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Transistors > Power Field-Effect Transistors

BSC034N03LSGATMA1

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BSC034N03LSGATMA1
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Infineon

Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Market Average:
¥3.9888
Total Inventory:
59,848
Lifecycle Status: Not Recommended
8.2DanRisk Rank:DesignProductionLong Term
Technical Details
Price & Stock

Parametrics

Source Content uid
BSC034N03LSGATMA1
Pbfree Code
含铅
Rohs Code
符合
Part Life Cycle Code
Not Recommended
Package Description
GREEN, PLASTIC, TDSON-8
Pin Count
8
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Popularity
194
Risk Rank
8.2
YTEOL
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Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas)
55 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
22 A
Drain-source On Resistance-Max
0.0051 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-N8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
400 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
NO LEAD
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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