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Transistors > Power Field-Effect Transistors

BSC011N03LSATMA1

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BSC011N03LSATMA1
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Infineon

Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Market Average:
¥4.5815
Total Inventory:
175,537
Lifecycle Status: Active
1.3LowRisk Rank:DesignProductionLong Term
Technical Details
Price & Stock

Parametrics

Source Content uid
BSC011N03LSATMA1
Pbfree Code
含铅
Rohs Code
符合
Part Life Cycle Code
Active
Package Description
GREEN, PLASTIC, TDSON-8
Pin Count
8
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
16 weeks 3 days
Popularity
1858
Risk Rank
1.32
Avalanche Energy Rating (Eas)
190 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
37 A
Drain-source On Resistance-Max
0.0014 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
400 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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