Cannot fetch parts from BOM, please try again.

Update your browser

Your browser (Internet Explorer) is out of date.

Update your browser for more security, comfort and the best experience for this site.

Homepage > Browse Parts > Transistors > IGBTs > FS35R12KE3GBOSA1 Details
Part Intelligence
FS35R12KE3GBOSA1

FS35R12KE3GBOSA1
Added to BOM:

FS35R12KE3GBOSA1
Added to Default List -

Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, MODULE-28
Manufacturer:
Infineon
MPN:
FS35R12KE3GBOSA1
Compliance:
Rohs certificate    leaded
Documents
FS35R12KE3GBOSA1 Datasheet
Rochester Electronics
DISTRI:
unknown
Deliver To:
Hong Kong and Taiwan
Unit Price:
  • QTY CNY (w/ Tax) USD
  • 1+ 0.0000 $69.9600
  • 25+ 0.0000 $68.5630
  • 100+ 0.0000 $65.7580
More Prices
QTY:
-+
Total: $69.96
Stock/PKG:
17
MOQ:
1
MPQ:
1
Freight Rules:
Logistics Time:
3-5 days
Return and Exchange Rules
No unconditional returns or exchanges are supported.
Search more distributor results
Search
Minimum of 3 letters / numbers required.
Create New BOM