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Memory > EEPROMs

AT25128B-MA9MGV-T

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AT25128B-MA9MGV-T
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Microchip Technology Inc

EEPROM, 16KX8, Serial, CMOS, PDSO8

Market Average:
-
Total Inventory:
-
Lifecycle Status: Active
7.2HighRisk Rank:DesignProductionLong Term
Technical Details
Xrefs

Parametrics

Source Content uid
AT25128B-MA9MGV-T
Rohs Code
符合
Part Life Cycle Code
Active
Package Description
UDFN-8
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.51
Factory Lead Time
7 weeks
Popularity
0
Risk Rank
7.16
Clock Frequency-Max (fCLK)
5 MHz
Data Retention Time-Min
100
Endurance
1000000 Write/Erase Cycles
JESD-30 Code
R-PDSO-N8
JESD-609 Code
e3
Length
3 mm
Memory Density
131072 bit
Memory IC Type
EEPROM
Memory Width
8
Moisture Sensitivity Level
1
Number of Functions
1
Number of Ports
1
Number of Terminals
8
Number of Words
16384 words
Number of Words Code
16000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
16KX8
Package Body Material
PLASTIC/EPOXY
Package Code
HVSON
Package Equivalence Code
SOLCC8,.12,20
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial
SERIAL
Peak Reflow Temperature (Cel)
260
Programming Voltage
5 V
Screening Level
AEC-Q100
Seated Height-Max
0.6 mm
Serial Bus Type
SPI
Standby Current-Max
0.000013 A
Supply Current-Max
0.007 mA
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
MATTE TIN
Terminal Form
NO LEAD
Terminal Pitch
0.5 mm
Terminal Position
DUAL
Width
2 mm
Write Cycle Time-Max (tWC)
5 ms
Write Protection
HARDWARE/SOFTWARE
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