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Power Field-Effect Transistors:

183,288 results
功率场效应晶体管(VF)又称VMOS场效应管。在实际应用中,它有着比晶体管和MOS场效应管更好的特性。
IGBTs (26,931)
All filter conditions
  • All filter conditions
  • Parts
  • Additional Feature
  • Analog IC - Other Type
  • Avalanche Energy Rating (Eas)
  • Case Connection
  • Collector Current-Max (IC)
  • Collector-Base Capacitance-Max
  • Collector-Emitter Voltage-Max
  • Configuration
  • DC Current Gain-Min (hFE)
  • DS Breakdown Voltage-Min
  • Drain Current-Max (Abs) (ID)
  • Drain Current-Max (ID)
  • Drain-source On Resistance-Max
  • FET Technology
  • Fall Time-Max (tf)
  • Feedback Cap-Max (Crss)
  • Gate-Emitter Thr Voltage-Max
  • Gate-Emitter Voltage-Max
  • Highest Frequency Band
  • JEDEC-95 Code
  • JESD-30 Code
  • JESD-609 Code
  • Length
  • Manufacturer
  • Moisture Sensitivity Level
  • Number of Elements
  • Number of Functions
  • Number of Terminals
  • Operating Mode
  • Operating Temperature-Max
  • Operating Temperature-Min
  • Package Body Material
  • Package Code
  • Package Shape
  • Package Style
  • Part Life Cycle Code
  • Pbfree Code
  • Peak Reflow Temperature (Cel)
  • Polarity/Channel Type
  • Power Dissipation Ambient-Max
  • Power Dissipation-Max (Abs)
  • Power Gain-Min (Gp)
  • Pulsed Drain Current-Max (IDM)
  • Qualification Status
Parts
203 000207651 5102 2553 000
-
0.12900.173145218290
-
3010530496886105
-
251 200253196139061 200
-
Configuration (50)
2.257502.25189376563750
-
DS Breakdown Voltage-Min (50)
81 70084318541 2771 700
-
0.031200.03306090120
-
Drain Current-Max (ID) (50)
11201316190120
-
Drain-source On Resistance-Max (50)
0.00730.0071.5 0353
-
7060070203335468600
-
25002127251376500
-
5.86.55.86.156.3256.5
-
Manufacturer (50)
Number of Elements (9)
111146911
-
Number of Terminals (45)
6030060120180240300
-
-6540-65-39-121440
-
Polarity/Channel Type (5)
1.15201.1131261390520
-
15001126251375500
-
81589.7511.515
-
44004103202301400
-
Parts
Parts Most Relevant Technical Compliance Operating Conditions Physical Other
Datasheet Price/Stock
Risk Rank Pbfree Code Rohs Code
Part Life Cycle Code Polarity/Channel Type Surface Mount
Configuration Number of Terminals DS Breakdown Voltage-Min Number of Elements Drain Current-Max (ID) Drain-source On Resistance-Max Additional Feature Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) FET Technology Operating Mode Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Pulsed Drain Current-Max (IDM) Transistor Application
Transistor Element Material
Turn-off Time-Max (toff)
Turn-on Time-Max (ton)
JEDEC-95 Code JESD-30 Code JESD-609 Code Qualification Status Moisture Sensitivity Level Operating Temperature-Max Operating Temperature-Min Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s)
Case Connection Package Body Material Package Shape Package Style Terminal Finish
Terminal Form
Terminal Position
mfrid
Part Package Code
Pin Count
Reach Compliance Code
ECCN Code
YTEOL
Source Content uid
Package Description
Country Of Origin
IRFR9024PBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE 2 60 V 1 8.8 A 280 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.4
IRFZ44NSTRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 49 A 17.5 mΩ AVALANCHE RATED 150 mJ 88 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.8 W 94 W 160 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.55 IRFZ44NSTRLPBF D2PAK-3/2
IRF1310NSTRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 42 A 36 mΩ AVALANCHE RATED, HIGH RELIABILITY 420 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 160 W 140 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.85 IRF1310NSTRLPBF Mainland China
IRFR9220PBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 3.6 A 1.5 Ω AVALANCHE RATED 310 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 14 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.95
IRFR9110TRPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 3.1 A 1.2 Ω AVALANCHE RATED 140 mJ 18 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 12 A SWITCHING SILICON 32 ns 37 ns TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.1 DPAK-3/2
IRLR3114ZTRPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 42 A 6.5 mΩ AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE 260 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 500 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.6 IRLR3114ZTRPBF LEAD FREE, PLASTIC, DPAK-3
IRFZ34NPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 29 A 40 mΩ 65 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 68 W 100 A SWITCHING SILICON TO-220AB R-PSFM-T3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE 2065 compliant EAR99 5.15 IRFZ34NPBF
IRF3710STRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 57 A 23 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 280 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 180 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.85 IRF3710STRLPBF Mainland China
IRFR5505TRPBF
Infineon Technologies AG
Query price and inventory
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 18 A 110 mΩ 150 mJ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 57 W 64 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.4 IRFR5505TRPBF
IRF9540STRLPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 19 A 200 mΩ AVALANCHE RATED 640 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 72 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 3 not_compliant EAR99 5.6
IRFR210PBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 2.6 A 1.5 Ω AVALANCHE RATED 130 mJ 15 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 10 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.95 Mainland China
IRFR120PBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ 34 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.6
IRF9Z24SPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 11 A 280 mΩ AVALANCHE RATED, HIGH RELIABILITY 240 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 60 W 44 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 3 compliant EAR99 5.4 LEAD FREE, D2PAK-3
IRF9Z34SPBF
Vishay Intertechnologies
Query price and inventory
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 18 A 140 mΩ 370 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 88 W 72 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 compliant EAR99 5.4
IRF640SPBF
Vishay Intertechnologies
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 18 A 180 mΩ AVALANCHE RATED 580 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 72 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 175 °C -55 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 5.97 LEAD FREE, PLASTIC, D2PAK-3
IRFRC20TRPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 2 A 4.4 Ω AVALANCHE RATED 450 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 8 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 6.3
IRL540NSTRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 36 A 53 mΩ AVALANCHE RATED, HIGH RELIABILITY 310 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 120 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.75 IRL540NSTRLPBF
IRFR5410TRPBF
Infineon Technologies AG
Query price and inventory
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 13 A 205 mΩ HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 194 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 66 W 52 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.6 IRFR5410TRPBF Mainland China, USA
IRL640SPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 17 A 180 mΩ LOGIC LEVEL COMPATIBLE 580 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 68 A SWITCHING SILICON TO-263AB R-PSSO-G2 Not Qualified 3 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE 2516 D2PAK 3 compliant EAR99 5.97
IRF4905STRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 42 A 20 mΩ HIGH RELIABILITY, AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 280 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.55 IRF4905STRLPBF Mainland China
Parts Most Relevant Technical Compliance Operating Conditions Physical Other
Datasheet Price/Stock
Risk Rank Pbfree Code Rohs Code
Part Life Cycle Code Polarity/Channel Type Surface Mount
Configuration Number of Terminals DS Breakdown Voltage-Min Number of Elements Drain Current-Max (ID) Drain-source On Resistance-Max Additional Feature Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) FET Technology Operating Mode Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Pulsed Drain Current-Max (IDM) Transistor Application
Transistor Element Material
Turn-off Time-Max (toff)
Turn-on Time-Max (ton)
JEDEC-95 Code JESD-30 Code JESD-609 Code Qualification Status Moisture Sensitivity Level Operating Temperature-Max Operating Temperature-Min Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s)
Case Connection Package Body Material Package Shape Package Style Terminal Finish
Terminal Form
Terminal Position
mfrid
Part Package Code
Pin Count
Reach Compliance Code
ECCN Code
YTEOL
Source Content uid
Package Description
Country Of Origin
IRFR9024PBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE 2 60 V 1 8.8 A 280 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.4
IRFZ44NSTRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 49 A 17.5 mΩ AVALANCHE RATED 150 mJ 88 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.8 W 94 W 160 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.55 IRFZ44NSTRLPBF D2PAK-3/2
IRF1310NSTRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 42 A 36 mΩ AVALANCHE RATED, HIGH RELIABILITY 420 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 160 W 140 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.85 IRF1310NSTRLPBF Mainland China
IRFR9220PBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 3.6 A 1.5 Ω AVALANCHE RATED 310 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 14 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.95
IRFR9110TRPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 3.1 A 1.2 Ω AVALANCHE RATED 140 mJ 18 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 12 A SWITCHING SILICON 32 ns 37 ns TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.1 DPAK-3/2
IRLR3114ZTRPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 42 A 6.5 mΩ AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE 260 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 500 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.6 IRLR3114ZTRPBF LEAD FREE, PLASTIC, DPAK-3
IRFZ34NPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 29 A 40 mΩ 65 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 68 W 100 A SWITCHING SILICON TO-220AB R-PSFM-T3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE 2065 compliant EAR99 5.15 IRFZ34NPBF
IRF3710STRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 57 A 23 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 280 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 180 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.85 IRF3710STRLPBF Mainland China
IRFR5505TRPBF
Infineon Technologies AG
Query price and inventory
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 18 A 110 mΩ 150 mJ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 57 W 64 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.4 IRFR5505TRPBF
IRF9540STRLPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 19 A 200 mΩ AVALANCHE RATED 640 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 72 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 3 not_compliant EAR99 5.6
IRFR210PBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 2.6 A 1.5 Ω AVALANCHE RATED 130 mJ 15 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 10 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.95 Mainland China
IRFR120PBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ 34 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 5.6
IRF9Z24SPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 11 A 280 mΩ AVALANCHE RATED, HIGH RELIABILITY 240 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 60 W 44 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 3 compliant EAR99 5.4 LEAD FREE, D2PAK-3
IRF9Z34SPBF
Vishay Intertechnologies
Query price and inventory
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 18 A 140 mΩ 370 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 88 W 72 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 compliant EAR99 5.4
IRF640SPBF
Vishay Intertechnologies
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 18 A 180 mΩ AVALANCHE RATED 580 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 72 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 175 °C -55 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 5.97 LEAD FREE, PLASTIC, D2PAK-3
IRFRC20TRPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 2 A 4.4 Ω AVALANCHE RATED 450 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 8 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 TO-252AA 3 not_compliant EAR99 6.3
IRL540NSTRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 36 A 53 mΩ AVALANCHE RATED, HIGH RELIABILITY 310 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 120 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.75 IRL540NSTRLPBF
IRFR5410TRPBF
Infineon Technologies AG
Query price and inventory
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 13 A 205 mΩ HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 194 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 66 W 52 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.6 IRFR5410TRPBF Mainland China, USA
IRL640SPBF
Vishay Intertechnologies
Query price and inventory
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 17 A 180 mΩ LOGIC LEVEL COMPATIBLE 580 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 68 A SWITCHING SILICON TO-263AB R-PSSO-G2 Not Qualified 3 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE 2516 D2PAK 3 compliant EAR99 5.97
IRF4905STRLPBF
Infineon Technologies AG
Query price and inventory
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 42 A 20 mΩ HIGH RELIABILITY, AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 280 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 not_compliant EAR99 5.55 IRF4905STRLPBF Mainland China
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