86.156.3256.5
-
制造商 (50)
元件数量 (9)
111146911
-
端子数量 (45)
6030060120180240300
-
-6540-65-39-121440
-
极性/信道类型 (5)
1.15201.1131261390520
-
15001126251375500
-
81589.7511.515
-
44004103202301400
-
型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
最大关闭时间(toff)
最大开启时间(吨)
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
是否符合REACH标准
ECCN代码
YTEOL
包装说明
零件包装代码
针数
COO
IRFR3607TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 56 A 9 mΩ 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 310 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR3607TRPBF 2065 not_compliant EAR99 5.9
IRFR9014TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 5.1 A 500 mΩ AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 20 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 5.4
IRF7316TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 30 V 2 4.9 A 58 mΩ AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 30 A SWITCHING SILICON MS-012AA R-PDSO-G8 1 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL IRF7316TRPBF 2065 compliant EAR99 5.32 SO-8
IRFR024PBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 14 A 100 mΩ 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 56 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE 2516 not_compliant EAR99 5.4 TO-252AA 3
IRLR024NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 17 A 80 mΩ LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 68 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 45 W 72 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRLR024NTRPBF 2065 not_compliant EAR99 5.4 Mainland China, Taiwan, USA
IRFR310PBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE 2 400 V 1 1.7 A 3.6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 6.3 TO-252AA 3
IRFR9110PBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 3.1 A 1.2 Ω AVALANCHE RATED 140 mJ 18 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 12 A SWITCHING SILICON 32 ns 37 ns TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 5.1 DPAK-3/2 TO-252AA 3
IRFR9014PBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 5.1 A 500 mΩ AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 20 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 5.4 TO-252AA 3
IRFR1N60APBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 6.3 TO-252AA 3
IRFR15N20DTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 17 A 165 mΩ 260 mJ 31 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 68 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR15N20DTRPBF 2065 not_compliant EAR99 5.97 Mainland China
IRF3205STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 8 mΩ AVALANCHE RATED 264 mJ 211 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 390 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF3205STRLPBF 2065 not_compliant EAR99 5.6 D2PAK-3/2 Mainland China
IRF7341TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 55 V 2 5.1 A 50 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2 W 42 A SWITCHING SILICON MS-012AA R-PDSO-G8 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL IRF7341TRPBF 2065 compliant EAR99 5.55 SOP-8 Mainland China, USA
IRLL014TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 60 V 1 2.7 A 200 mΩ 100 mJ 42 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.1 W 22 A SWITCHING SILICON TO-261AA R-PDSO-G4 e3 Not Qualified 1 150 °C -55 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2516 not_compliant EAR99 5.4 SOT-223, 4 PIN
IRFR48ZTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 42 A 11 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 74 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 91 W 250 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR48ZTRPBF 2065 not_compliant EAR99 5.55 LEAD FREE, PLASTIC, DPAK-3
IRFR1N60ATRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 6.3 TO-252AA 3
IRFR120NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 9.4 A 210 mΩ AVALANCHE RATED 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W 38 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR120NTRPBF 2065 not_compliant EAR99 5.6 Mainland China
IRLR3105TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 25 A 37 mΩ 61 mJ 28 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 57 W 100 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRLR3105TRPBF 2065 not_compliant EAR99 5.55 Mainland China
IRFZ48NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 64 A 14 mΩ AVALANCHE RATED 190 mJ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.8 W 130 W 210 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFZ48NSTRLPBF 2065 not_compliant EAR99 5.55 Mainland China
IRF9630STRLPBF
Vishay Intertechnologies
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 6.5 A 800 mΩ AVALANCHE RATED 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 74 W 26 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 5.85
IRFR2405TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 30 A 16 mΩ AVALANCHE RATED, HIGH RELIABILITY 130 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W 220 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR2405TRPBF 2065 not_compliant EAR99 5.55
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
最大关闭时间(toff)
最大开启时间(吨)
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
是否符合REACH标准
ECCN代码
YTEOL
包装说明
零件包装代码
针数
COO
IRFR3607TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 56 A 9 mΩ 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 310 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR3607TRPBF 2065 not_compliant EAR99 5.9
IRFR9014TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 5.1 A 500 mΩ AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 20 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 5.4
IRF7316TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 30 V 2 4.9 A 58 mΩ AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 30 A SWITCHING SILICON MS-012AA R-PDSO-G8 1 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL IRF7316TRPBF 2065 compliant EAR99 5.32 SO-8
IRFR024PBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 14 A 100 mΩ 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 56 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE 2516 not_compliant EAR99 5.4 TO-252AA 3
IRLR024NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 17 A 80 mΩ LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 68 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 45 W 72 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRLR024NTRPBF 2065 not_compliant EAR99 5.4 Mainland China, Taiwan, USA
IRFR310PBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE 2 400 V 1 1.7 A 3.6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 6.3 TO-252AA 3
IRFR9110PBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 3.1 A 1.2 Ω AVALANCHE RATED 140 mJ 18 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 12 A SWITCHING SILICON 32 ns 37 ns TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 5.1 DPAK-3/2 TO-252AA 3
IRFR9014PBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 5.1 A 500 mΩ AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 20 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 5.4 TO-252AA 3
IRFR1N60APBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 6.3 TO-252AA 3
IRFR15N20DTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 17 A 165 mΩ 260 mJ 31 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 68 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR15N20DTRPBF 2065 not_compliant EAR99 5.97 Mainland China
IRF3205STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 8 mΩ AVALANCHE RATED 264 mJ 211 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 390 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF3205STRLPBF 2065 not_compliant EAR99 5.6 D2PAK-3/2 Mainland China
IRF7341TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 55 V 2 5.1 A 50 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2 W 42 A SWITCHING SILICON MS-012AA R-PDSO-G8 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL IRF7341TRPBF 2065 compliant EAR99 5.55 SOP-8 Mainland China, USA
IRLL014TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 60 V 1 2.7 A 200 mΩ 100 mJ 42 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.1 W 22 A SWITCHING SILICON TO-261AA R-PDSO-G4 e3 Not Qualified 1 150 °C -55 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2516 not_compliant EAR99 5.4 SOT-223, 4 PIN
IRFR48ZTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 42 A 11 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 74 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 91 W 250 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR48ZTRPBF 2065 not_compliant EAR99 5.55 LEAD FREE, PLASTIC, DPAK-3
IRFR1N60ATRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 6.3 TO-252AA 3
IRFR120NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 9.4 A 210 mΩ AVALANCHE RATED 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W 38 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR120NTRPBF 2065 not_compliant EAR99 5.6 Mainland China
IRLR3105TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 25 A 37 mΩ 61 mJ 28 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 57 W 100 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRLR3105TRPBF 2065 not_compliant EAR99 5.55 Mainland China
IRFZ48NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 64 A 14 mΩ AVALANCHE RATED 190 mJ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.8 W 130 W 210 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFZ48NSTRLPBF 2065 not_compliant EAR99 5.55 Mainland China
IRF9630STRLPBF
Vishay Intertechnologies
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 6.5 A 800 mΩ AVALANCHE RATED 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 74 W 26 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 5.85
IRFR2405TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 30 A 16 mΩ AVALANCHE RATED, HIGH RELIABILITY 130 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W 220 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR2405TRPBF 2065 not_compliant EAR99 5.55
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