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Transistors > RF Power Field-Effect Transistors

15N10L-TA3-T

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RF Power Field-Effect Transistor,

Market Average：

-

Total Inventory：

-

Lifecycle Status： Active

Technical Details

Parametrics

Part Life Cycle Code

Active

Reach Compliance Code

compliant

ECCN Code

EAR99

Date Of Intro

2020-02-18

Popularity

0

Risk Rank

6.52

Configuration

DS Breakdown Voltage-Min

100 V

Drain Current-Max (ID)

14.7 A

Drain-source On Resistance-Max

0.11 Ω

FET Technology

Feedback Cap-Max (Crss)

65 pF

JEDEC-95 Code

TO-220AB

JESD-30 Code

R-PSFM-T3

Number of Elements

1

Number of Terminals

3

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

60 W

Pulsed Drain Current-Max (IDM)

30 A

Surface Mount

NO

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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