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Memory > DRAMs

H5PS1G83KFR-S5I

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H5PS1G83KFR-S5I
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SKHynix 海力士

DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, FBGA-60

Market Average:
-
Total Inventory:
-
Lifecycle Status: Obsolete
9.6DanRisk Rank:DesignProductionLong Term
Technical Details

Parametrics

Rohs Code
符合
Part Life Cycle Code
Obsolete
Package Description
TFBGA,
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.32
Popularity
16
Risk Rank
9.6
YTEOL
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Access Mode
MULTI BANK PAGE BURST
Access Time-Max
0.4 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B60
Length
9.5 mm
Memory Density
1073741824 bit
Memory IC Type
DDR DRAM
Memory Width
8
Number of Functions
1
Number of Ports
1
Number of Terminals
60
Number of Words
134217728 words
Number of Words Code
128000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
128MX8
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
260
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
20
Width
7.5 mm
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