Part Life Cycle Code
Obsolete
Reach Compliance Code
unknown
Additional Feature
AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas)
600 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
Drain Current-Max (ID)
23 A
Drain-source On Resistance-Max
0.11 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
180 W
Pulsed Drain Current-Max (IDM)
69 A
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON