AFV10700HR5中文资料_PDF数据手册

AFV10700HR5

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NXP

RF Power Field-Effect Transistor

Technical Details

Price & Stock

Parametrics

Source Content uid

AFV10700HR5

Rohs Code

符合

Part Life Cycle Code

Active

Reach Compliance Code

compliant

ECCN Code

EAR99

HTS Code

8541.29.00

Factory Lead Time

10 weeks

Date Of Intro

2017-05-28

Popularity

292

Risk Rank

2.12

Case Connection

SOURCE

Configuration

DS Breakdown Voltage-Min

105 V

FET Technology

Feedback Cap-Max (Crss)

1.16 pF

Highest Frequency Band

L BAND

JESD-30 Code

R-CDFM-F4

Number of Elements

Number of Terminals

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

225 °C

Operating Temperature-Min

-55 °C

Package Body Material

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Gain-Min (Gp)

18 dB

Surface Mount

YES

Terminal Form

FLAT

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

Transistor Application

AMPLIFIER

Transistor Element Material

SILICON

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AFV10700HR5

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AFV10700HR5

Parametrics

Price History

Stock History

Help

Related Sites

Contact Us

US Headquarters

Suzhou Office