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Transistors > Power Field-Effect Transistors

SPA15N60C3XK

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SPA15N60C3XK
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Infineon

Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3

Market Average:
¥11.3372
Total Inventory:
-
Lifecycle Status: Active
7.6DanRisk Rank:DesignProductionLong Term
Technical Details
Price & Stock

Parametrics

Rohs Code
符合
Part Life Cycle Code
Active
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
15 weeks
Popularity
4
Risk Rank
7.61
YTEOL
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Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
460 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
15 A
Drain-source On Resistance-Max
0.28 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
45 A
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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