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Transistors > RF Power Bipolar Transistors

VHB25-12S

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RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4

Market Average：

-

Total Inventory：

-

Lifecycle Status： Active

Technical Details

Parametrics

Part Life Cycle Code

Active

Package Description

Pin Count

4

Reach Compliance Code

unknown

ECCN Code

EAR99

Popularity

0

Risk Rank

6.41

Case Connection

EMITTER

Collector Current-Max (IC)

4 A

Collector-Base Capacitance-Max

110 pF

Collector-Emitter Voltage-Max

18 V

Configuration

SINGLE

DC Current Gain-Min (hFE)

20

Highest Frequency Band

VERY HIGH FREQUENCY BAND

JESD-30 Code

O-CRPM-F4

Number of Elements

1

Number of Terminals

4

Operating Temperature-Max

200 °C

Package Body Material

Package Shape

ROUND

Package Style

POST/STUD MOUNT

Polarity/Channel Type

NPN

Power Dissipation-Max (Abs)

65 W

Qualification Status

Not Qualified

Surface Mount

NO

Terminal Form

FLAT

Terminal Position

RADIAL

Transistor Application

AMPLIFIER

Transistor Element Material

SILICON

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