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Memory > EEPROMs

25LC256T-M/MF

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25LC256T-M/MF
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Microchip Technology Inc

25LC256T-M/MF

Market Average:
-
Total Inventory:
-
Lifecycle Status: Active
7.2HighRisk Rank:DesignProductionLong Term
Technical Details

Parametrics

Source Content uid
25LC256T-M/MF
Rohs Code
符合
Part Life Cycle Code
Active
Package Description
DFN-8
Reach Compliance Code
compliant
Country Of Origin
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ECCN Code
3A001.A.2.C
HTS Code
8542.32.00.51
Factory Lead Time
7 weeks
Popularity
0
Risk Rank
7.18
YTEOL
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Additional Feature
2.5V TO 4.5V @ 5MHz
Clock Frequency-Max (fCLK)
10 MHz
Data Retention Time-Min
200
Endurance
1000000 Write/Erase Cycles
JESD-30 Code
R-PDSO-N8
JESD-609 Code
e3
Length
6 mm
Memory Density
262144 bit
Memory IC Type
EEPROM
Memory Width
8
Moisture Sensitivity Level
1
Number of Functions
1
Number of Ports
1
Number of Terminals
8
Number of Words
32768 words
Number of Words Code
32000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Organization
32KX8
Package Body Material
PLASTIC/EPOXY
Package Code
HVSON
Package Equivalence Code
SOLCC8,.25
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial
SERIAL
Peak Reflow Temperature (Cel)
260
Programming Voltage
5 V
Qualification Status
Not Qualified
Screening Level
TS 16949
Seated Height-Max
1 mm
Serial Bus Type
SPI
Standby Current-Max
0.000005 A
Supply Current-Max
0.006 mA
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
MILITARY
Terminal Finish
Matte Tin (Sn)
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Width
5 mm
Write Cycle Time-Max (tWC)
5 ms
Write Protection
HARDWARE
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