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BCP53TA

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Diodes Incorporated

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

Technical Details

Price & Stock

Parametrics

Rohs Code

不符合

Part Life Cycle Code

Transferred

Reach Compliance Code

unknown

ECCN Code

EAR99

Popularity

307

Risk Rank

7.36

Case Connection

COLLECTOR

Collector Current-Max (IC)

1 A

Collector-Emitter Voltage-Max

80 V

Configuration

SINGLE

DC Current Gain-Min (hFE)

JESD-30 Code

R-PDSO-G4

Number of Elements

Number of Terminals

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

PNP

Power Dissipation-Max (Abs)

1.5 W

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

DUAL

Transistor Application

AMPLIFIER

Transistor Element Material

SILICON

Transition Frequency-Nom (fT)

125 MHz

VCEsat-Max

0.5 V

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Pasadena, CA 91105, USA

Suzhou Office

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Suzhou City, Jiangsu Province, 215021

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BCP53TA

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BCP53TA

Parametrics

Price History

Stock History

Help

Related Sites

Contact Us

US Headquarters

Suzhou Office