型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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零件包装代码
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包装说明
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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Date Of Intro
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YTEOL
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针数
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HTS代码
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NVMFS5C460NLAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 78 A | 7.2 mΩ | 107 mJ | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 396 A | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C460NLAFT1G | 2260 | SO-8FL / DFN-5 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | 2017-02-24 | 5.6 | |||||||||
NVMFS5C426NAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 235 A | 1.3 mΩ | 739 mJ | 59 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 W | 900 A | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C426NAFT1G | 2260 | SO-8FL / DFN-5 | 488AA | not_compliant | Malaysia | EAR99 | 2017-02-23 | 5.6 | ||||||||||
NVMFS5C404NLWFAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C404NLWFAFT1G | 2260 | DFNW5 4.90x5.90x1.00, 1.27P | SO-8FL, DFN5, 6 PIN | 507BE | not_compliant | Malaysia | EAR99 | 2017-02-24 | 5.6 | |||||||||
IRFBF20SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 900 V | 1 | 1.7 A | 8 Ω | AVALANCHE RATED | 180 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 54 W | 6.8 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | LEAD FREE, D2PAK-3 | compliant | EAR99 | 6.52 | 3 | ||||||||||||
IRF540PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 77 mΩ | AVALANCHE RATED | 230 mJ | 120 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 110 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | 2516 | TO-220AB | not_compliant | EAR99 | 5.1 | 3 | ||||||||||||
IRFBF20STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 900 V | 1 | 1.7 A | 8 Ω | AVALANCHE RATED | 180 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 54 W | 6.8 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | LEAD FREE, D2PAK-3 | compliant | EAR99 | 6.52 | 3 | ||||||||||||
IRF740STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 400 V | 1 | 10 A | 550 mΩ | AVALANCHE RATED | 520 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 40 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | compliant | EAR99 | 6.25 | 3 | |||||||||||||
FDB52N20TM
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 52 A | 49 mΩ | 2520 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 357 W | 208 A | SWITCHING | SILICON | TO-263 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FDB52N20TM | 2260 | D2PAK-3 / TO-263-2 | D2PAK-3/2 | 418AJ | not_compliant | Mainland China | EAR99 | 6.12 | |||||||||
IRF9540SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 19 A | 200 mΩ | AVALANCHE RATED | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | 5.6 | 3 | |||||||||||
IRFR420TRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 2.4 A | 3 Ω | AVALANCHE RATED | 400 mJ | 37 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 8 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 6.3 | ||||||||||
IRFZ44NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 49 A | 17.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 94 W | 160 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFZ44NSTRLPBF | 2065 | not_compliant | EAR99 | 5.55 | ||||||||||||||
IRFR9024NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 11 A | 175 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 38 W | 44 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR9024NTRPBF | 2065 | not_compliant | Mainland China, USA | EAR99 | 5.4 | |||||||||||
IRFR420PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 2.4 A | 3 Ω | AVALANCHE RATED | 400 mJ | 37 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 8 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | TO-252AA | DPAK-3/2 | not_compliant | EAR99 | 6.3 | 4 | ||||||||
IRF9Z34SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 18 A | 140 mΩ | 370 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | compliant | EAR99 | 5.4 | |||||||||||||||
IRF640SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 175 °C | -55 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | LEAD FREE, PLASTIC, D2PAK-3 | not_compliant | EAR99 | 5.97 | ||||||||||||||
IRF520NPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 9.7 A | 200 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 47 W | 38 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | IRF520NPBF | 2065 | FLANGE MOUNT, R-PSFM-T3 | compliant | Mainland China | EAR99 | 5.05 | ||||||||||||||
IRF9530STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 12 A | 300 mΩ | AVALANCHE RATED | 400 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 W | 48 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | compliant | EAR99 | 5.6 | ||||||||||||||
NVMFS5C604NLAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 287 A | 1.7 mΩ | 776 mJ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C604NLAFT1G | 2260 | DFN5 5x6, 1.27P (SO−8FL) | SO-8FL, DFN5, 6 PIN | 506EZ | not_compliant | Malaysia | EAR99 | 2017-02-24 | 5.6 | |||||||||
IRFR210PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 2.6 A | 1.5 Ω | AVALANCHE RATED | 130 mJ | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 10 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | 2516 | TO-252AA | SMALL OUTLINE, R-PSSO-G2 | not_compliant | Mainland China | EAR99 | 5.95 | 3 | ||||||||||
NTD2955T4G
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 12 A | 180 mΩ | 216 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 55 W | 18 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | NTD2955T4G | 2260 | DPAK (SINGLE GAUGE) TO-252 | 369C | not_compliant | Mainland China, Malaysia, Vietnam | EAR99 | 5.4 | 3 | 8541.29.00.75 |