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FZT788B

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Diodes Incorporated

Diodes Incorporated
ISC 无锡固电

Power Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

Technical Details

Price & Stock

Parametrics

Rohs Code

符合

Part Life Cycle Code

Transferred

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Popularity

877

Risk Rank

7.3

Case Connection

COLLECTOR

Collector Current-Max (IC)

3 A

Collector-Emitter Voltage-Max

15 V

Configuration

SINGLE

DC Current Gain-Min (hFE)

150

JESD-30 Code

R-PDSO-G4

JESD-609 Code

Moisture Sensitivity Level

Number of Elements

Number of Terminals

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

PNP

Power Dissipation-Max (Abs)

2 W

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Transition Frequency-Nom (fT)

100 MHz

VCEsat-Max

0.5 V

Reference Designs

(1)

LDO, Buck/Boost, 2 Sync Buck, Sync Boost Reference Design

PR038: LDO, Buck/Boost, 2 Sync. Buck, Sync. Boost with Vin 2.7-4.2 V LiION or 4.5-6.5 V adapter. Multiple output voltages of 1.5 V, 2.5 V, 3.3 V and 8 V. The total output power is 5.5 W.

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Pasadena, CA 91105, USA

Suzhou Office

Zhongxin Building, No. 15 Moon Bay Road, Suzhou Industrial Park 4406-4411

Suzhou City, Jiangsu Province, 215021

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FZT788B

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FZT788B

Parametrics

Reference Designs

Price History

Stock History

Help

Related Sites

Contact Us

US Headquarters

Suzhou Office