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Transistors > RF Power Field-Effect Transistors

BLF878

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BLF878
Added to BOM:

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4

Market Average:
¥1609.6802
Total Inventory:
-
Lifecycle Status: Obsolete
9.6DanRisk Rank:DesignProductionLong Term
Technical Details
Price & Stock

Parametrics

Source Content uid
BLF878
Rohs Code
符合
Part Life Cycle Code
Obsolete
Package Description
ROHS COMPLIANT, CERAMIC PACKAGE-4
Pin Count
4
Reach Compliance Code
unknown
ECCN Code
EAR99
Popularity
1812
Risk Rank
9.56
Additional Feature
HIGH RELIABILITY
Case Connection
SOURCE
Configuration
COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min
89 V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFM-F4
Number of Elements
2
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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