Parts | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Datasheet |
Price/Stock
|
Risk Rank | Pbfree Code |
Rohs Code
|
Part Life Cycle Code | Collector-Emitter Voltage-Max | Collector Current-Max (IC) | Polarity/Channel Type |
Surface Mount
|
Configuration | Number of Terminals | Highest Frequency Band | Number of Elements | DC Current Gain-Min (hFE) |
Transition Frequency-Nom (fT)
|
Additional Feature | Collector-Base Capacitance-Max | Power Dissipation-Max (Abs) |
Transistor Application
|
Transistor Element Material
|
JEDEC-95 Code | JESD-30 Code | JESD-609 Code | Qualification Status |
Reference Standard
|
Moisture Sensitivity Level | Operating Temperature-Max | Operating Temperature-Min | Peak Reflow Temperature (Cel) |
Time@Peak Reflow Temperature-Max (s)
|
Case Connection | Package Body Material | Package Shape | Package Style |
Terminal Finish
|
Terminal Form
|
Terminal Position
|
mfrid
|
Package Description
|
Pin Count
|
Reach Compliance Code
|
ECCN Code
|
YTEOL
|
Source Content uid
|
Part Package Code
|
Manufacturer Package Code
|
Country Of Origin
|
HTS Code
|
Date Of Intro
|
||
MMBTH10-7-F
Diodes Incorporated
|
Query price and inventory |
|
Yes | Yes | Active | 25 V | 50 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 60 | 650 MHz | HIGH RELIABILITY | 0.7 pF | 300 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | ROHS COMPLIANT, PLASTIC PACKAGE-3 | 3 | compliant | EAR99 | 4 | ||||||||||||
BFP420H6327XTSA1
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | 4.5 V | 35 mA | NPN | YES | SINGLE | 4 | X BAND | 1 | 25 GHz | HIGH RELIABILITY, LOW NOISE | 0.3 pF | AMPLIFIER | SILICON | R-PDSO-G4 | e3 | AEC-Q101 | 1 | -65 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | 2065 | compliant | EAR99 | 4 | BFP420H6327XTSA1 | ||||||||||||||||||
MMBTH10LT1G
onsemi
|
Query price and inventory |
|
Yes | Yes | Active | 25 V | 25 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 60 | 650 MHz | 0.7 pF | 300 mW | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2260 | CASE 318-08, 3 PIN | 3 | compliant | EAR99 | 4 | MMBTH10LT1G | SOT-23 (TO-236) 3 LEAD | 318 | Mainland China | 8541.21.00.95 | ||||||||
BF771E6327HTSA1
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Yes | Active | 12 V | 80 mA | NPN | YES | SINGLE | 3 | 1 | 8 GHz | 1 pF | AMPLIFIER | SILICON | R-PDSO-G3 | Not Qualified | 1 | 150 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | 2065 | compliant | EAR99 | 4 | BF771E6327HTSA1 | ||||||||||||||||||||
BFS20,215
Nexperia
|
Query price and inventory |
|
Yes | Active | 20 V | 25 mA | NPN | YES | SINGLE | 3 | VERY HIGH FREQUENCY BAND | 1 | 40 | 450 MHz | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | 229119436 | PLASTIC, SST, 3 PIN | 3 | compliant | EAR99 | 4 | BFS20,215 | TO-236 | SOT23 | Mainland China, Malaysia | 1997-09-01 | ||||||||||
BFR193E6327
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Yes | Active | 12 V | 80 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 70 | 8 GHz | 1 pF | 580 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2065 | compliant | EAR99 | 4 | BFR193E6327 | |||||||||||||||
BF824W,135
Nexperia
|
Query price and inventory |
|
Yes | Active | 30 V | 25 mA | PNP | YES | SINGLE | 3 | 1 | 25 | 390 MHz | 0.3 pF | 200 mW | SILICON | R-PDSO-G3 | e3 | Not Qualified | AEC-Q101; IEC-134 | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | 229119436 | SC-70, SOT-323, 3 PIN | 3 | compliant | EAR99 | 4 | BF824W,135 | SC-70 | SOT323 | Malaysia | 1995-02-01 | |||||||||
BF824,215
Nexperia
|
Query price and inventory |
|
Yes | Active | 30 V | 25 mA | PNP | YES | SINGLE | 3 | 1 | 25 | 450 MHz | 0.3 pF | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | 229119436 | PLASTIC, SST, 3 PIN | 3 | compliant | EAR99 | 4 | BF824,215 | TO-236 | SOT23 | Mainland China, Malaysia | 1997-09-01 | ||||||||||
BFP540ESDH6327XTSA1
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | 4.5 V | 80 mA | NPN | YES | SINGLE | 4 | S BAND | 1 | 30 GHz | HIGH RELIABILITY, LOW NOISE | 0.24 pF | AMPLIFIER | SILICON | R-PDSO-G4 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | 2065 | compliant | EAR99 | 4 | BFP540ESDH6327XTSA1 | |||||||||||||||||||
BFU520YX
NXP Semiconductors
|
Query price and inventory |
|
Yes | Active | 12 V | 30 mA | NPN | YES | SEPARATE, 2 ELEMENTS | 6 | L BAND | 2 | 60 | 10 GHz | LOW NOISE | 0.48 pF | 450 mW | AMPLIFIER | SILICON | R-PDSO-G6 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | -40 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | 2245 | SC-88, SOT-363, 6 PIN | 6 | compliant | EAR99 | 4 | BFU520YX | TSSOP | SOT363 | Malaysia | 8541.21.00 | |||||||
BFR193WH6327XTSA1
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | 12 V | 80 mA | NPN | YES | SINGLE | 3 | L BAND | 1 | 8 GHz | LOW NOISE | 1 pF | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | 2065 | ROHS COMPLIANT PACKAGE-3 | compliant | EAR99 | 4 | BFR193WH6327XTSA1 | ||||||||||||||||||
BFR106E6327HTSA1
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Yes | Active | 15 V | 100 mA | NPN | YES | SINGLE | 3 | 1 | 70 | 5 GHz | 1.5 pF | 700 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | 2065 | compliant | EAR99 | 4 | BFR106E6327HTSA1 | |||||||||||||||||
BFR106E6327
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Yes | Active | 15 V | 100 mA | NPN | YES | SINGLE | 3 | 1 | 40 | 5 GHz | 1.5 pF | 700 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2065 | compliant | EAR99 | 4 | BFR106E6327 | |||||||||||||||
2N2222
SPC Multicomp
|
Query price and inventory |
|
Active | 4165152 | METAL CAN-3 | 3 | unknown | EAR99 | 4 | BCY | India | ||||||||||||||||||||||||||||||||||||||||
BFS483H6327XTSA1
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | 12 V | 65 mA | NPN | YES | SEPARATE, 2 ELEMENTS | 6 | L BAND | 2 | 8 GHz | LOW NOISE | 0.54 pF | AMPLIFIER | SILICON | R-PDSO-G6 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | 2065 | ROHS COMPLIANT PACKAGE-6 | compliant | EAR99 | 4 | BFS483H6327XTSA1 | ||||||||||||||||||
MMBT918LT1G
onsemi
|
Query price and inventory |
|
Yes | Yes | Active | 15 V | 50 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 20 | 600 MHz | 3 pF | 300 mW | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2260 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | compliant | EAR99 | 4 | MMBT918LT1G | SOT-23 (TO-236) 3 LEAD | 318 | Mainland China | |||||||||
BFR93AE6327
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Yes | Active | 12 V | 50 mA | NPN | YES | SINGLE | 3 | 1 | 50 | 6 GHz | 0.9 pF | 300 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2065 | compliant | EAR99 | 4 | BFR93AE6327 | Mainland China | ||||||||||||||
HFA3096BZ
Renesas Electronics Corporation
|
Query price and inventory |
|
Yes | Yes | Active | 8 V | 37 mA | NPN AND PNP | YES | SEPARATE, 5 ELEMENTS | 16 | ULTRA HIGH FREQUENCY BAND | 5 | 40 | 8 GHz | LOW NOISE | AMPLIFIER | SILICON | MS-012AC | R-PDSO-G16 | e3 | 3 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2354 | SOIC-16 | 16 | compliant | EAR99 | 4 | HFA3096BZ | SOICN | M16.15 | Mainland China, Philippines | |||||||||||
BFP193E6327
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Yes | Active | 12 V | 80 mA | NPN | YES | SINGLE | 4 | ULTRA HIGH FREQUENCY BAND | 1 | 50 | 8 GHz | 0.9 pF | 580 mW | AMPLIFIER | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | 260 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2065 | compliant | EAR99 | 4 | BFP193E6327 | ||||||||||||||
HFA3096BZ96
Renesas Electronics Corporation
|
Query price and inventory |
|
Yes | Yes | Active | 8 V | 37 mA | NPN AND PNP | YES | SEPARATE, 5 ELEMENTS | 16 | ULTRA HIGH FREQUENCY BAND | 5 | 40 | 8 GHz | LOW NOISE | AMPLIFIER | SILICON | MS-012AC | R-PDSO-G16 | e3 | 3 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2354 | SOIC-16 | 16 | compliant | EAR99 | 4 | HFA3096BZ96 | SOICN | M16.15 |