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Transistors > Power Field-Effect Transistors

BSZ160N10NS3GATMA1

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BSZ160N10NS3GATMA1
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Infineon

Power Field-Effect Transistor, 8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Market Average:
¥4.9039
Total Inventory:
64,434
Lifecycle Status: Active
2.2LowRisk Rank:DesignProductionLong Term
Technical Details
Price & Stock

Parametrics

Source Content uid
BSZ160N10NS3GATMA1
Pbfree Code
含铅
Rohs Code
符合
Part Life Cycle Code
Active
Package Description
TSDSON-8
Pin Count
8
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Popularity
2200
Risk Rank
2.19
YTEOL
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Avalanche Energy Rating (Eas)
80 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
40 A
Drain-source On Resistance-Max
0.016 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
S-PDSO-N8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
63 W
Pulsed Drain Current-Max (IDM)
160 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
NO LEAD
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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