DRAM封装型号_DRAM厂家价格-bom2buy

型号

型号						Most Relevant								Technical																				Compliance			Operating Conditions						Physical											Dimensions			Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	最长访问时间	最大时钟频率 (fCLK)	刷新周期	访问模式	内存集成电路类型	其他特性	I/O 类型	交错的突发长度	功能数量	端口数量	字数代码	字数	工作模式	输出特性	反向引出线	自我刷新	连续突发长度	最大待机电流	最小待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	筛选级别	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	mfrid	是否符合REACH标准	COO	ECCN代码	HTS代码	YTEOL	包装说明	零件包装代码	针数	Date Of Intro
AS4C32M16SB-7TCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS			YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	compliant	Taiwan	EAR99	8542.32.00.28	4
IS42VM16160K-75BLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	1.8 V	6 ns	133 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE		YES	1,2,4,8,FP	10 µA		100 µA	1.95 V	1.7 V	CMOS	INDUSTRIAL	S-PBGA-B54	Not Qualified			85 °C	-40 °C				54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.24	4	FBGA-54
AS4C64M32MD2A-25BIN Alliance Memory Inc		查询价格和库存			Yes	Active	2.1475 Gbit	32	64MX32	1.2 V				MULTI BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY			1	1	64000000	67.1089 M	SYNCHRONOUS			YES					1.3 V	1.14 V	CMOS	INDUSTRIAL	R-PBGA-B134			3	85 °C	-40 °C				134	PLASTIC/EPOXY	VFBGA		RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	YES		BALL	650 µm	BOTTOM	1 mm	11.5 mm	10 mm	1689	compliant	Taiwan	EAR99	8542.32.00.36	4	FBGA-134
AS4C32M16SB-7TINTR Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE		YES	1,2,4,8,FP	60 mA		150 µA	3.6 V	3 V	CMOS		R-PDSO-G54		e3	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TSOP2	TSSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	compliant	Taiwan	EAR99	8542.32.00.28	4	TSOP2-54
IS42S16100H-7BLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	16.7772 Mbit	16	1MX16	3.3 V	5.5 ns	143 MHz	2048	DUAL BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	1000000	1.0486 M	SYNCHRONOUS	3-STATE		YES	1,2,4,8,FP	3.5 mA		70 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PBGA-B60	Not Qualified			85 °C	-40 °C				60	PLASTIC/EPOXY	TFBGA	BGA60,7X15,25	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	650 µm	BOTTOM	1.2 mm	10.1 mm	6.4 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.02	4	TFBGA-60
AS4C16M16D1A-5TIN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	268.4355 Mbit	16	16MX16	2.5 V	700 ps	200 MHz	8192	FOUR BANK PAGE BURST	DDR1 DRAM	AUTO/SELF REFRESH	COMMON	2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE		YES	2,4,8	5 mA	2.3 V	140 µA	2.7 V	2.3 V	CMOS	INDUSTRIAL	R-PDSO-G66			3	85 °C	-40 °C				66	PLASTIC/EPOXY	TSOP2	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	compliant	Taiwan	EAR99	8542.32.00.24	4	TSOPII-66
MTA8ATF1G64HZ-3G2R1 Micron Technology Inc		查询价格和库存			Yes	Active									DDR4 DRAM MODULE																																											2190	compliant				0
AS4C64M16D2A-25BIN Alliance Memory Inc		查询价格和库存			Yes	Active	1.0737 Gbit	16	64MX16	1.8 V				MULTI BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	64000000	67.1089 M	SYNCHRONOUS			YES					1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84		e1	3	85 °C		265		20	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	1689	compliant	Taiwan	EAR99	8542.32.00.32	4	FBGA-84
MTA4ATF51264HZ-3G2R1 Micron Technology Inc		查询价格和库存			Yes	Active	34.3597 Gbit	64	512MX64	1.2 V		1.6 GHz	8192	MULTI BANK PAGE BURST	DDR4 DRAM MODULE	WD-MAX	COMMON	8	1	1	512000000	536.8709 M	SYNCHRONOUS	3-STATE		YES	8	96 mA		900 µA	1.26 V	1.14 V	CMOS		R-PDMA-N260				95 °C					260	PLASTIC/EPOXY	DIMM	DIMM260,20	RECTANGULAR	MICROELECTRONIC ASSEMBLY	NO		NO LEAD	500 µm	DUAL	30.13 mm	69.6 mm	2.5 mm	2190	compliant				5	SODIMM-260
IS43TR16128DL-107MBL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	2.1475 Gbit	16	128MX16	1.35 V	20 ns	934.58 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	NO	YES	4,8	16 mA	1.283 V	216 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96		e1	3	95 °C		260		10	96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	13 mm	9 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.36	5.1	BGA-96
MT41K256M16TW-093:P Micron Technology Inc		查询价格和库存		Yes	Yes	Active	4.295 Gbit	16	256MX16	1.35 V				MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY			1	1	256000000	268.4355 M	SYNCHRONOUS			YES					1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96		e1		95 °C		260		30	96	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190	compliant		EAR99	8542.32.00.36	5.15	FBGA-96
MT47H256M8EB-25E:C Micron Technology Inc		查询价格和库存		Yes	Yes	Active	2.1475 Gbit	8	256MX8	1.8 V	400 ps	400 MHz	8192	MULTI BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	256000000	268.4355 M	SYNCHRONOUS	3-STATE		YES	4,8	12 mA		250 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B60	Not Qualified	e1		85 °C		260		30	60	PLASTIC/EPOXY	TFBGA	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	11.5 mm	9 mm	2190	compliant		EAR99	8542.32.00.36	4.75	9 X 11.50 MM, ROHS COMPLIANT, FBGA-60	BGA	60
IS41LV16105D-50TLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	16.7772 Mbit	16	1MX16	3.3 V	25 ns			FAST PAGE	FAST PAGE DRAM	AUTO REFRESH; RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			1	1	1000000	1.0486 M	ASYNCHRONOUS								3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G44				85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	44	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	20.95 mm	10.16 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.02	4	TSOP2-50/44			2016-03-31
MT40A2G16TBB-062E:F Micron Technology Inc		查询价格和库存			Yes	Active	34.3597 Gbit	16	2GX16	1.2 V		1.6 GHz	8192	SINGLE BANK PAGE BURST	DDR4 DRAM		COMMON		1	1	2000000000	2.1475 G	SYNCHRONOUS			YES		76 mA		400 µA	1.26 V	1.14 V	CMOS		R-PBGA-B96				95 °C		260		30	96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	7.5 mm	2190	compliant				5	FBGA-96
AS4C64M16D2A-25BCN Alliance Memory Inc		查询价格和库存			Yes	Active	1.0737 Gbit	16	64MX16	1.8 V				MULTI BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	64000000	67.1089 M	SYNCHRONOUS			YES					1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84		e1	3	85 °C	-40 °C	265		20	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	1689	compliant	Taiwan	EAR99	8542.32.00.32	4	FBGA-84
IS43QR16256B-083RBLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	4.295 Gbit	16	256MX16	1.2 V		1.2005 GHz	8192	DUAL BANK PAGE BURST	DDR4 DRAM	AUTO/SELF REFRESH	COMMON	8	1	1	256000000	268.4355 M	SYNCHRONOUS	3-STATE		YES	8	58 mA	1.14 V	375 µA	1.26 V	1.14 V	CMOS	INDUSTRIAL	R-PBGA-B96				95 °C	-40 °C				96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13.5 mm	7.5 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.36	5.1	FBGA-96
MTA9ASF1G72PZ-3G2R1 Micron Technology Inc		查询价格和库存			Yes	Active									DDR4 DRAM MODULE																																											2190	compliant				0
AS4C8M32SA-6BIN Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	32	8MX32	3.3 V	5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS			YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PBGA-B90			3	85 °C	-40 °C				90	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	1689	compliant	Taiwan	EAR99	8542.32.00.24	4	FBGA-90			2016-11-16
IS45S16160J-6BLA1-TR Integrated Silicon Solution Inc		查询价格和库存		Yes	Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	166 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE		YES	1,2,4,8,FP	4 mA		100 µA	3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54				85 °C	-40 °C	NOT SPECIFIED	AEC-Q100	NOT SPECIFIED	54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.24	4	BGA-54
AS4C32M16D1A-5TCN Alliance Memory Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	2.5 V				FOUR BANK PAGE BURST	DDR1 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS			YES					2.7 V	2.3 V	CMOS	COMMERCIAL	R-PDSO-G66			3	70 °C					66	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	compliant	Taiwan	EAR99	8542.32.00.28	4	0.65 MM PITCH, HALOGEN AND LEAD FREE, TSOP2-66

型号						Most Relevant								Technical																				Compliance			Operating Conditions						Physical											Dimensions			Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	最长访问时间	最大时钟频率 (fCLK)	刷新周期	访问模式	内存集成电路类型	其他特性	I/O 类型	交错的突发长度	功能数量	端口数量	字数代码	字数	工作模式	输出特性	反向引出线	自我刷新	连续突发长度	最大待机电流	最小待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	筛选级别	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	mfrid	是否符合REACH标准	COO	ECCN代码	HTS代码	YTEOL	包装说明	零件包装代码	针数	Date Of Intro
AS4C32M16SB-7TCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS			YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	compliant	Taiwan	EAR99	8542.32.00.28	4
IS42VM16160K-75BLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	1.8 V	6 ns	133 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE		YES	1,2,4,8,FP	10 µA		100 µA	1.95 V	1.7 V	CMOS	INDUSTRIAL	S-PBGA-B54	Not Qualified			85 °C	-40 °C				54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.24	4	FBGA-54
AS4C64M32MD2A-25BIN Alliance Memory Inc		查询价格和库存			Yes	Active	2.1475 Gbit	32	64MX32	1.2 V				MULTI BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY			1	1	64000000	67.1089 M	SYNCHRONOUS			YES					1.3 V	1.14 V	CMOS	INDUSTRIAL	R-PBGA-B134			3	85 °C	-40 °C				134	PLASTIC/EPOXY	VFBGA		RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	YES		BALL	650 µm	BOTTOM	1 mm	11.5 mm	10 mm	1689	compliant	Taiwan	EAR99	8542.32.00.36	4	FBGA-134
AS4C32M16SB-7TINTR Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE		YES	1,2,4,8,FP	60 mA		150 µA	3.6 V	3 V	CMOS		R-PDSO-G54		e3	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TSOP2	TSSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	compliant	Taiwan	EAR99	8542.32.00.28	4	TSOP2-54
IS42S16100H-7BLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	16.7772 Mbit	16	1MX16	3.3 V	5.5 ns	143 MHz	2048	DUAL BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	1000000	1.0486 M	SYNCHRONOUS	3-STATE		YES	1,2,4,8,FP	3.5 mA		70 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PBGA-B60	Not Qualified			85 °C	-40 °C				60	PLASTIC/EPOXY	TFBGA	BGA60,7X15,25	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	650 µm	BOTTOM	1.2 mm	10.1 mm	6.4 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.02	4	TFBGA-60
AS4C16M16D1A-5TIN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	268.4355 Mbit	16	16MX16	2.5 V	700 ps	200 MHz	8192	FOUR BANK PAGE BURST	DDR1 DRAM	AUTO/SELF REFRESH	COMMON	2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE		YES	2,4,8	5 mA	2.3 V	140 µA	2.7 V	2.3 V	CMOS	INDUSTRIAL	R-PDSO-G66			3	85 °C	-40 °C				66	PLASTIC/EPOXY	TSOP2	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	compliant	Taiwan	EAR99	8542.32.00.24	4	TSOPII-66
MTA8ATF1G64HZ-3G2R1 Micron Technology Inc		查询价格和库存			Yes	Active									DDR4 DRAM MODULE																																											2190	compliant				0
AS4C64M16D2A-25BIN Alliance Memory Inc		查询价格和库存			Yes	Active	1.0737 Gbit	16	64MX16	1.8 V				MULTI BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	64000000	67.1089 M	SYNCHRONOUS			YES					1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84		e1	3	85 °C		265		20	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	1689	compliant	Taiwan	EAR99	8542.32.00.32	4	FBGA-84
MTA4ATF51264HZ-3G2R1 Micron Technology Inc		查询价格和库存			Yes	Active	34.3597 Gbit	64	512MX64	1.2 V		1.6 GHz	8192	MULTI BANK PAGE BURST	DDR4 DRAM MODULE	WD-MAX	COMMON	8	1	1	512000000	536.8709 M	SYNCHRONOUS	3-STATE		YES	8	96 mA		900 µA	1.26 V	1.14 V	CMOS		R-PDMA-N260				95 °C					260	PLASTIC/EPOXY	DIMM	DIMM260,20	RECTANGULAR	MICROELECTRONIC ASSEMBLY	NO		NO LEAD	500 µm	DUAL	30.13 mm	69.6 mm	2.5 mm	2190	compliant				5	SODIMM-260
IS43TR16128DL-107MBL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	2.1475 Gbit	16	128MX16	1.35 V	20 ns	934.58 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	NO	YES	4,8	16 mA	1.283 V	216 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96		e1	3	95 °C		260		10	96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	13 mm	9 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.36	5.1	BGA-96
MT41K256M16TW-093:P Micron Technology Inc		查询价格和库存		Yes	Yes	Active	4.295 Gbit	16	256MX16	1.35 V				MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY			1	1	256000000	268.4355 M	SYNCHRONOUS			YES					1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96		e1		95 °C		260		30	96	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190	compliant		EAR99	8542.32.00.36	5.15	FBGA-96
MT47H256M8EB-25E:C Micron Technology Inc		查询价格和库存		Yes	Yes	Active	2.1475 Gbit	8	256MX8	1.8 V	400 ps	400 MHz	8192	MULTI BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	256000000	268.4355 M	SYNCHRONOUS	3-STATE		YES	4,8	12 mA		250 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B60	Not Qualified	e1		85 °C		260		30	60	PLASTIC/EPOXY	TFBGA	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	11.5 mm	9 mm	2190	compliant		EAR99	8542.32.00.36	4.75	9 X 11.50 MM, ROHS COMPLIANT, FBGA-60	BGA	60
IS41LV16105D-50TLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	16.7772 Mbit	16	1MX16	3.3 V	25 ns			FAST PAGE	FAST PAGE DRAM	AUTO REFRESH; RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			1	1	1000000	1.0486 M	ASYNCHRONOUS								3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G44				85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	44	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	20.95 mm	10.16 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.02	4	TSOP2-50/44			2016-03-31
MT40A2G16TBB-062E:F Micron Technology Inc		查询价格和库存			Yes	Active	34.3597 Gbit	16	2GX16	1.2 V		1.6 GHz	8192	SINGLE BANK PAGE BURST	DDR4 DRAM		COMMON		1	1	2000000000	2.1475 G	SYNCHRONOUS			YES		76 mA		400 µA	1.26 V	1.14 V	CMOS		R-PBGA-B96				95 °C		260		30	96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	7.5 mm	2190	compliant				5	FBGA-96
AS4C64M16D2A-25BCN Alliance Memory Inc		查询价格和库存			Yes	Active	1.0737 Gbit	16	64MX16	1.8 V				MULTI BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	64000000	67.1089 M	SYNCHRONOUS			YES					1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84		e1	3	85 °C	-40 °C	265		20	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	1689	compliant	Taiwan	EAR99	8542.32.00.32	4	FBGA-84
IS43QR16256B-083RBLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	4.295 Gbit	16	256MX16	1.2 V		1.2005 GHz	8192	DUAL BANK PAGE BURST	DDR4 DRAM	AUTO/SELF REFRESH	COMMON	8	1	1	256000000	268.4355 M	SYNCHRONOUS	3-STATE		YES	8	58 mA	1.14 V	375 µA	1.26 V	1.14 V	CMOS	INDUSTRIAL	R-PBGA-B96				95 °C	-40 °C				96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13.5 mm	7.5 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.36	5.1	FBGA-96
MTA9ASF1G72PZ-3G2R1 Micron Technology Inc		查询价格和库存			Yes	Active									DDR4 DRAM MODULE																																											2190	compliant				0
AS4C8M32SA-6BIN Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	32	8MX32	3.3 V	5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS			YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PBGA-B90			3	85 °C	-40 °C				90	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	1689	compliant	Taiwan	EAR99	8542.32.00.24	4	FBGA-90			2016-11-16
IS45S16160J-6BLA1-TR Integrated Silicon Solution Inc		查询价格和库存		Yes	Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	166 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE		YES	1,2,4,8,FP	4 mA		100 µA	3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54				85 °C	-40 °C	NOT SPECIFIED	AEC-Q100	NOT SPECIFIED	54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	2070	compliant	Mainland China, Taiwan	EAR99	8542.32.00.24	4	BGA-54
AS4C32M16D1A-5TCN Alliance Memory Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	2.5 V				FOUR BANK PAGE BURST	DDR1 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS			YES					2.7 V	2.3 V	CMOS	COMMERCIAL	R-PDSO-G66			3	70 °C					66	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	compliant	Taiwan	EAR99	8542.32.00.28	4	0.65 MM PITCH, HALOGEN AND LEAD FREE, TSOP2-66

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