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Transistors > Power Field-Effect Transistors

MTW23N25E

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MTW23N25E
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Motorola Semiconductor Products
  • ISC 无锡固电
  • Motorola Semiconductor Products

Power Field-Effect Transistor, 23A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE

Market Average:
-
Total Inventory:
56
Lifecycle Status: Obsolete
9.8DanRisk Rank:DesignProductionLong Term
Technical Details
Price & Stock

Parametrics

Rohs Code
不符合
Part Life Cycle Code
Obsolete
Reach Compliance Code
unknown
ECCN Code
EAR99
Popularity
0
Risk Rank
9.82
YTEOL
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Additional Feature
AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas)
600 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
Drain Current-Max (ID)
23 A
Drain-source On Resistance-Max
0.11 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AE
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
180 W
Pulsed Drain Current-Max (IDM)
69 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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