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DRAM:

267,290 个筛选结果
动态随机存取存储器(Dynamic Random Access Memory,DRAM)是一种半导体存储器,主要的作用原理是利用电容内存储电荷的多寡来代表一个二进制比特(bit)是1还是0。由于在现实中晶体管会有漏电电流的现象,导致电容上所存储的电荷数量并不足以正确的判别数据,而导致数据毁损。因此对于DRAM来说,周期性地充电是一个无可避免的要件。由于这种需要定时刷新的特性,因此被称为“动态”存储器。相对来说,静态存储器(SRAM)只要存入数据后,纵使不刷新也不会丢失记忆。
SRAM (542,744)
闪存 (317,688)
DRAM (267,290)
EEPROM (149,118)
FIFO (72,010)
OTP ROM (38,069)
EPROM (22,085)
MASK ROM (10,088)
PROM (70)
所有筛选条件
  • 所有筛选条件
  • 型号
  • 访问模式
  • 最长访问时间
  • 其他特性
  • 备用内存宽度
  • 最大时钟频率 (fCLK)
  • I/O 类型
  • 交错的突发长度
  • JESD-30 代码
  • JESD-609代码
  • 长度
  • 制造商
  • 内存密度
  • 内存集成电路类型
  • 内存宽度
  • 混合内存类型
  • 湿度敏感等级
  • 功能数量
  • 端口数量
  • 端子数量
  • 字数
  • 字数代码
  • 工作模式
  • 最高工作温度
  • 最低工作温度
  • 组织
  • 输出特性
  • 可输出
  • 封装主体材料
  • 封装代码
  • 封装等效代码
  • 封装形状
  • 封装形式
  • 并行/串行
  • 生命周期
  • 是否无铅
  • 峰值回流温度(摄氏度)
型号 访问模式 (19)
最长访问时间 (50)
0.12500.163125188250
-
464419344964
-
最大时钟频率 (fCLK) (50)
662 133665831 1001 6162 133
-
8133.3583971102133.35
-
制造商 (50)
内存密度 (50)
4 096309 237 645 3124 09677 309 414 400154 618 824 704231 928 235 008309 237 645 312
-
内存宽度 (26)
15121129257384512
-
1813568
-
256137 438 953 47225634 359 738 56068 719 476 864103 079 215 168137 438 953 472
-
25632 000 000 0002568 000 000 19216 000 000 12832 000 000 000
-
50125506988106125
-
-5510-55-39-22-610
-
组织 (50)
型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 刷新周期
访问模式 内存集成电路类型 其他特性 I/O 类型 交错的突发长度 功能数量 端口数量 字数代码 字数 工作模式 输出特性 自我刷新
连续突发长度
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
mfrid
包装说明
是否符合REACH标准
COO
ECCN代码
HTS代码
YTEOL
零件包装代码
针数
AS4C4M16SA-6TIN
Alliance Memory Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT41K128M16JT-125:K
Micron Technology Inc
查询价格和库存
Yes Yes Active 2.1475 Gbit 16 128MX16 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 195 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 Not Qualified e1 95 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 compliant EAR99 8542.32.00.36 5.1 BGA 96
AS4C4M16SA-7TCN
Alliance Memory Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C8M16SA-7TCN
Alliance Memory Inc
查询价格和库存
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT47H128M16RT-25E:C
Micron Technology Inc
查询价格和库存
Yes Yes Active 2.1475 Gbit 16 128MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 330 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 12.5 mm 9 mm 2190 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 compliant EAR99 8542.32.00.36 4.75 BGA 84
AS4C16M16SA-7TCNTR
Alliance Memory Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 143 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 20 mA 55 µA 3.6 V 3 V CMOS R-PDSO-G54 3 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
MT41K256M16TW-107:P
Micron Technology Inc
查询价格和库存
Yes Active 4.295 Gbit 16 256MX16 1.35 V MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 95 °C 260 30 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 FBGA-96 not_compliant EAR99 8542.32.00.36 5.15
MT41K64M16TW-107:J
Micron Technology Inc
查询价格和库存
Yes Active 1.0737 Gbit 16 64MX16 1.35 V 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM COMMON 8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 8 28 mA 219 µA 1.45 V 1.283 V CMOS R-PBGA-B96 Not Qualified e1 95 °C NOT SPECIFIED NOT SPECIFIED 96 PLASTIC/EPOXY TFBGA BGA96,6X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 8 X 14 MM, LEAD FREE, FBGA-96 compliant EAR99 8542.32.00.32 5.07
AS4C32M16D2A-25BCN
Alliance Memory Inc
查询价格和库存
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 3 85 °C 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 1689 FBGA-84 compliant Taiwan EAR99 8542.32.00.28 4
MT48LC8M16A2P-6A:L
Micron Technology Inc
查询价格和库存
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 100 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 compliant EAR99 8542.32.00.02 4 TSOP2 54
IS43TR16256BL-107MBLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 4.295 Gbit 16 256MX16 1.35 V 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 4,8 1.45 V 1.283 V CMOS INDUSTRIAL R-PBGA-B96 e1 3 95 °C -40 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 9 mm 2070 FBGA-96 compliant Mainland China, Taiwan EAR99 8542.32.00.36 4
IS43R16320E-5TL-TR
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 536.8709 Mbit 16 32MX16 2.5 V 700 ps FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS COMMERCIAL R-PDSO-G66 70 °C NOT SPECIFIED NOT SPECIFIED 66 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
IS42S16160J-7TL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
MT47H128M8SH-25E:M
Micron Technology Inc
查询价格和库存
Yes Yes Active 1.0737 Gbit 8 128MX8 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 7 mA 210 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 10 mm 8 mm 2190 FBGA-60 compliant Mainland China, Malaysia, Taiwan EAR99 8542.32.00.32 5 BGA 60
IS42S16160J-6BLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 e1 85 °C -40 °C 260 54 PLASTIC/EPOXY TFBGA SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
MT46V64M8P-5B:J
Micron Technology Inc
查询价格和库存
Yes Active 536.8709 Mbit 8 64MX8 2.6 V 700 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 64000000 536.8709 M SYNCHRONOUS 3-STATE YES 2,4,8 5 mA 230 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 3 70 °C 260 30 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 TSOP-66 compliant EAR99 8542.32.00.28 4.25 TSOP 66
MT48LC16M16A2B4-6A:G
Micron Technology Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 167 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B54 Not Qualified e1 70 °C 260 30 54 PLASTIC/EPOXY VFBGA BGA54,9X9,32 SQUARE GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1 mm 8 mm 8 mm 2190 8 X 8 MM, LEAD FREE, VFBGA-54 compliant EAR99 8542.32.00.24 4
MT47H32M16NF-25E:H
Micron Technology Inc
查询价格和库存
Yes Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps 400 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 4,8 10 mA 215 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 2190 FBGA-84 not_compliant EAR99 8542.32.00.28 4.75 BGA 84
AS4C16M16SA-6TCN
Alliance Memory Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 260 40 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
AS4C4M16SA-6TCN
Alliance Memory Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 刷新周期
访问模式 内存集成电路类型 其他特性 I/O 类型 交错的突发长度 功能数量 端口数量 字数代码 字数 工作模式 输出特性 自我刷新
连续突发长度
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
mfrid
包装说明
是否符合REACH标准
COO
ECCN代码
HTS代码
YTEOL
零件包装代码
针数
AS4C4M16SA-6TIN
Alliance Memory Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT41K128M16JT-125:K
Micron Technology Inc
查询价格和库存
Yes Yes Active 2.1475 Gbit 16 128MX16 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 195 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 Not Qualified e1 95 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 compliant EAR99 8542.32.00.36 5.1 BGA 96
AS4C4M16SA-7TCN
Alliance Memory Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C8M16SA-7TCN
Alliance Memory Inc
查询价格和库存
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT47H128M16RT-25E:C
Micron Technology Inc
查询价格和库存
Yes Yes Active 2.1475 Gbit 16 128MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 330 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 12.5 mm 9 mm 2190 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 compliant EAR99 8542.32.00.36 4.75 BGA 84
AS4C16M16SA-7TCNTR
Alliance Memory Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 143 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 20 mA 55 µA 3.6 V 3 V CMOS R-PDSO-G54 3 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
MT41K256M16TW-107:P
Micron Technology Inc
查询价格和库存
Yes Active 4.295 Gbit 16 256MX16 1.35 V MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 95 °C 260 30 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 FBGA-96 not_compliant EAR99 8542.32.00.36 5.15
MT41K64M16TW-107:J
Micron Technology Inc
查询价格和库存
Yes Active 1.0737 Gbit 16 64MX16 1.35 V 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM COMMON 8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 8 28 mA 219 µA 1.45 V 1.283 V CMOS R-PBGA-B96 Not Qualified e1 95 °C NOT SPECIFIED NOT SPECIFIED 96 PLASTIC/EPOXY TFBGA BGA96,6X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 8 X 14 MM, LEAD FREE, FBGA-96 compliant EAR99 8542.32.00.32 5.07
AS4C32M16D2A-25BCN
Alliance Memory Inc
查询价格和库存
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 3 85 °C 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 1689 FBGA-84 compliant Taiwan EAR99 8542.32.00.28 4
MT48LC8M16A2P-6A:L
Micron Technology Inc
查询价格和库存
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 100 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 compliant EAR99 8542.32.00.02 4 TSOP2 54
IS43TR16256BL-107MBLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 4.295 Gbit 16 256MX16 1.35 V 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 4,8 1.45 V 1.283 V CMOS INDUSTRIAL R-PBGA-B96 e1 3 95 °C -40 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 9 mm 2070 FBGA-96 compliant Mainland China, Taiwan EAR99 8542.32.00.36 4
IS43R16320E-5TL-TR
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 536.8709 Mbit 16 32MX16 2.5 V 700 ps FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS COMMERCIAL R-PDSO-G66 70 °C NOT SPECIFIED NOT SPECIFIED 66 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2, compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
IS42S16160J-7TL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
MT47H128M8SH-25E:M
Micron Technology Inc
查询价格和库存
Yes Yes Active 1.0737 Gbit 8 128MX8 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 7 mA 210 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 10 mm 8 mm 2190 FBGA-60 compliant Mainland China, Malaysia, Taiwan EAR99 8542.32.00.32 5 BGA 60
IS42S16160J-6BLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 e1 85 °C -40 °C 260 54 PLASTIC/EPOXY TFBGA SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 2070 compliant Mainland China, Taiwan EAR99 8542.32.00.24 4
MT46V64M8P-5B:J
Micron Technology Inc
查询价格和库存
Yes Active 536.8709 Mbit 8 64MX8 2.6 V 700 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 64000000 536.8709 M SYNCHRONOUS 3-STATE YES 2,4,8 5 mA 230 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 3 70 °C 260 30 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 TSOP-66 compliant EAR99 8542.32.00.28 4.25 TSOP 66
MT48LC16M16A2B4-6A:G
Micron Technology Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5.4 ns 167 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL S-PBGA-B54 Not Qualified e1 70 °C 260 30 54 PLASTIC/EPOXY VFBGA BGA54,9X9,32 SQUARE GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1 mm 8 mm 8 mm 2190 8 X 8 MM, LEAD FREE, VFBGA-54 compliant EAR99 8542.32.00.24 4
MT47H32M16NF-25E:H
Micron Technology Inc
查询价格和库存
Yes Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps 400 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 4,8 10 mA 215 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 2190 FBGA-84 not_compliant EAR99 8542.32.00.28 4.75 BGA 84
AS4C16M16SA-6TCN
Alliance Memory Inc
查询价格和库存
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 260 40 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
AS4C4M16SA-6TCN
Alliance Memory Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
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