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Power Field-Effect Transistor, 173A I(D), 750V, 0.0106ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, HDSOP-22

Technical Details

Parametrics

Rohs Code

符合

Part Life Cycle Code

Active

Package Description

HDSOP-22

Reach Compliance Code

compliant

Popularity

Avalanche Energy Rating (Eas)

926 mJ

Case Connection

DRAIN

Configuration

DS Breakdown Voltage-Min

750 V

Drain Current-Max (ID)

173 A

Drain-source On Resistance-Max

0.0106 Ω

FET Technology

Feedback Cap-Max (Crss)

37 pF

JESD-30 Code

R-PDSO-G22

Number of Elements

Number of Terminals

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

625 W

Pulsed Drain Current-Max (IDM)

708 A

Reference Standard

AEC-Q101

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

DUAL

Transistor Application

SWITCHING

Transistor Element Material

SILICON CARBIDE

ICP Business License 苏B2-20140176 苏ICP备14012660号-4
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AIMDQ75R008M1H

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