Source Content uid
BSZ160N10NS3GATMA1
Part Life Cycle Code
Active
Package Description
TSDSON-8
Reach Compliance Code
not_compliant
Avalanche Energy Rating (Eas)
80 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
40 A
Drain-source On Resistance-Max
0.016 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level
1
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
63 W
Pulsed Drain Current-Max (IDM)
160 A
Qualification Status
Not Qualified
Transistor Application
SWITCHING
Transistor Element Material
SILICON