Parts | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Datasheet |
Price/Stock
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Risk Rank | Pbfree Code |
Rohs Code
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Part Life Cycle Code | Memory Density | Memory Width | Organization |
Supply Voltage-Nom (Vsup)
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Access Time-Max | Clock Frequency-Max (fCLK) |
Refresh Cycles
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Access Mode | Memory IC Type | Additional Feature | I/O Type | Interleaved Burst Length | Number of Functions | Number of Ports | Number of Words Code | Number of Words | Operating Mode | Output Characteristics |
Self Refresh
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Sequential Burst Length
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Standby Current-Max
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Standby Voltage-Min
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Supply Current-Max
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Supply Voltage-Max (Vsup)
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Supply Voltage-Min (Vsup)
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Technology |
Temperature Grade
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JESD-30 Code |
Qualification Status
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JESD-609 Code | Moisture Sensitivity Level | Operating Temperature-Max | Operating Temperature-Min | Peak Reflow Temperature (Cel) |
Time@Peak Reflow Temperature-Max (s)
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Number of Terminals | Package Body Material | Package Code | Package Equivalence Code | Package Shape | Package Style |
Surface Mount
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Terminal Finish
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Terminal Form
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Terminal Pitch
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Terminal Position
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Seated Height-Max
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Length |
Width
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mfrid
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Package Description
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Reach Compliance Code
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Country Of Origin
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ECCN Code
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HTS Code
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YTEOL
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Part Package Code
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Pin Count
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AS4C4M16SA-6TIN
Alliance Memory Inc
|
Query price and inventory |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 | |||||||||||||||||||
AS4C4M16SA-7TCN
Alliance Memory Inc
|
Query price and inventory |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 | ||||||||||||||||||||
AS4C16M16SA-7TCN
Alliance Memory Inc
|
Query price and inventory |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 20 mA | 3 V | 55 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.24 | 4 | ||||||||||
AS4C8M16SA-7TCN
Alliance Memory Inc
|
Query price and inventory |
|
Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 | |||||||||||||||||||
AS4C16M16SA-7TCNTR
Alliance Memory Inc
|
Query price and inventory |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 20 mA | 55 µA | 3.6 V | 3 V | CMOS | R-PDSO-G54 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.24 | 4 | ||||||||||||||
MT47H128M16RT-25E:C
Micron Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 12 mA | 330 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | Not Qualified | e1 | 85 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 9 mm | 2190 | 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | compliant | EAR99 | 8542.32.00.36 | 4.75 | BGA | 84 | ||||||
MT48LC8M16A2P-6A:L
Micron Technology Inc
|
Query price and inventory |
|
Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 167 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2.5 mA | 100 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2190 | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | 4 | TSOP2 | 54 | |||||||
MT41K64M16TW-107:J
Micron Technology Inc
|
Query price and inventory |
|
Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.35 V | 933 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | COMMON | 8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 8 | 28 mA | 219 µA | 1.45 V | 1.283 V | CMOS | R-PBGA-B96 | Not Qualified | e1 | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 96 | PLASTIC/EPOXY | TFBGA | BGA96,6X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | 2190 | 8 X 14 MM, LEAD FREE, FBGA-96 | compliant | EAR99 | 8542.32.00.32 | 5.07 | ||||||||||||
AS4C32M16D2A-25BCN
Alliance Memory Inc
|
Query price and inventory |
|
Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 400 ps | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | 3 | 85 °C | 84 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | 1689 | FBGA-84 | compliant | Taiwan | EAR99 | 8542.32.00.28 | 4 | |||||||||||||||||||||
MT41K256M16TW-107:P
Micron Technology Inc
|
Query price and inventory |
|
Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | 195 ps | 933 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B96 | 95 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | 2190 | FBGA-96 | not_compliant | EAR99 | 8542.32.00.36 | 5.15 | ||||||||||||||
IS43TR16256BL-107MBLI
Integrated Silicon Solution Inc
|
Query price and inventory |
|
Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 1.45 V | 1.283 V | CMOS | INDUSTRIAL | R-PBGA-B96 | e1 | 3 | 95 °C | -40 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 9 mm | 2070 | FBGA-96 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.36 | 4 | |||||||||||
IS43R16320E-5TL-TR
Integrated Silicon Solution Inc
|
Query price and inventory |
|
Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PDSO-G66 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 66 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.28 | 4 | ||||||||||||||||||||
IS42S16160J-7TL
Integrated Silicon Solution Inc
|
Query price and inventory |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.24 | 4 | |||||||||||||||||||||
MT47H128M8SH-25E:M
Micron Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 7 mA | 210 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 85 °C | 260 | 30 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 10 mm | 8 mm | 2190 | FBGA-60 | compliant | Mainland China, Malaysia, Taiwan | EAR99 | 8542.32.00.32 | 5 | BGA | 60 | |||||
IS42S16160J-6BLI
Integrated Silicon Solution Inc
|
Query price and inventory |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | e1 | 85 °C | -40 °C | 260 | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | 2070 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.24 | 4 | |||||||||||||||||||
MT47H32M16NF-25E:H
Micron Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 10 mA | 215 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | Not Qualified | e1 | 85 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | 2190 | FBGA-84 | not_compliant | EAR99 | 8542.32.00.28 | 4.75 | BGA | 84 | ||||||
MT46V64M8P-5B:J
Micron Technology Inc
|
Query price and inventory |
|
Yes | Active | 536.8709 Mbit | 8 | 64MX8 | 2.6 V | 700 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 64000000 | 536.8709 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 5 mA | 230 µA | 2.7 V | 2.5 V | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 66 | PLASTIC/EPOXY | TSOP2 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2190 | TSOP-66 | compliant | EAR99 | 8542.32.00.28 | 4.25 | TSOP | 66 | ||||||
MT48LC16M16A2B4-6A:G
Micron Technology Inc
|
Query price and inventory |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 167 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2.5 mA | 150 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B54 | Not Qualified | e1 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | VFBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1 mm | 8 mm | 8 mm | 2190 | 8 X 8 MM, LEAD FREE, VFBGA-54 | compliant | EAR99 | 8542.32.00.24 | 4 | |||||||||
AS4C4M16SA-6TCN
Alliance Memory Inc
|
Query price and inventory |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 | |||||||||||||||||||
MT41K128M16JT-125:K
Micron Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.35 V | 225 ps | 800 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 195 µA | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B96 | Not Qualified | e1 | 95 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | 2190 | compliant | EAR99 | 8542.32.00.36 | 5.1 | BGA | 96 |