型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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mfrid
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零件包装代码
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包装说明
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针数
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是否符合REACH标准
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ECCN代码
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YTEOL
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Source Content uid
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COO
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IRF644SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 250 V | 1 | 14 A | 280 mΩ | AVALANCHE RATED | 550 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 56 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | D2PAK | SMD-220, D2PAK-3 | 4 | not_compliant | EAR99 | 5.97 | ||||||
IRLR3114ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 42 A | 6.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 260 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 500 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | LEAD FREE, PLASTIC, DPAK-3 | not_compliant | EAR99 | 5.6 | IRLR3114ZTRPBF | ||||||||
IRFR5410TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 13 A | 205 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 194 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 66 W | 52 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.6 | IRFR5410TRPBF | Mainland China, USA | |||||||
IRL640SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 17 A | 180 mΩ | LOGIC LEVEL COMPATIBLE | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 68 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 3 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 2516 | D2PAK | 3 | compliant | EAR99 | 5.97 | |||||||||||
IRFR120NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.6 | IRFR120NTRPBF | Mainland China | |||||||
IRF9530NPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 14 A | 200 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 56 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | 2065 | compliant | EAR99 | 5.05 | IRF9530NPBF | |||||||||
IRF9Z34NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 19 A | 100 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 180 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 68 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.4 | IRF9Z34NSTRLPBF | ||||||||||||
IRFR420APBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 3.3 A | 3 Ω | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 83 W | 10 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 6.3 | |||||||||||
IRLR3410TRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 17 A | 125 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 150 mJ | 90 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 60 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.6 | IRLR3410TRLPBF | |||||||
IRLR2905ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 42 A | 13.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 240 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.55 | IRLR2905ZTRPBF | Mainland China | ||||||||
IRF9640STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE | 2 | 200 V | 1 | 11 A | 500 mΩ | 700 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 44 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | D2PAK | 4 | not_compliant | EAR99 | 5.97 | Mainland China | |||||||
IRL1404ZSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 120 A | 3.1 mΩ | 220 mJ | 570 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 230 W | 790 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | D2PAK-3/2 | not_compliant | EAR99 | 5.6 | IRL1404ZSTRLPBF | |||||||
IRFR420PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 2.4 A | 3 Ω | AVALANCHE RATED | 400 mJ | 37 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 8 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | TO-252AA | DPAK-3/2 | 4 | not_compliant | EAR99 | 6.3 | ||||
IRLR3705ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 42 A | 8 mΩ | HIGH RELIABILITY | 110 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 360 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.6 | IRLR3705ZTRPBF | Mainland China | ||||||||
IRFR120TRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | 34 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 5.6 | ||||||||
IRF1404STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 75 A | 4 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 519 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 650 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.6 | IRF1404STRLPBF | ||||||||||||
IRF640SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 175 °C | -55 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | LEAD FREE, PLASTIC, D2PAK-3 | not_compliant | EAR99 | 5.97 | ||||||||||
IRF5305STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 31 A | 60 mΩ | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | 280 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 110 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | LEAD FREE, PLASTIC, D2PAK-3 | not_compliant | EAR99 | 5.4 | IRF5305STRLPBF | Mainland China | |||||||
IRF540NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 44 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 185 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 110 A | SWITCHING | SILICON | TO-263 | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.85 | IRF540NSTRLPBF | Mainland China | ||||||||
IRFR9024NTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 11 A | 175 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 38 W | 44 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.4 | IRFR9024NTRLPBF |