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Transistors > RF Power Field-Effect Transistors

PTFB212503FLV2R250

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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-34288-4/2, 4 PIN

Market Average：

-

Total Inventory：

-

Lifecycle Status： Active

Technical Details

Parametrics

Source Content uid

PTFB212503FLV2R250

Pbfree Code

不含铅

Rohs Code

符合

Part Life Cycle Code

Active

Package Description

Pin Count

4

Reach Compliance Code

compliant

ECCN Code

EAR99

Popularity

3

Risk Rank

6.5

Case Connection

SOURCE

Configuration

SINGLE

DS Breakdown Voltage-Min

65 V

FET Technology

Highest Frequency Band

S BAND

JESD-30 Code

R-CQFP-X4

JESD-609 Code

e4

Number of Elements

1

Number of Terminals

4

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

200 °C

Package Body Material

Package Shape

RECTANGULAR

Package Style

FLATPACK

Polarity/Channel Type

N-CHANNEL

Power Gain-Min (Gp)

17 dB

Surface Mount

YES

Terminal Finish

GOLD

Terminal Form

UNSPECIFIED

Terminal Position

QUAD

Transistor Application

AMPLIFIER

Transistor Element Material

SILICON

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