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Homepage > Browse Parts > Transistors > Power Field-Effect Transistors > BSZ160N10NS3GATMA1 Details
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BSZ160N10NS3GATMA1

BSZ160N10NS3GATMA1
Added to BOM:

BSZ160N10NS3GATMA1
Added to Default List -

Power Field-Effect Transistor, 8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Manufacturer:
Infineon
MPN:
BSZ160N10NS3GATMA1
Compliance:
Rohs certificate    leaded
Documents
BSZ160N10NS3GATMA1 Datasheet
Rochester Electronics China
DISTRI:
unknown
Deliver To:
Mainland China
Unit Price:
  • QTY CNY (w/ Tax) USD
  • 1+ ¥5.6974 0.0000
  • 25+ ¥5.5832 0.0000
  • 100+ ¥5.3558 0.0000
More Prices
QTY:
-+
Total: ¥5.70
Stock/PKG:
5,774
MOQ:
1
MPQ:
1
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