型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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是否符合REACH标准
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ECCN代码
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YTEOL
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包装说明
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零件包装代码
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针数
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COO
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IRFR3607TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 75 V | 1 | 56 A | 9 mΩ | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 310 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR3607TRPBF | 2065 | not_compliant | EAR99 | 5.9 | |||||||||||||
IRFR9014TRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 5.1 A | 500 mΩ | AVALANCHE RATED | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 20 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 5.4 | |||||||||||||
IRF7316TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 4.9 A | 58 mΩ | AVALANCHE RATED | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 30 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | IRF7316TRPBF | 2065 | compliant | EAR99 | 5.32 | SO-8 | |||||||||||||||||||
IRFR024PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 14 A | 100 mΩ | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 56 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 5.4 | TO-252AA | 3 | |||||||||||
IRLR024NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 17 A | 80 mΩ | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 68 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 72 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR024NTRPBF | 2065 | not_compliant | EAR99 | 5.4 | Mainland China, Taiwan, USA | |||||||||||
IRFR310PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 2 | 400 V | 1 | 1.7 A | 3.6 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 6.3 | TO-252AA | 3 | |||||||||||||
IRFR9110PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 3.1 A | 1.2 Ω | AVALANCHE RATED | 140 mJ | 18 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 12 A | SWITCHING | SILICON | 32 ns | 37 ns | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 5.1 | DPAK-3/2 | TO-252AA | 3 | |||||
IRFR9014PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 5.1 A | 500 mΩ | AVALANCHE RATED | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 20 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 5.4 | TO-252AA | 3 | |||||||||
IRFR1N60APBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 1.4 A | 7 Ω | 93 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 36 W | 5.6 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 6.3 | TO-252AA | 3 | |||||||||||
IRFR15N20DTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 17 A | 165 mΩ | 260 mJ | 31 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 68 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR15N20DTRPBF | 2065 | not_compliant | EAR99 | 5.97 | Mainland China | ||||||||||
IRF3205STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 8 mΩ | AVALANCHE RATED | 264 mJ | 211 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 390 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF3205STRLPBF | 2065 | not_compliant | EAR99 | 5.6 | D2PAK-3/2 | Mainland China | |||||||||
IRF7341TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 5.1 A | 50 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | 42 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | IRF7341TRPBF | 2065 | compliant | EAR99 | 5.55 | SOP-8 | Mainland China, USA | |||||||||||
IRLL014TRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 2.7 A | 200 mΩ | 100 mJ | 42 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.1 W | 22 A | SWITCHING | SILICON | TO-261AA | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2516 | not_compliant | EAR99 | 5.4 | SOT-223, 4 PIN | |||||||||||
IRFR48ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 42 A | 11 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 74 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 91 W | 250 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR48ZTRPBF | 2065 | not_compliant | EAR99 | 5.55 | LEAD FREE, PLASTIC, DPAK-3 | |||||||||||
IRFR1N60ATRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 1.4 A | 7 Ω | 93 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 36 W | 5.6 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 6.3 | TO-252AA | 3 | |||||||||||
IRFR120NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR120NTRPBF | 2065 | not_compliant | EAR99 | 5.6 | Mainland China | ||||||||||
IRLR3105TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 25 A | 37 mΩ | 61 mJ | 28 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 57 W | 100 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR3105TRPBF | 2065 | not_compliant | EAR99 | 5.55 | Mainland China | ||||||||||
IRFZ48NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 64 A | 14 mΩ | AVALANCHE RATED | 190 mJ | 120 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.8 W | 130 W | 210 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFZ48NSTRLPBF | 2065 | not_compliant | EAR99 | 5.55 | Mainland China | |||||||||
IRF9630STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 6.5 A | 800 mΩ | AVALANCHE RATED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 74 W | 26 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 5.85 | |||||||||||||||
IRFR2405TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 30 A | 16 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 220 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR2405TRPBF | 2065 | not_compliant | EAR99 | 5.55 |