型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 集电极-发射极最大电压 | 最大集电极电流 (IC) | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 最高频带 | 元件数量 | 最小直流电流增益 (hFE) | 最大漏极电流 (ID) | 最大漏源导通电阻 |
标称过渡频率 (fT)
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雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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VCEsat-Max
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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零件包装代码
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包装说明
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针数
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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HTS代码
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YTEOL
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Date Of Intro
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MJD122G
onsemi
|
查询价格和库存 |
|
Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 20 W | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | MJD122G | 2260 | DPAK (SINGLE GAUGE) TO-252 | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | 3 | 369C | not_compliant | Mainland China | EAR99 | 8541.29.00.95 | 4 | |||||||||||||||||||
NVMFS5C426NLT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 237 A | 1.8 mΩ | 453 mJ | 70 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 W | 1.48 kA | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C426NLT1G | 2260 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | 5.6 | ||||||||||||||||||
NVMFS5C670NLWFAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 60 V | 1 | 71 A | 8.8 mΩ | 166 mJ | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 61 W | 440 A | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C670NLWFAFT1G | 2260 | SO-8FL, DFN5, 6 PIN | 507BE | not_compliant | Malaysia | EAR99 | 5.6 | 2017-02-24 | |||||||||||||||||
MJD32CT4G
onsemi
|
查询价格和库存 |
|
Yes | Active | 100 V | 3 A | PNP | YES | SINGLE | 2 | 1 | 10 | 3 MHz | 15 W | AMPLIFIER | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | MJD32CT4G | 2260 | DPAK (SINGLE GAUGE) TO-252 | DPAK-3 | 3 | 369C | not_compliant | Mainland China | EAR99 | 8541.29.00.95 | 4 | |||||||||||||||||||
BD237G
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 2 A | NPN | NO | SINGLE | 3 | 1 | 25 | 3 MHz | 25 W | AMPLIFIER | SILICON | TO-225AA | R-PSFM-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | BD237G | 2260 | TO-225 | ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN | 3 | 77-09 | compliant | Mainland China | EAR99 | 8541.29.00.95 | 4 | ||||||||||||||||||||||
SMMBT5551LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 160 V | 600 mA | NPN | YES | SINGLE | 3 | 1 | 30 | 300 mW | SWITCHING | SILICON | 200 mV | TO-236 | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | SMMBT5551LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 | 1999-01-01 | |||||||||||||||||||
NJVMJD122T4G
onsemi
|
查询价格和库存 |
|
Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 20 W | AMPLIFIER | SILICON | R-PSSO-G2 | e3 | AEC-Q101 | 1 | 150 °C | -65 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | NJVMJD122T4G | 2260 | DPAK (SINGLE GAUGE) TO-252 | DPAK-3/2 | 3 | 369C | not_compliant | Malaysia | EAR99 | 4 | |||||||||||||||||||
MMBT5551LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 160 V | 60 mA | NPN | YES | SINGLE | 3 | 1 | 30 | 300 mW | SWITCHING | SILICON | 200 mV | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBT5551LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | TO-236, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 8541.21.00.95 | 7 | 1999-01-01 | |||||||||||||||||
KSD1691GS
onsemi
|
查询价格和库存 |
|
Yes | Active | 60 V | 5 A | NPN | NO | SINGLE | 3 | 1 | 200 | 20 W | SILICON | TO-126 | R-PSFM-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | KSD1691GS | 2260 | LEAD FREE, TO-126, 3 PIN | 340AS | not_compliant | Mainland China | EAR99 | 4 | |||||||||||||||||||||||||||
2N4403TA
onsemi
|
查询价格和库存 |
|
Yes | Active | 40 V | 600 mA | PNP | NO | SINGLE | 3 | 1 | 100 | 200 MHz | 350 mW | SWITCHING | SILICON | 255 ns | 35 ns | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | 2N4403TA | 2260 | PACKAGE-3 | 135AR | compliant | Mainland China | EAR99 | 6.5 | |||||||||||||||||||||||
NVMFS5C604NLWFAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 287 A | 1.7 mΩ | 776 mJ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C604NLWFAFT1G | 2260 | SO-8FL, DFN5, 6 PIN | 507BE | not_compliant | Malaysia | EAR99 | 5.6 | 2017-02-24 | |||||||||||||||||
BC856BLT3G
onsemi
|
查询价格和库存 |
|
Yes | Active | 65 V | 100 mA | PNP | YES | SINGLE | 3 | 1 | 220 | 100 MHz | 225 mW | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BC856BLT3G | 2260 | SOT-23 (TO-236) 3 LEAD | CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 | ||||||||||||||||||||
J112-D74Z
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE | 3 | 1 | 50 Ω | 5 pF | JUNCTION | DEPLETION MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | J112-D74Z | 2260 | 135AR | compliant | Mainland China | EAR99 | 6.05 | ||||||||||||||||||||||||||
2N4403TAR
onsemi
|
查询价格和库存 |
|
Yes | Active | 40 V | 600 mA | PNP | NO | SINGLE | 3 | 1 | 100 | 200 MHz | 350 mW | SWITCHING | SILICON | 255 ns | 35 ns | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | 2N4403TAR | 2260 | PACKAGE-3 | 135AR | compliant | Mainland China | EAR99 | 6.5 | |||||||||||||||||||||||
J211-D74Z
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE | 3 | VERY HIGH FREQUENCY BAND | 1 | JUNCTION | DEPLETION MODE | 350 mW | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | J211-D74Z | 2260 | TO-92 3L | 135AR | compliant | Mainland China | EAR99 | 6.35 | ||||||||||||||||||||||||||
BC856BLT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 65 V | 100 mA | PNP | YES | SINGLE | 3 | 1 | 220 | 100 MHz | 300 mW | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BC856BLT1G | 2260 | SOT-23 (TO-236) 3 LEAD | CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 | ||||||||||||||||||||
KSD1691YSTU
onsemi
|
查询价格和库存 |
|
Yes | Active | 60 V | 5 A | NPN | NO | SINGLE | 3 | 1 | 160 | 20 W | SILICON | TO-126 | R-PSFM-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | KSD1691YSTU | 2260 | LEAD FREE, TO-126, 3 PIN | 340AS | not_compliant | Mainland China | EAR99 | 4 | |||||||||||||||||||||||||||
MMBTA56LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 500 mA | PNP | YES | SINGLE | 3 | 1 | 100 | 50 MHz | 300 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBTA56LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 | |||||||||||||||||||
BSS138-13-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | |||||||||||||||||||||||||
MMBT3904-TP
Micro Commercial Components
|
查询价格和库存 |
|
Yes | Yes | Active | 40 V | 200 mA | NPN | YES | SINGLE | 3 | 1 | 100 | 300 MHz | 350 mW | AMPLIFIER | SILICON | 250 ns | 70 ns | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2185 | ROHS COMPLIANT, PLASTIC PACKAGE-3 | 3 | compliant | Mainland China | EAR99 | 7 |