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Transistors > Small Signal Bipolar Transistors

RN2402,LF(B

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RN2402,LF(B
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Toshiba America Electronic Components

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Market Average:
-
Total Inventory:
-
Lifecycle Status: Active
7.5HighRisk Rank:DesignProductionLong Term
Technical Details
Price & Stock
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Parametrics

Part Life Cycle Code
Active
Reach Compliance Code
unknown
Popularity
20
Risk Rank
7.49
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
Collector-Base Capacitance-Max
6 pF
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
50
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
PNP
Power Dissipation Ambient-Max
0.2 W
Power Dissipation-Max (Abs)
0.2 W
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
200 MHz
VCEsat-Max
0.3 V
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