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Power Field-Effect Transistor, 24A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Technical Details

Price & Stock

Parametrics

Source Content uid

BSC027N04LSG

Pbfree Code

不含铅

Rohs Code

符合

Part Life Cycle Code

Not Recommended

Package Description

GREEN, PLASTIC, TDSON-8

Pin Count

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Popularity

2049

Risk Rank

9.11

YTEOL

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Additional Feature

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas)

115 mJ

Case Connection

DRAIN

Configuration

DS Breakdown Voltage-Min

40 V

Drain Current-Max (ID)

24 A

Drain-source On Resistance-Max

0.0041 Ω

FET Technology

JESD-30 Code

R-PDSO-F8

JESD-609 Code

Moisture Sensitivity Level

Number of Elements

Number of Terminals

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

83 W

Pulsed Drain Current-Max (IDM)

400 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

Tin (Sn)

Terminal Form

FLAT

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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BSC027N04LSG

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BSC027N04LSG

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Stock History

Help

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Contact Us

US Headquarters

Suzhou Office