MSMBJ10CAE3中文资料_PDF数据手册

MSMBJ10CAE3

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Microchip Technology Inc

Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA

Technical Details

Price & Stock

Parametrics

Rohs Code

符合

Part Life Cycle Code

Active

Package Description

Reach Compliance Code

not_compliant

Factory Lead Time

40 weeks

Popularity

Risk Rank

6.95

Additional Feature

HIGH RELIABILITY

Breakdown Voltage-Max

12.3 V

Breakdown Voltage-Min

11.1 V

Configuration

SINGLE

Diode Element Material

SILICON

Diode Type

JEDEC-95 Code

DO-214AA

JESD-30 Code

R-PDSO-J2

JESD-609 Code

Moisture Sensitivity Level

Non-rep Peak Rev Power Dis-Max

600 W

Number of Elements

Number of Terminals

Operating Temperature-Max

150 °C

Operating Temperature-Min

-65 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity

BIDIRECTIONAL

Power Dissipation-Max

1.38 W

Qualification Status

Not Qualified

Rep Pk Reverse Voltage-Max

10 V

Surface Mount

YES

Technology

AVALANCHE

Terminal Finish

MATTE TIN

Terminal Form

J BEND

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

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61 South Fair Oaks Avenue, Suite 200

Pasadena, CA 91105, USA

Suzhou Office

Zhongxin Building, No. 15 Moon Bay Road, Suzhou Industrial Park 4406-4411

Suzhou City, Jiangsu Province, 215021

Email：service@bom2buy.com

phone：(0512) 62988549

MSMBJ10CAE3

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MSMBJ10CAE3

Parametrics

Price History

Stock History

Help

Related Sites

Contact Us

US Headquarters

Suzhou Office