Part Intelligence
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
Manufacturer:
HARTING Technology Group
MPN:
RFD4N06L
Compliance:
Rohs certificate failed
Datasheet:
Documents
RFD4N06L Datasheet
ComSIT Asia
DISTRI：
unknown
Unit Price:
no price information
QTY：
-+
Stock/PKG:
1,200
MOQ:
1
MPQ:
1
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