APT100GN120B2G中文资料_PDF数据手册

APT100GN120B2G

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Microchip Technology Inc

Insulated Gate Bipolar Transistor, 245A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-3

Technical Details

Price & Stock

Parametrics

Pbfree Code

不含铅

Rohs Code

符合

Part Life Cycle Code

Transferred

Package Description

ROHS COMPLIANT PACKAGE-3

Pin Count

Reach Compliance Code

unknown

ECCN Code

EAR99

Popularity

118

Risk Rank

7.19

Additional Feature

HIGH RELIABILITY

Case Connection

COLLECTOR

Collector Current-Max (IC)

245 A

Collector-Emitter Voltage-Max

1200 V

Configuration

SINGLE

Gate-Emitter Thr Voltage-Max

6.5 V

Gate-Emitter Voltage-Max

30 V

JESD-30 Code

R-PSFM-T3

JESD-609 Code

Number of Elements

Number of Terminals

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

960 W

Qualification Status

Not Qualified

Surface Mount

Terminal Finish

TIN SILVER COPPER

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Transistor Application

POWER CONTROL

Transistor Element Material

SILICON

Turn-off Time-Nom (toff)

935 ns

Turn-on Time-Nom (ton)

100 ns

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Suzhou City, Jiangsu Province, 215021

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APT100GN120B2G

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APT100GN120B2G

Parametrics

Price History

Stock History

Help

Related Sites

Contact Us

US Headquarters

Suzhou Office