Parts | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Datasheet |
Price/Stock
|
Risk Rank | Pbfree Code |
Rohs Code
|
Part Life Cycle Code | Memory Density | Memory Width |
Sector Size
|
Organization |
Supply Voltage-Nom (Vsup)
|
Access Time-Max | Clock Frequency-Max (fCLK) |
Refresh Cycles
|
Access Mode | Memory IC Type | Additional Feature | Alternate Memory Width | Boot Block | Command User Interface | Common Flash Interface | Data Polling | Data Retention Time-Min | Endurance | I/O Type | I2C Control Byte | Interleaved Burst Length | Mixed Memory Type | Number of Functions | Number of Ports | Number of Sectors/Size | Number of Words Code | Number of Words | Operating Mode | Output Characteristics | Parallel/Serial |
Programming Voltage
|
Ready/Busy
|
Reverse Pinout
|
Self Refresh
|
Sequential Burst Length
|
Serial Bus Type
|
Standby Current-Max
|
Supply Current-Max
|
Supply Voltage-Max (Vsup)
|
Supply Voltage-Min (Vsup)
|
Technology |
Temperature Grade
|
Toggle Bit
|
Type
|
Write Cycle Time-Max (tWC)
|
Write Protection
|
JESD-30 Code |
Qualification Status
|
JESD-609 Code | Moisture Sensitivity Level | Operating Temperature-Max | Operating Temperature-Min | Peak Reflow Temperature (Cel) |
Screening Level
|
Time@Peak Reflow Temperature-Max (s)
|
Number of Terminals | Package Body Material | Package Code | Package Equivalence Code | Package Shape | Package Style |
Surface Mount
|
Terminal Finish
|
Terminal Form
|
Terminal Pitch
|
Terminal Position
|
Seated Height-Max
|
Length |
Width
|
mfrid
|
Package Description
|
Reach Compliance Code
|
Country Of Origin
|
ECCN Code
|
HTS Code
|
YTEOL
|
Source Content uid
|
Part Package Code
|
Pin Count
|
Date Of Intro
|
Manufacturer Package Code
|
||
AS4C8M16SA-7TCN
Alliance Memory Inc
|
Query price and inventory |
|
Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 | ||||||||||||||||||||||||||||||||||||||||||
SST39VF1601C-70-4I-EKE
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 16.7772 Mbit | 16 | 8K,4K,16K,32K | 1MX16 | 3 V | 70 ns | FLASH | BOTTOM BOOT BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 1,2,1,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | YES | 20 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G48 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 48 | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | 2188 | TSOP-48 | compliant | South Korea, Taiwan | EAR99 | 8542.32.00.51 | 10 | SST39VF1601C-70-4I-EKE | TSOP1 | 48 | ||||||||||||||||||
24LC16B-E/P
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 3 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 5 µA | 3 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 2188 | DIP-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | 24LC16B-E/P | DIP | 8 | ||||||||||||||||||||||||||||
MX29LV800CBTI-70G
Macronix International Co Ltd
|
Query price and inventory |
|
Yes | Yes | Active | 8.3886 Mbit | 16 | 16K,8K,32K,64K | 512KX16 | 3 V | 70 ns | FLASH | 8 | BOTTOM | YES | YES | YES | 1 | 1,2,1,15 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin (Sn) | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | 4307504 | 8 X 6 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, MO-120, TFBGA-48 | compliant | Taiwan | 3A991.B.1.A | 8542.32.00.51 | 5 | TSOP | 48 | ||||||||||||||||||||||||
93LC46C-I/SN
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2188 | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | 93LC46C-I/SN | SOIC | 8 | |||||||||||||||||||||||
24LC16B-I/P
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 3 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 1 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 2188 | DIP-8 | compliant | Thailand | 9 | 24LC16B-I/P | DIP | 8 | ||||||||||||||||||||||||||||||
24LC16B/P
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 100 µA | 3 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | 10 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.32 mm | 9.46 mm | 7.62 mm | 2188 | 0.300 INCH, PLASTIC, DIP-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 5.9 | 24LC16B/P | DIP | 8 | |||||||||||||||||||||||||||||
24LC01B/SN
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 1.024 kbit | 8 | 128X8 | 5 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010XXXR | 1 | 1 | 128 | 128 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 100 µA | 3 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | 10 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2188 | 0.150 INCH, PLASTIC, SOIC-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | 24LC01B/SN | SOIC | 8 | ||||||||||||||||||||||||||
24LC00T-I/SN
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 128 bit | 8 | 16X8 | 5 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010XXXR | 1 | 1 | 16 | 16 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 4 ms | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2188 | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | compliant | Taiwan, Thailand | EAR99 | 8542.32.00.51 | 9 | 24LC00T-I/SN | SOIC | 8 | |||||||||||||||||||||||||
47L16-I/P
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Active | 16.384 kbit | 8 | 2KX8 | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDIP-T8 | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Matte Tin (Sn) | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 2188 | DIP-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 19.96 | 47L16-I/P | 2016-10-10 | ||||||||||||||||||||||||||||||||||||||||||
MT47H128M16RT-25E:C
Micron Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 12 mA | 330 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | Not Qualified | e1 | 85 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 9 mm | 2190 | 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | compliant | EAR99 | 8542.32.00.36 | 4.75 | BGA | 84 | |||||||||||||||||||||||||||||
93C46B-I/P
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 3 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | TS 16949 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Matte Tin (Sn) | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.27 mm | 7.62 mm | 2188 | 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | 93C46B-I/P | DIP | 8 | ||||||||||||||||||||||||||
93LC66B-I/SN
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 4.096 kbit | 16 | 256X16 | 2.5 V | 1 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2188 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | 93LC66B-I/SN | SOIC | 8 | |||||||||||||||||||||||
93LC66BT-I/SN
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 4.096 kbit | 16 | 256X16 | 2.5 V | 1 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2188 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | 93LC66BT-I/SN | SOIC | 8 | |||||||||||||||||||||||
M24128-BRMN6P
STMicroelectronics
|
Query price and inventory |
|
Yes | Active | 131.072 kbit | 8 | 16KX8 | 2.5 V | 400 kHz | EEPROM | 200 | 4000000 Write/Erase Cycles | 1010DDDR | 1 | 16000 | 16.384 k | SYNCHRONOUS | SERIAL | I2C | 1 µA | 2.5 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2443 | SOP-8 | compliant | 2 | M24128-BRMN6P | SOIC | 8 | |||||||||||||||||||||||||||||||||||
AS4C16M16SA-7TCNTR
Alliance Memory Inc
|
Query price and inventory |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 20 mA | 55 µA | 3.6 V | 3 V | CMOS | R-PDSO-G54 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.24 | 4 | |||||||||||||||||||||||||||||||||||||
CAT25040VI-GT3
onsemi
|
Query price and inventory |
|
Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 5 V | 20 MHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1 | 512 | 512 words | SYNCHRONOUS | SERIAL | SPI | 2 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2260 | MS-012, SOIC-8 | compliant | Philippines | EAR99 | 8542.32.00.51 | 5.9 | CAT25040VI-GT3 | SOIC 8, 150 mils | 8 | 751BD | ||||||||||||||||||||||||||||
MT48LC8M16A2P-6A:L
Micron Technology Inc
|
Query price and inventory |
|
Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 167 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2.5 mA | 100 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2190 | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | 4 | TSOP2 | 54 | ||||||||||||||||||||||||||||||
24C65T/SM
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 5 µA | 3 µA | 6 V | 4.5 V | CMOS | COMMERCIAL | 5 ms | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | GULL WING | 1.27 mm | DUAL | 2.03 mm | 5.28 mm | 5.25 mm | 2188 | 0.207 INCH, EIAJ, PLASTIC, SOIC-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 6.2 | 24C65T/SM | SOIC | 8 | ||||||||||||||||||||||||||
AT24C128C-SSHM-T
Microchip Technology Inc
|
Query price and inventory |
|
Yes | Yes | Active | 131.072 kbit | 8 | 16KX8 | 3 V | 1 MHz | EEPROM | 1.7V TO 5.5V @ 0.4MHz | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 1 | 16000 | 16.384 k | SYNCHRONOUS | SERIAL | 3 V | I2C | 6 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.925 mm | 3.9 mm | 2188 | compliant | Thailand | 15 | AT24C128C-SSHM-T |