MJD117T4中文资料_PDF数据手册

MJD117T4

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STMicroelectronics

ON Semiconductor
STMicroelectronics

Transistor

Technical Details

Price & Stock

Parametrics

Rohs Code

符合

Part Life Cycle Code

Active

Package Description

DPAK-3/2

Reach Compliance Code

compliant

ECCN Code

EAR99

Popularity

1425

Risk Rank

7.54

Collector Current-Max (IC)

2 A

Collector-Base Capacitance-Max

200 pF

Collector-Emitter Voltage-Max

100 V

Configuration

DARLINGTON

DC Current Gain-Min (hFE)

200

JEDEC-95 Code

TO-252

JESD-30 Code

R-PSSO-G2

Number of Elements

Number of Terminals

Operating Temperature-Max

150 °C

Operating Temperature-Min

-65 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

PNP

Power Dissipation Ambient-Max

1.75 W

Power Dissipation-Max (Abs)

20 W

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Transition Frequency-Nom (fT)

25 MHz

VCEsat-Max

3 V

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MJD117T4

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MJD117T4

Parametrics

Price History

Stock History

Help

Related Sites

Contact Us

US Headquarters

Suzhou Office