射频小信号场效应晶体管封装型号_射频小信号场效应晶体管厂家价格-bom2buy

型号

型号						Most Relevant									Technical								Compliance					Operating Conditions					Physical							Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	极性/信道类型	表面贴装	配置	端子数量	最小漏源击穿电压	最高频带	元件数量	最小功率增益 (Gp)	最大漏极电流 (ID)	其他特性	最大反馈电容 (Crss)	FET 技术	工作模式	功耗环境最大值	最大功率耗散 (Abs)	晶体管应用	晶体管元件材料	JEDEC-95代码	JESD-30 代码	JESD-609代码	认证状态	参考标准	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	处于峰值回流温度下的最长时间	外壳连接	封装主体材料	封装形状	封装形式	端子面层	端子形式	端子位置	Source Content uid	mfrid	零件包装代码	包装说明	针数	制造商包装代码	是否符合REACH标准	Country Of Origin	ECCN代码	YTEOL	HTS代码
MMBFJ310LT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3	25 V	ULTRA HIGH FREQUENCY BAND	1				2.5 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON	TO-236	R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBFJ310LT1G	2260	SOT-23 (TO-236) 3 LEAD	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	3	318	compliant	Mainland China	EAR99	6.82
MMBFJ310LT3G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3	25 V	ULTRA HIGH FREQUENCY BAND	1				2.5 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON	TO-236AB	R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBFJ310LT3G	2260	SOT-23 (TO-236) 3 LEAD		3	318	compliant	Mainland China	EAR99	6.82
MMBFJ309LT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3	25 V	ULTRA HIGH FREQUENCY BAND	1				2.5 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON	TO-236	R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBFJ309LT1G	2260	SOT-23 (TO-236) 3 LEAD	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	3	318	compliant	Mainland China	EAR99	6.82
MMBFU310LT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3	25 V	ULTRA HIGH FREQUENCY BAND	1				2.5 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON	TO-236AB	R-PDSO-G3	e3	Not Qualified		1	150 °C		260	40		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBFU310LT1G	2260	SOT-23 (TO-236) 3 LEAD	CASE 318-08, 3 PIN	3	318	compliant	Mainland China	EAR99	6.82
MMBF4416 onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3		VERY HIGH FREQUENCY BAND	1	18 dB			0.9 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON		R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBF4416	2260	SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P	SOT-23, 3 PIN		318	compliant	Mainland China	EAR99	6.82
MMBF5484 onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3			1				1 pF	JUNCTION	DEPLETION MODE	225 mW	225 mW	AMPLIFIER	SILICON	TO-236AB	R-PDSO-G3	e3	Not Qualified		1	150 °C	-55 °C	260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	DUAL	MMBF5484	2260	SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P			318	compliant	Mainland China	EAR99	6.82	8541.21.00.95
MMBF5485 onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3		ULTRA HIGH FREQUENCY BAND	1				1 pF	METAL-OXIDE SEMICONDUCTOR	DEPLETION MODE		350 mW	AMPLIFIER	SILICON		R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBF5485	2260	SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P			318	compliant	Mainland China	EAR99	6.82
BF256B onsemi		查询价格和库存		Yes		Active	N-CHANNEL	NO	SINGLE	3		ULTRA HIGH FREQUENCY BAND	1					JUNCTION	DEPLETION MODE		350 mW	AMPLIFIER	SILICON	TO-92	O-PBCY-T3	e3				150 °C					PLASTIC/EPOXY	ROUND	CYLINDRICAL	MATTE TIN	THROUGH-HOLE	BOTTOM	BF256B	2260	TO-92-3			135AN	compliant	Mainland China	EAR99	6.35
CPH6904-TL-E onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES										JUNCTION			700 mW					e6			1	150 °C		260	30					TIN BISMUTH			CPH6904-TL-E	2260	CPH6		6	318BD	compliant	Mainland China	EAR99	6.82
SMMBFJ310LT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES										JUNCTION			225 mW					e3			1	150 °C		260	30					Matte Tin (Sn) - annealed			SMMBFJ310LT1G	2260	SOT-23 (TO-236) 3 LEAD		3	318	compliant	Mainland China	EAR99	6.82
CE3514M4-C2 California Eastern Laboratories (CEL)		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	4	3 V	X BAND	1	10.5 dB	15 mA			JUNCTION	DEPLETION MODE			AMPLIFIER	SILICON		R-PDSO-F4					125 °C	-55 °C				PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE		FLAT	DUAL		1822		SMALL OUTLINE, R-PDSO-F4			compliant		EAR99	6.82
NTE132 NTE Electronics Inc		查询价格和库存				Active	N-CHANNEL	NO	SINGLE	3		VERY HIGH FREQUENCY BAND	1				1.2 pF	JUNCTION	DEPLETION MODE		310 mW	AMPLIFIER	SILICON	TO-106	O-PBCY-W3		Not Qualified								PLASTIC/EPOXY	ROUND	CYLINDRICAL		WIRE	BOTTOM		2243					unknown		EAR99	6.35
NTE222 NTE Electronics Inc		查询价格和库存			Yes	Active	N-CHANNEL	NO	SINGLE	4	25 V	VERY HIGH FREQUENCY BAND	1	14 dB	50 mA		0.03 pF	METAL-OXIDE SEMICONDUCTOR	DUAL GATE, DEPLETION MODE		330 mW	AMPLIFIER	SILICON	TO-72	O-MBCY-W4		Not Qualified					NOT SPECIFIED	NOT SPECIFIED	SOURCE	METAL	ROUND	CYLINDRICAL		WIRE	BOTTOM		2243					unknown		EAR99	6.35
NTE452 NTE Electronics Inc		查询价格和库存			Yes	Active	N-CHANNEL	NO	SINGLE	4	30 V	VERY HIGH FREQUENCY BAND	1	10 dB			0.8 pF	JUNCTION	DEPLETION MODE		300 mW	AMPLIFIER	SILICON	TO-72	O-MBCY-W4		Not Qualified					NOT SPECIFIED	NOT SPECIFIED		METAL	ROUND	CYLINDRICAL		WIRE	BOTTOM		2243		CYLINDRICAL, O-MBCY-W4			unknown		EAR99	6.35
NTE221 NTE Electronics Inc		查询价格和库存			Yes	Active	N-CHANNEL	NO	SINGLE	4	20 V	VERY HIGH FREQUENCY BAND	1				0.03 pF	METAL-OXIDE SEMICONDUCTOR	DUAL GATE, DEPLETION MODE		400 mW	AMPLIFIER	SILICON	TO-72	O-MBCY-W4		Not Qualified					NOT SPECIFIED	NOT SPECIFIED	SOURCE	METAL	ROUND	CYLINDRICAL		WIRE	BOTTOM		2243		CYLINDRICAL, O-MBCY-W4			unknown		EAR99	6.35
CLF1G0060-10U Ampleon		查询价格和库存				Contact Manufacturer	N-CHANNEL	YES	SINGLE	2	150 V	C BAND	1					HIGH ELECTRON MOBILITY	DEPLETION MODE			AMPLIFIER	GALLIUM NITRIDE		R-CDFM-F2			IEC-60134						SOURCE	CERAMIC, METAL-SEALED COFIRED	RECTANGULAR	FLANGE MOUNT		FLAT	DUAL		216507667		FLANGE MOUNT, R-CDFM-F2			unknown		EAR99
J211-D74Z onsemi		查询价格和库存		Yes		Active	N-CHANNEL	NO	SINGLE	3		VERY HIGH FREQUENCY BAND	1					JUNCTION	DEPLETION MODE		350 mW	AMPLIFIER	SILICON	TO-92	O-PBCY-T3	e3	Not Qualified			150 °C					PLASTIC/EPOXY	ROUND	CYLINDRICAL	MATTE TIN	THROUGH-HOLE	BOTTOM	J211-D74Z	2260	TO-92 3L			135AR	compliant	Mainland China	EAR99	6.35
2SK1215IGFTL-E Renesas Electronics Corporation		查询价格和库存				Active	N-CHANNEL	YES	SINGLE	3	20 V	VERY HIGH FREQUENCY BAND	1	24 dB	30 mA			METAL-OXIDE SEMICONDUCTOR	DEPLETION MODE			AMPLIFIER	SILICON		R-PDSO-G3		Not Qualified								PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE		GULL WING	DUAL	2SK1215IGFTL-E	2354	SC-70	SC-70, CMPAK-3	3		compliant		EAR99	2
ATF-35143-BLKG Broadcom Limited		查询价格和库存			Yes	Obsolete	N-CHANNEL	YES	SINGLE	4	5.5 V	L BAND	1	16.5 dB		LOW NOISE		HIGH ELECTRON MOBILITY	ENHANCEMENT MODE	300 mW		AMPLIFIER	SILICON		R-PDSO-G4	e3	Not Qualified		1	160 °C		260	20	SOURCE	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	DUAL		1807		SMALL OUTLINE, R-PDSO-G4			compliant		EAR99	0	8541.21.00.75
ATF-58143-BLKG Broadcom Limited		查询价格和库存			Yes	Obsolete	N-CHANNEL	YES	SINGLE	4	5 V	C BAND	1	15 dB	100 mA			HIGH ELECTRON MOBILITY	ENHANCEMENT MODE	500 mW		AMPLIFIER	SILICON		R-PDSO-G4	e3	Not Qualified		1	150 °C		260	20	SOURCE	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	DUAL		1807		SMALL OUTLINE, R-PDSO-G4			compliant		EAR99	0	8541.21.00.75

型号						Most Relevant									Technical								Compliance					Operating Conditions					Physical							Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	极性/信道类型	表面贴装	配置	端子数量	最小漏源击穿电压	最高频带	元件数量	最小功率增益 (Gp)	最大漏极电流 (ID)	其他特性	最大反馈电容 (Crss)	FET 技术	工作模式	功耗环境最大值	最大功率耗散 (Abs)	晶体管应用	晶体管元件材料	JEDEC-95代码	JESD-30 代码	JESD-609代码	认证状态	参考标准	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	处于峰值回流温度下的最长时间	外壳连接	封装主体材料	封装形状	封装形式	端子面层	端子形式	端子位置	Source Content uid	mfrid	零件包装代码	包装说明	针数	制造商包装代码	是否符合REACH标准	Country Of Origin	ECCN代码	YTEOL	HTS代码
MMBFJ310LT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3	25 V	ULTRA HIGH FREQUENCY BAND	1				2.5 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON	TO-236	R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBFJ310LT1G	2260	SOT-23 (TO-236) 3 LEAD	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	3	318	compliant	Mainland China	EAR99	6.82
MMBFJ310LT3G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3	25 V	ULTRA HIGH FREQUENCY BAND	1				2.5 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON	TO-236AB	R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBFJ310LT3G	2260	SOT-23 (TO-236) 3 LEAD		3	318	compliant	Mainland China	EAR99	6.82
MMBFJ309LT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3	25 V	ULTRA HIGH FREQUENCY BAND	1				2.5 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON	TO-236	R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBFJ309LT1G	2260	SOT-23 (TO-236) 3 LEAD	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	3	318	compliant	Mainland China	EAR99	6.82
MMBFU310LT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3	25 V	ULTRA HIGH FREQUENCY BAND	1				2.5 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON	TO-236AB	R-PDSO-G3	e3	Not Qualified		1	150 °C		260	40		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBFU310LT1G	2260	SOT-23 (TO-236) 3 LEAD	CASE 318-08, 3 PIN	3	318	compliant	Mainland China	EAR99	6.82
MMBF4416 onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3		VERY HIGH FREQUENCY BAND	1	18 dB			0.9 pF	JUNCTION	DEPLETION MODE		225 mW	AMPLIFIER	SILICON		R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBF4416	2260	SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P	SOT-23, 3 PIN		318	compliant	Mainland China	EAR99	6.82
MMBF5484 onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3			1				1 pF	JUNCTION	DEPLETION MODE	225 mW	225 mW	AMPLIFIER	SILICON	TO-236AB	R-PDSO-G3	e3	Not Qualified		1	150 °C	-55 °C	260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	DUAL	MMBF5484	2260	SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P			318	compliant	Mainland China	EAR99	6.82	8541.21.00.95
MMBF5485 onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	3		ULTRA HIGH FREQUENCY BAND	1				1 pF	METAL-OXIDE SEMICONDUCTOR	DEPLETION MODE		350 mW	AMPLIFIER	SILICON		R-PDSO-G3	e3	Not Qualified		1	150 °C		260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	MMBF5485	2260	SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P			318	compliant	Mainland China	EAR99	6.82
BF256B onsemi		查询价格和库存		Yes		Active	N-CHANNEL	NO	SINGLE	3		ULTRA HIGH FREQUENCY BAND	1					JUNCTION	DEPLETION MODE		350 mW	AMPLIFIER	SILICON	TO-92	O-PBCY-T3	e3				150 °C					PLASTIC/EPOXY	ROUND	CYLINDRICAL	MATTE TIN	THROUGH-HOLE	BOTTOM	BF256B	2260	TO-92-3			135AN	compliant	Mainland China	EAR99	6.35
CPH6904-TL-E onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES										JUNCTION			700 mW					e6			1	150 °C		260	30					TIN BISMUTH			CPH6904-TL-E	2260	CPH6		6	318BD	compliant	Mainland China	EAR99	6.82
SMMBFJ310LT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES										JUNCTION			225 mW					e3			1	150 °C		260	30					Matte Tin (Sn) - annealed			SMMBFJ310LT1G	2260	SOT-23 (TO-236) 3 LEAD		3	318	compliant	Mainland China	EAR99	6.82
CE3514M4-C2 California Eastern Laboratories (CEL)		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE	4	3 V	X BAND	1	10.5 dB	15 mA			JUNCTION	DEPLETION MODE			AMPLIFIER	SILICON		R-PDSO-F4					125 °C	-55 °C				PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE		FLAT	DUAL		1822		SMALL OUTLINE, R-PDSO-F4			compliant		EAR99	6.82
NTE132 NTE Electronics Inc		查询价格和库存				Active	N-CHANNEL	NO	SINGLE	3		VERY HIGH FREQUENCY BAND	1				1.2 pF	JUNCTION	DEPLETION MODE		310 mW	AMPLIFIER	SILICON	TO-106	O-PBCY-W3		Not Qualified								PLASTIC/EPOXY	ROUND	CYLINDRICAL		WIRE	BOTTOM		2243					unknown		EAR99	6.35
NTE222 NTE Electronics Inc		查询价格和库存			Yes	Active	N-CHANNEL	NO	SINGLE	4	25 V	VERY HIGH FREQUENCY BAND	1	14 dB	50 mA		0.03 pF	METAL-OXIDE SEMICONDUCTOR	DUAL GATE, DEPLETION MODE		330 mW	AMPLIFIER	SILICON	TO-72	O-MBCY-W4		Not Qualified					NOT SPECIFIED	NOT SPECIFIED	SOURCE	METAL	ROUND	CYLINDRICAL		WIRE	BOTTOM		2243					unknown		EAR99	6.35
NTE452 NTE Electronics Inc		查询价格和库存			Yes	Active	N-CHANNEL	NO	SINGLE	4	30 V	VERY HIGH FREQUENCY BAND	1	10 dB			0.8 pF	JUNCTION	DEPLETION MODE		300 mW	AMPLIFIER	SILICON	TO-72	O-MBCY-W4		Not Qualified					NOT SPECIFIED	NOT SPECIFIED		METAL	ROUND	CYLINDRICAL		WIRE	BOTTOM		2243		CYLINDRICAL, O-MBCY-W4			unknown		EAR99	6.35
NTE221 NTE Electronics Inc		查询价格和库存			Yes	Active	N-CHANNEL	NO	SINGLE	4	20 V	VERY HIGH FREQUENCY BAND	1				0.03 pF	METAL-OXIDE SEMICONDUCTOR	DUAL GATE, DEPLETION MODE		400 mW	AMPLIFIER	SILICON	TO-72	O-MBCY-W4		Not Qualified					NOT SPECIFIED	NOT SPECIFIED	SOURCE	METAL	ROUND	CYLINDRICAL		WIRE	BOTTOM		2243		CYLINDRICAL, O-MBCY-W4			unknown		EAR99	6.35
CLF1G0060-10U Ampleon		查询价格和库存				Contact Manufacturer	N-CHANNEL	YES	SINGLE	2	150 V	C BAND	1					HIGH ELECTRON MOBILITY	DEPLETION MODE			AMPLIFIER	GALLIUM NITRIDE		R-CDFM-F2			IEC-60134						SOURCE	CERAMIC, METAL-SEALED COFIRED	RECTANGULAR	FLANGE MOUNT		FLAT	DUAL		216507667		FLANGE MOUNT, R-CDFM-F2			unknown		EAR99
J211-D74Z onsemi		查询价格和库存		Yes		Active	N-CHANNEL	NO	SINGLE	3		VERY HIGH FREQUENCY BAND	1					JUNCTION	DEPLETION MODE		350 mW	AMPLIFIER	SILICON	TO-92	O-PBCY-T3	e3	Not Qualified			150 °C					PLASTIC/EPOXY	ROUND	CYLINDRICAL	MATTE TIN	THROUGH-HOLE	BOTTOM	J211-D74Z	2260	TO-92 3L			135AR	compliant	Mainland China	EAR99	6.35
2SK1215IGFTL-E Renesas Electronics Corporation		查询价格和库存				Active	N-CHANNEL	YES	SINGLE	3	20 V	VERY HIGH FREQUENCY BAND	1	24 dB	30 mA			METAL-OXIDE SEMICONDUCTOR	DEPLETION MODE			AMPLIFIER	SILICON		R-PDSO-G3		Not Qualified								PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE		GULL WING	DUAL	2SK1215IGFTL-E	2354	SC-70	SC-70, CMPAK-3	3		compliant		EAR99	2
ATF-35143-BLKG Broadcom Limited		查询价格和库存			Yes	Obsolete	N-CHANNEL	YES	SINGLE	4	5.5 V	L BAND	1	16.5 dB		LOW NOISE		HIGH ELECTRON MOBILITY	ENHANCEMENT MODE	300 mW		AMPLIFIER	SILICON		R-PDSO-G4	e3	Not Qualified		1	160 °C		260	20	SOURCE	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	DUAL		1807		SMALL OUTLINE, R-PDSO-G4			compliant		EAR99	0	8541.21.00.75
ATF-58143-BLKG Broadcom Limited		查询价格和库存			Yes	Obsolete	N-CHANNEL	YES	SINGLE	4	5 V	C BAND	1	15 dB	100 mA			HIGH ELECTRON MOBILITY	ENHANCEMENT MODE	500 mW		AMPLIFIER	SILICON		R-PDSO-G4	e3	Not Qualified		1	150 °C		260	20	SOURCE	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	DUAL		1807		SMALL OUTLINE, R-PDSO-G4			compliant		EAR99	0	8541.21.00.75

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