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Transistors > RF Power Bipolar Transistors

MRF1946

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MRF1946
Added to BOM:

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, CASE 211-07, 4 PIN

Market Average:
-
Total Inventory:
-
Lifecycle Status: Obsolete
8.5DanRisk Rank:DesignProductionLong Term
Technical Details

Parametrics

Rohs Code
不符合
Part Life Cycle Code
Obsolete
Package Description
CASE 211-07, 4 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Popularity
134
Risk Rank
8.51
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Collector Current-Max (IC)
8 A
Collector-Base Capacitance-Max
100 pF
Collector-Emitter Voltage-Max
16 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
40
Highest Frequency Band
VERY HIGH FREQUENCY BAND
JESD-30 Code
O-CRFM-F4
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
4
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
100 W
Power Gain-Min (Gp)
10 dB
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
FLAT
Terminal Position
RADIAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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