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BC857CW-Q

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Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

Technical Details

Parametrics

Rohs Code

符合

Part Life Cycle Code

Active

Reach Compliance Code

compliant

ECCN Code

EAR99

Popularity

Risk Rank

7.48

Collector Current-Max (IC)

0.1 A

Collector-Base Capacitance-Max

3 pF

Collector-Emitter Voltage-Max

45 V

Configuration

SINGLE

DC Current Gain-Min (hFE)

420

JESD-30 Code

R-PDSO-G3

JESD-609 Code

Moisture Sensitivity Level

Number of Elements

Number of Terminals

Operating Temperature-Max

150 °C

Operating Temperature-Min

-65 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

PNP

Power Dissipation-Max (Abs)

0.2 W

Reference Standard

AEC-Q101; IEC-60134

Surface Mount

YES

Terminal Finish

TIN

Terminal Form

GULL WING

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Transition Frequency-Nom (fT)

100 MHz

VCEsat-Max

0.6 V

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BC857CW-Q

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BC857CW-Q

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