Parts | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet |
Price/Stock
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Risk Rank | Pbfree Code |
Rohs Code
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Part Life Cycle Code | Polarity/Channel Type |
Surface Mount
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Configuration | Number of Terminals | DS Breakdown Voltage-Min | Number of Elements | Drain Current-Max (ID) | Drain-source On Resistance-Max | Additional Feature | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | FET Technology | Operating Mode | Power Dissipation Ambient-Max | Power Dissipation-Max (Abs) | Pulsed Drain Current-Max (IDM) |
Transistor Application
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Transistor Element Material
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Turn-off Time-Max (toff)
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Turn-on Time-Max (ton)
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JEDEC-95 Code | JESD-30 Code | JESD-609 Code | Qualification Status | Moisture Sensitivity Level | Operating Temperature-Max | Operating Temperature-Min | Peak Reflow Temperature (Cel) |
Time@Peak Reflow Temperature-Max (s)
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Case Connection | Package Body Material | Package Shape | Package Style |
Terminal Finish
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Terminal Form
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Terminal Position
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mfrid
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Part Package Code
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Pin Count
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Reach Compliance Code
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ECCN Code
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YTEOL
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Source Content uid
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Package Description
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Country Of Origin
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IRFR9024PBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE | 2 | 60 V | 1 | 8.8 A | 280 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | TO-252AA | 3 | not_compliant | EAR99 | 5.4 | ||||||||||||
IRFZ44NSTRLPBF
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 49 A | 17.5 mΩ | AVALANCHE RATED | 150 mJ | 88 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.8 W | 94 W | 160 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.55 | IRFZ44NSTRLPBF | D2PAK-3/2 | |||||||||
IRF1310NSTRLPBF
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 42 A | 36 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 420 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 W | 140 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.85 | IRF1310NSTRLPBF | Mainland China | ||||||||||||
IRFR9220PBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 3.6 A | 1.5 Ω | AVALANCHE RATED | 310 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 14 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | TO-252AA | 3 | not_compliant | EAR99 | 5.95 | ||||||||||
IRFR9110TRPBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 3.1 A | 1.2 Ω | AVALANCHE RATED | 140 mJ | 18 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 12 A | SWITCHING | SILICON | 32 ns | 37 ns | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | TO-252AA | 3 | not_compliant | EAR99 | 5.1 | DPAK-3/2 | |||||
IRLR3114ZTRPBF
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 42 A | 6.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 260 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 500 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.6 | IRLR3114ZTRPBF | LEAD FREE, PLASTIC, DPAK-3 | |||||||||||
IRFZ34NPBF
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 29 A | 40 mΩ | 65 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 68 W | 100 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | 2065 | compliant | EAR99 | 5.15 | IRFZ34NPBF | ||||||||||||||||
IRF3710STRLPBF
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 57 A | 23 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 280 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 180 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.85 | IRF3710STRLPBF | Mainland China | |||||||||||
IRFR5505TRPBF
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 18 A | 110 mΩ | 150 mJ | 120 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 57 W | 64 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.4 | IRFR5505TRPBF | |||||||||||
IRF9540STRLPBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 19 A | 200 mΩ | AVALANCHE RATED | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | 3 | not_compliant | EAR99 | 5.6 | ||||||||||||
IRFR210PBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 2.6 A | 1.5 Ω | AVALANCHE RATED | 130 mJ | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 10 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | TO-252AA | 3 | not_compliant | EAR99 | 5.95 | Mainland China | |||||||
IRFR120PBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | 34 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | TO-252AA | 3 | not_compliant | EAR99 | 5.6 | ||||||||
IRF9Z24SPBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 11 A | 280 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 44 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 3 | compliant | EAR99 | 5.4 | LEAD FREE, D2PAK-3 | |||||||||||
IRF9Z34SPBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 18 A | 140 mΩ | 370 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | compliant | EAR99 | 5.4 | ||||||||||||||
IRF640SPBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 175 °C | -55 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | not_compliant | EAR99 | 5.97 | LEAD FREE, PLASTIC, D2PAK-3 | |||||||||||||
IRFRC20TRPBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 2 A | 4.4 Ω | AVALANCHE RATED | 450 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 8 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | TO-252AA | 3 | not_compliant | EAR99 | 6.3 | ||||||||||
IRL540NSTRLPBF
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 36 A | 53 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 310 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.75 | IRL540NSTRLPBF | |||||||||||||||
IRFR5410TRPBF
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 13 A | 205 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 194 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 66 W | 52 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.6 | IRFR5410TRPBF | Mainland China, USA | ||||||||||
IRL640SPBF
Vishay Intertechnologies
|
Query price and inventory |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 17 A | 180 mΩ | LOGIC LEVEL COMPATIBLE | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 68 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 3 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 2516 | D2PAK | 3 | compliant | EAR99 | 5.97 | ||||||||||||||
IRF4905STRLPBF
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 42 A | 20 mΩ | HIGH RELIABILITY, AVALANCHE RATED | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 280 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.55 | IRF4905STRLPBF | Mainland China |