Parts | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||
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Datasheet |
Price/Stock
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Risk Rank | Pbfree Code |
Rohs Code
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Part Life Cycle Code | Polarity/Channel Type |
Surface Mount
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Configuration | Number of Terminals | DS Breakdown Voltage-Min | Highest Frequency Band | Number of Elements | Power Gain-Min (Gp) | Drain Current-Max (ID) | Drain-source On Resistance-Max | Additional Feature | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | FET Technology | Operating Mode | Power Dissipation-Max (Abs) | Pulsed Drain Current-Max (IDM) |
Transistor Application
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Transistor Element Material
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JEDEC-95 Code | JESD-30 Code | JESD-609 Code | Qualification Status | Moisture Sensitivity Level | Operating Temperature-Max | Operating Temperature-Min | Peak Reflow Temperature (Cel) |
Time@Peak Reflow Temperature-Max (s)
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Case Connection | Package Body Material | Package Shape | Package Style |
Terminal Finish
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Terminal Form
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Terminal Position
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Source Content uid
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mfrid
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Package Description
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Reach Compliance Code
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ECCN Code
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YTEOL
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Part Package Code
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Pin Count
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Date Of Intro
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PTVA123501ECV2R250
Infineon Technologies AG
|
Query price and inventory |
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Yes | Active | N-CHANNEL | YES | SINGLE | 2 | 105 V | L BAND | 1 | 16.5 dB | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | AMPLIFIER | SILICON | R-CDFM-F2 | 225 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLANGE MOUNT | FLAT | DUAL | PTVA123501ECV2R250 | 2065 | , | compliant | EAR99 | 2 | |||||||||||||||||||
PTVA123501FCV1R250
Infineon Technologies AG
|
Query price and inventory |
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Yes | Active | N-CHANNEL | YES | SINGLE | 2 | 105 V | L BAND | 1 | 16.5 dB | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | AMPLIFIER | SILICON | R-CDFP-F2 | 225 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLATPACK | FLAT | DUAL | PTVA123501FCV1R250 | 2065 | , | compliant | EAR99 | 2 | |||||||||||||||||||
7N65L-TQ2-T
Unisonic Technologies Co Ltd
|
Query price and inventory |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 650 V | 1 | 7.4 A | 1.2 Ω | 530 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 142 W | 29.6 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 4317462 | LEAD FREE, TO-263, 3 PIN | compliant | EAR99 | 6.52 | D2PAK | 4 | ||||||||||||||
7N65L-TQ2-R
Unisonic Technologies Co Ltd
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 650 V | 1 | 7.4 A | 1.2 Ω | 530 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 142 W | 29.6 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 4317462 | LEAD FREE, TO-263, 3 PIN | compliant | EAR99 | 6.52 | D2PAK | 4 | ||||||||||||||
7N65G-TM3-T
Unisonic Technologies Co Ltd
|
Query price and inventory |
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Active | 4317462 | compliant | EAR99 | 2020-02-18 | ||||||||||||||||||||||||||||||||||||||||||||
PTFB212503FLV2R250
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 4 | 65 V | S BAND | 1 | 17 dB | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | AMPLIFIER | SILICON | R-CQFP-X4 | e4 | 200 °C | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLATPACK | GOLD | UNSPECIFIED | QUAD | PTFB212503FLV2R250 | 2065 | GREEN, H-34288-4/2, 4 PIN | compliant | EAR99 | 6.42 | 4 | |||||||||||||||||
9N90G-TA3-T
Unisonic Technologies Co Ltd
|
Query price and inventory |
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Active | 4317462 | compliant | EAR99 | 2020-02-18 | ||||||||||||||||||||||||||||||||||||||||||||
7N65G-TQ2-R
Unisonic Technologies Co Ltd
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 650 V | 1 | 7.4 A | 1.2 Ω | 530 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 142 W | 29.6 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 4317462 | HALOGEN FREE, TO-263, 3 PIN | compliant | EAR99 | 6.52 | D2PAK | 4 | ||||||||||||||
7N65L-TN3-R
Unisonic Technologies Co Ltd
|
Query price and inventory |
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Active | 4317462 | compliant | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||
9N90L-TA3-T
Unisonic Technologies Co Ltd
|
Query price and inventory |
|
Active | 4317462 | compliant | EAR99 | 2020-02-18 | ||||||||||||||||||||||||||||||||||||||||||||
7N65L-TM3-T
Unisonic Technologies Co Ltd
|
Query price and inventory |
|
Active | 4317462 | compliant | EAR99 | 2020-02-18 | ||||||||||||||||||||||||||||||||||||||||||||
7N65G-TQ2-T
Unisonic Technologies Co Ltd
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 650 V | 1 | 7.4 A | 1.2 Ω | 530 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 142 W | 29.6 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 4317462 | HALOGEN FREE, TO-263, 3 PIN | compliant | EAR99 | 6.52 | D2PAK | 4 | ||||||||||||||
VRF151MPG
Microchip Technology Inc
|
Query price and inventory |
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Active | 2188 | compliant | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||
PTFB211503FLV2R250
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 4 | 65 V | S BAND | 1 | 16.5 dB | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | AMPLIFIER | SILICON | R-CQFP-X4 | 200 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLATPACK | UNSPECIFIED | QUAD | PTFB211503FLV2R250 | 2065 | GREEN, CERAMIC, H-34288-4/2, 4 PIN | compliant | EAR99 | 6.42 | 4 | |||||||||||||||||
VRF150MPG
Microchip Technology Inc
|
Query price and inventory |
|
Active | 2188 | compliant | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||
15N10G-TA3-T
Unisonic Technologies Co Ltd
|
Query price and inventory |
|
Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 14.7 A | 110 mΩ | 65 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 30 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | 4317462 | compliant | EAR99 | 5.05 | 2020-02-18 | |||||||||||||||||||
15N10L-TA3-T
Unisonic Technologies Co Ltd
|
Query price and inventory |
|
Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 14.7 A | 110 mΩ | 65 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 30 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | 4317462 | compliant | EAR99 | 5.05 | 2020-02-18 | |||||||||||||||||||
PTAC260302FCV1R0
Infineon Technologies AG
|
Query price and inventory |
|
Active | N-CHANNEL | YES | COMMON SOURCE, 2 ELEMENTS | 4 | 65 V | S BAND | 2 | 14.5 dB | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | AMPLIFIER | SILICON | R-CDFP-F4 | 225 °C | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLATPACK | FLAT | DUAL | PTAC260302FCV1R0 | 2065 | compliant | EAR99 | 6.42 | 2016-06-29 | ||||||||||||||||||||||
PD57018TR-E
STMicroelectronics
|
Query price and inventory |
|
Yes | Active | N-CHANNEL | YES | SINGLE | 2 | 65 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 A | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 31.7 W | AMPLIFIER | SILICON | R-PDSO-G2 | e3 | Not Qualified | 3 | 165 °C | 250 | 30 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | PD57018TR-E | 2443 | ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN | not_compliant | EAR99 | 6.7 | SOT | 10 | |||||||||||
PTVA030121EAV1R250
Infineon Technologies AG
|
Query price and inventory |
|
Yes | Active | NOT SPECIFIED | NOT SPECIFIED | PTVA030121EAV1R250 | 2065 | , | compliant | EAR99 | 7 |