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DRAMs:

267,290 results
动态随机存取存储器(Dynamic Random Access Memory,DRAM)是一种半导体存储器,主要的作用原理是利用电容内存储电荷的多寡来代表一个二进制比特(bit)是1还是0。由于在现实中晶体管会有漏电电流的现象,导致电容上所存储的电荷数量并不足以正确的判别数据,而导致数据毁损。因此对于DRAM来说,周期性地充电是一个无可避免的要件。由于这种需要定时刷新的特性,因此被称为“动态”存储器。相对来说,静态存储器(SRAM)只要存入数据后,纵使不刷新也不会丢失记忆。
SRAMs (542,744)
DRAMs (267,290)
EEPROMs (149,118)
FIFOs (72,010)
OTP ROMs (38,069)
EPROMs (22,085)
MASK ROMs (10,088)
PROMs (70)
All filter conditions
  • All filter conditions
  • Parts
  • Access Mode
  • Access Time-Max
  • Additional Feature
  • Alternate Memory Width
  • Clock Frequency-Max (fCLK)
  • I/O Type
  • Interleaved Burst Length
  • JESD-30 Code
  • JESD-609 Code
  • Length
  • Manufacturer
  • Memory Density
  • Memory IC Type
  • Memory Width
  • Mixed Memory Type
  • Moisture Sensitivity Level
  • Number of Functions
  • Number of Ports
  • Number of Terminals
  • Number of Words
  • Number of Words Code
  • Operating Mode
  • Operating Temperature-Max
  • Operating Temperature-Min
  • Organization
  • Output Characteristics
  • Output Enable
  • Package Body Material
  • Package Code
  • Package Equivalence Code
  • Package Shape
  • Package Style
  • Parallel/Serial
  • Part Life Cycle Code
  • Pbfree Code
  • Peak Reflow Temperature (Cel)
Parts Access Mode (19)
Access Time-Max (50)
0.12500.163125188250
-
464419344964
-
Clock Frequency-Max (fCLK) (50)
662 133665831 1001 6162 133
-
8133.3583971102133.35
-
Manufacturer (50)
Memory Density (50)
4 096309 237 645 3124 09677 309 414 400154 618 824 704231 928 235 008309 237 645 312
-
Memory Width (26)
15121129257384512
-
1813568
-
256137 438 953 47225634 359 738 56068 719 476 864103 079 215 168137 438 953 472
-
25632 000 000 0002568 000 000 19216 000 000 12832 000 000 000
-
50125506988106125
-
-5510-55-39-22-610
-
Organization (50)
Parts
Parts Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
Datasheet Price/Stock
Risk Rank Pbfree Code Rohs Code
Part Life Cycle Code Memory Density Memory Width Organization Supply Voltage-Nom (Vsup)
Access Time-Max Clock Frequency-Max (fCLK) Refresh Cycles
Access Mode Memory IC Type Additional Feature I/O Type Interleaved Burst Length Number of Functions Number of Ports Number of Words Code Number of Words Operating Mode Output Characteristics Self Refresh
Sequential Burst Length
Standby Current-Max
Standby Voltage-Min
Supply Current-Max
Supply Voltage-Max (Vsup)
Supply Voltage-Min (Vsup)
Technology Temperature Grade
JESD-30 Code Qualification Status
JESD-609 Code Moisture Sensitivity Level Operating Temperature-Max Operating Temperature-Min Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s)
Number of Terminals Package Body Material Package Code Package Equivalence Code Package Shape Package Style Surface Mount
Terminal Finish
Terminal Form
Terminal Pitch
Terminal Position
Seated Height-Max
Length Width
mfrid
Package Description
Reach Compliance Code
Country Of Origin
ECCN Code
HTS Code
YTEOL
Part Package Code
Pin Count
AS4C4M16SA-6TIN
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C4M16SA-7TCN
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C16M16SA-7TCN
Alliance Memory Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 143 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 20 mA 3 V 55 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
AS4C8M16SA-7TCN
Alliance Memory Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C16M16SA-7TCNTR
Alliance Memory Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 143 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 20 mA 55 µA 3.6 V 3 V CMOS R-PDSO-G54 3 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
MT47H128M16RT-25E:C
Micron Technology Inc
Query price and inventory
Yes Yes Active 2.1475 Gbit 16 128MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 330 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 12.5 mm 9 mm 2190 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 compliant EAR99 8542.32.00.36 4.75 BGA 84
MT48LC8M16A2P-6A:L
Micron Technology Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 100 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 compliant EAR99 8542.32.00.02 4 TSOP2 54
MT41K64M16TW-107:J
Micron Technology Inc
Query price and inventory
Yes Active 1.0737 Gbit 16 64MX16 1.35 V 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM COMMON 8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 8 28 mA 219 µA 1.45 V 1.283 V CMOS R-PBGA-B96 Not Qualified e1 95 °C NOT SPECIFIED NOT SPECIFIED 96 PLASTIC/EPOXY TFBGA BGA96,6X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 8 X 14 MM, LEAD FREE, FBGA-96 compliant EAR99 8542.32.00.32 5.07
AS4C32M16D2A-25BCN
Alliance Memory Inc
Query price and inventory
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 3 85 °C 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 1689 FBGA-84 compliant Taiwan EAR99 8542.32.00.28 4
MT41K256M16TW-107:P
Micron Technology Inc
Query price and inventory
Yes Active 4.295 Gbit 16 256MX16 1.35 V 195 ps 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM COMMON 8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 8 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 95 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 FBGA-96 not_compliant EAR99 8542.32.00.36 5.15
IS43TR16256BL-107MBLI
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 4.295 Gbit 16 256MX16 1.35 V 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 4,8 1.45 V 1.283 V CMOS INDUSTRIAL R-PBGA-B96 e1 3 95 °C -40 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 9 mm 2070 FBGA-96 compliant Mainland China, Taiwan EAR99 8542.32.00.36 4
IS43R16320E-5TL-TR
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 536.8709 Mbit 16 32MX16 2.5 V 700 ps FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS COMMERCIAL R-PDSO-G66 70 °C NOT SPECIFIED NOT SPECIFIED 66 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
IS42S16160J-7TL
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
MT47H128M8SH-25E:M
Micron Technology Inc
Query price and inventory
Yes Yes Active 1.0737 Gbit 8 128MX8 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 7 mA 210 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 10 mm 8 mm 2190 FBGA-60 compliant Mainland China, Malaysia, Taiwan EAR99 8542.32.00.32 5 BGA 60
IS42S16160J-6BLI
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 e1 85 °C -40 °C 260 54 PLASTIC/EPOXY TFBGA SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
MT47H32M16NF-25E:H
Micron Technology Inc
Query price and inventory
Yes Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps 400 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 4,8 10 mA 215 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 2190 FBGA-84 not_compliant EAR99 8542.32.00.28 4.75 BGA 84
MT46V64M8P-5B:J
Micron Technology Inc
Query price and inventory
Yes Active 536.8709 Mbit 8 64MX8 2.6 V 700 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 64000000 536.8709 M SYNCHRONOUS 3-STATE YES 2,4,8 5 mA 230 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 3 70 °C 260 30 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 TSOP-66 compliant EAR99 8542.32.00.28 4.25 TSOP 66
MT48LC16M16A2B4-6A:G
Micron Technology Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 167 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B54 Not Qualified e1 70 °C 260 30 54 PLASTIC/EPOXY VFBGA BGA54,9X9,32 SQUARE GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1 mm 8 mm 8 mm 2190 8 X 8 MM, LEAD FREE, VFBGA-54 compliant EAR99 8542.32.00.24 4
AS4C4M16SA-6TCN
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT41K128M16JT-125:K
Micron Technology Inc
Query price and inventory
Yes Yes Active 2.1475 Gbit 16 128MX16 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 195 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 Not Qualified e1 95 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 compliant EAR99 8542.32.00.36 5.1 BGA 96
Parts Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
Datasheet Price/Stock
Risk Rank Pbfree Code Rohs Code
Part Life Cycle Code Memory Density Memory Width Organization Supply Voltage-Nom (Vsup)
Access Time-Max Clock Frequency-Max (fCLK) Refresh Cycles
Access Mode Memory IC Type Additional Feature I/O Type Interleaved Burst Length Number of Functions Number of Ports Number of Words Code Number of Words Operating Mode Output Characteristics Self Refresh
Sequential Burst Length
Standby Current-Max
Standby Voltage-Min
Supply Current-Max
Supply Voltage-Max (Vsup)
Supply Voltage-Min (Vsup)
Technology Temperature Grade
JESD-30 Code Qualification Status
JESD-609 Code Moisture Sensitivity Level Operating Temperature-Max Operating Temperature-Min Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s)
Number of Terminals Package Body Material Package Code Package Equivalence Code Package Shape Package Style Surface Mount
Terminal Finish
Terminal Form
Terminal Pitch
Terminal Position
Seated Height-Max
Length Width
mfrid
Package Description
Reach Compliance Code
Country Of Origin
ECCN Code
HTS Code
YTEOL
Part Package Code
Pin Count
AS4C4M16SA-6TIN
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C4M16SA-7TCN
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C16M16SA-7TCN
Alliance Memory Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 143 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 20 mA 3 V 55 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
AS4C8M16SA-7TCN
Alliance Memory Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C16M16SA-7TCNTR
Alliance Memory Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 143 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 20 mA 55 µA 3.6 V 3 V CMOS R-PDSO-G54 3 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
MT47H128M16RT-25E:C
Micron Technology Inc
Query price and inventory
Yes Yes Active 2.1475 Gbit 16 128MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 330 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 12.5 mm 9 mm 2190 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 compliant EAR99 8542.32.00.36 4.75 BGA 84
MT48LC8M16A2P-6A:L
Micron Technology Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 100 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 compliant EAR99 8542.32.00.02 4 TSOP2 54
MT41K64M16TW-107:J
Micron Technology Inc
Query price and inventory
Yes Active 1.0737 Gbit 16 64MX16 1.35 V 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM COMMON 8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 8 28 mA 219 µA 1.45 V 1.283 V CMOS R-PBGA-B96 Not Qualified e1 95 °C NOT SPECIFIED NOT SPECIFIED 96 PLASTIC/EPOXY TFBGA BGA96,6X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 8 X 14 MM, LEAD FREE, FBGA-96 compliant EAR99 8542.32.00.32 5.07
AS4C32M16D2A-25BCN
Alliance Memory Inc
Query price and inventory
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 3 85 °C 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 1689 FBGA-84 compliant Taiwan EAR99 8542.32.00.28 4
MT41K256M16TW-107:P
Micron Technology Inc
Query price and inventory
Yes Active 4.295 Gbit 16 256MX16 1.35 V 195 ps 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM COMMON 8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 8 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 95 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 FBGA-96 not_compliant EAR99 8542.32.00.36 5.15
IS43TR16256BL-107MBLI
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 4.295 Gbit 16 256MX16 1.35 V 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 4,8 1.45 V 1.283 V CMOS INDUSTRIAL R-PBGA-B96 e1 3 95 °C -40 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 9 mm 2070 FBGA-96 compliant Mainland China, Taiwan EAR99 8542.32.00.36 4
IS43R16320E-5TL-TR
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 536.8709 Mbit 16 32MX16 2.5 V 700 ps FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS COMMERCIAL R-PDSO-G66 70 °C NOT SPECIFIED NOT SPECIFIED 66 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
IS42S16160J-7TL
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
MT47H128M8SH-25E:M
Micron Technology Inc
Query price and inventory
Yes Yes Active 1.0737 Gbit 8 128MX8 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 7 mA 210 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 10 mm 8 mm 2190 FBGA-60 compliant Mainland China, Malaysia, Taiwan EAR99 8542.32.00.32 5 BGA 60
IS42S16160J-6BLI
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 e1 85 °C -40 °C 260 54 PLASTIC/EPOXY TFBGA SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
MT47H32M16NF-25E:H
Micron Technology Inc
Query price and inventory
Yes Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps 400 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 4,8 10 mA 215 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 2190 FBGA-84 not_compliant EAR99 8542.32.00.28 4.75 BGA 84
MT46V64M8P-5B:J
Micron Technology Inc
Query price and inventory
Yes Active 536.8709 Mbit 8 64MX8 2.6 V 700 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 64000000 536.8709 M SYNCHRONOUS 3-STATE YES 2,4,8 5 mA 230 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 3 70 °C 260 30 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 TSOP-66 compliant EAR99 8542.32.00.28 4.25 TSOP 66
MT48LC16M16A2B4-6A:G
Micron Technology Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 167 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B54 Not Qualified e1 70 °C 260 30 54 PLASTIC/EPOXY VFBGA BGA54,9X9,32 SQUARE GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1 mm 8 mm 8 mm 2190 8 X 8 MM, LEAD FREE, VFBGA-54 compliant EAR99 8542.32.00.24 4
AS4C4M16SA-6TCN
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT41K128M16JT-125:K
Micron Technology Inc
Query price and inventory
Yes Yes Active 2.1475 Gbit 16 128MX16 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 195 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 Not Qualified e1 95 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 compliant EAR99 8542.32.00.36 5.1 BGA 96
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