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Transistors > Power Bipolar Transistors

ZTX853STZ

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ZTX853STZ
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Diodes Incorporated

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3

Market Average:
¥2.796
Total Inventory:
15,706
Lifecycle Status: Transferred
7.4HighRisk Rank:DesignProductionLong Term
Technical Details
Price & Stock

Parametrics

Rohs Code
符合
Part Life Cycle Code
Transferred
Package Description
TO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Popularity
169
Risk Rank
7.43
Collector Current-Max (IC)
4 A
Collector-Emitter Voltage-Max
100 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
20
JESD-30 Code
R-PSIP-W3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
200 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
NPN
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
WIRE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
130 MHz
VCEsat-Max
0.2 V
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