Part Life Cycle Code
Active
Package Description
DFN2020-6
Reach Compliance Code
compliant
Factory Lead Time
8 weeks
Avalanche Energy Rating (Eas)
32.4 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
11.6 A
Drain-source On Resistance-Max
0.0115 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
27 pF
Moisture Sensitivity Level
1
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.35 W
Pulsed Drain Current-Max (IDM)
80 A
Reference Standard
AEC-Q101; IATF 16949; MIL-STD-202
Terminal Finish
Matte Tin (Sn) - annealed
Transistor Application
SWITCHING
Transistor Element Material
SILICON