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Transistors > Power Field-Effect Transistors

IPG20N04S409ATMA1

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IPG20N04S409ATMA1
Added to BOM:

Infineon
  • Infineon
  • Rochester Electronics LLC

Power Field-Effect Transistor, 20A I(D), 40V, 0.0086ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Market Average:
¥7.743
Total Inventory:
1,382,728
Lifecycle Status: Obsolete
8.8DanRisk Rank:DesignProductionLong Term
Technical Details
Price & Stock

Parametrics

Source Content uid
IPG20N04S409ATMA1
Rohs Code
符合
Part Life Cycle Code
Obsolete
Package Description
GREEN, PLASTIC, TDSON-8
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 weeks
Popularity
289
Risk Rank
8.81
YTEOL
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Avalanche Energy Rating (Eas)
145 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.0086 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
80 A
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Element Material
SILICON
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