Source Content uid
IPL65R340CFDAUMA1
Part Life Cycle Code
Obsolete
Package Description
VSON-4
Reach Compliance Code
not_compliant
Factory Lead Time
4 weeks
Avalanche Energy Rating (Eas)
290 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
Drain Current-Max (ID)
10.9 A
Drain-source On Resistance-Max
0.34 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level
2A
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
104.2 W
Pulsed Drain Current-Max (IDM)
32 A
Transistor Application
SWITCHING
Transistor Element Material
SILICON