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Transistors > RF Power Bipolar Transistors

BLY89C

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BLY89C
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RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,

Market Average:
-
Total Inventory:
-
Lifecycle Status: Active
6.5HighRisk Rank:DesignProductionLong Term
Technical Details

Parametrics

Part Life Cycle Code
Active
Package Description
POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code
unknown
Country Of Origin
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ECCN Code
EAR99
Popularity
0
Risk Rank
6.53
YTEOL
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Collector Current-Max (IC)
6 A
Collector-Base Capacitance-Max
130 pF
Collector-Emitter Voltage-Max
18 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
10
Highest Frequency Band
VERY HIGH FREQUENCY BAND
JESD-30 Code
O-CRPM-F4
Number of Elements
1
Number of Terminals
4
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
ROUND
Package Style
POST/STUD MOUNT
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
73 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
FLAT
Terminal Position
RADIAL
Transistor Element Material
SILICON
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