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Homepage > Browse Parts > Transistors > IGBTs > NXH80B120H2Q0SG Details
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NXH80B120H2Q0SG

NXH80B120H2Q0SG
Added to BOM:

NXH80B120H2Q0SG
Added to Default List -

Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode Bare copper DBC, Q0, 24-BTRAY
Manufacturer:
ON Semiconductor
MPN:
NXH80B120H2Q0SG
Compliance:
Rohs certificate    Pb free
Documents
NXH80B120H2Q0SG Datasheet
Rochester Electronics
DISTRI:
unknown
Deliver To:
Hong Kong and Taiwan
Unit Price:
  • QTY CNY (w/ Tax) USD
  • 1+ 0.0000 $83.0720
  • 25+ 0.0000 $81.4110
  • 100+ 0.0000 $78.0890
More Prices
QTY:
-+
Total: $83.07
Stock/PKG:
28,543
MOQ:
1
MPQ:
1
Freight Rules:
Logistics Time:
3-5 days
Return and Exchange Rules
No unconditional returns or exchanges are supported.
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