Part Intelligence
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
Manufacturer:
Harris Semiconductor
MPN:
RFD4N06L
Compliance:
Rohs certificate failed
Datasheet:
Documents
RFD4N06L Datasheet
Rochester Electronics
DISTRI：
unknown
Deliver To:
Hong Kong and Taiwan
Unit Price:
- QTY CNY (w/ Tax) USD
- 1+ 0.0000 $0.3218
- 25+ 0.0000 $0.3153
- 100+ 0.0000 $0.3024
QTY：
-+
Total:
$0.32
Stock/PKG:
1,424
MOQ:
1
MPQ:
1
Deliver To：
Freight Rules：
Logistics Time：
3-5 days
Return and Exchange Rules
No unconditional returns or exchanges are supported.
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