DRAM封装型号_DRAM厂家价格-bom2buy

型号

型号						Most Relevant								Technical																			Compliance			Operating Conditions					Physical											Dimensions			Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	最长访问时间	最大时钟频率 (fCLK)	刷新周期	访问模式	内存集成电路类型	其他特性	I/O 类型	交错的突发长度	功能数量	端口数量	字数代码	字数	工作模式	输出特性	自我刷新	连续突发长度	最大待机电流	最小待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	mfrid	包装说明	是否符合REACH标准	ECCN代码	HTS代码	YTEOL	COO	Date Of Intro	零件包装代码	针数
MT8KTF51264HZ-1G9P1 Micron Technology Inc		查询价格和库存			Yes	Active	34.3597 Gbit	64	512MX64	1.35 V				SINGLE BANK PAGE BURST	DDR3L DRAM MODULE	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX			1	1	512000000	536.8709 M	SYNCHRONOUS		YES					1.45 V	1.283 V	CMOS	COMMERCIAL	R-XZMA-N204				70 °C		260	30	204	UNSPECIFIED	DIMM		RECTANGULAR	MICROELECTRONIC ASSEMBLY	NO		NO LEAD	450 µm	ZIG-ZAG	30.15 mm	67.6 mm	3.8 mm	2190	MODULE-204	compliant	EAR99	8542.32.00.36	5.3
IS42S16320F-7TL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		160 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54	Not Qualified			70 °C				54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	TSOP2-54	compliant	EAR99	8542.32.00.28	4	Mainland China, Taiwan
AS4C64M8SC-7TIN Alliance Memory Inc		查询价格和库存			Yes	Active	536.8709 Mbit	8	64MX8	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	64000000	67.1089 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54			3	85 °C	-40 °C			54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	TSOP2-54	compliant	EAR99	8542.32.00.28	4	Taiwan	2018-10-08
IS42S16320F-7BL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		160 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PBGA-B54	Not Qualified			70 °C				54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	2070	TFBGA-54	compliant	EAR99	8542.32.00.28	4	Mainland China, Taiwan
IS42S16320F-7TLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		160 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54	Not Qualified			85 °C	-40 °C	NOT SPECIFIED	NOT SPECIFIED	54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	TSOP2-54	compliant	EAR99	8542.32.00.28	4	Mainland China, Taiwan
IS42S16320F-7BLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		160 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PBGA-B54	Not Qualified	e1	3	85 °C	-40 °C	260	30	54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	2070	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54	compliant	EAR99	8542.32.00.28	4	Mainland China, Taiwan
IS43DR16128C-25DBL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	2.1475 Gbit	16	128MX16	1.8 V	400 ps	400 MHz	8192	MULTI BANK PAGE BURST	DDR2 DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	4,8	30 mA		540 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84	Not Qualified			85 °C				84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2070	WBGA-84	compliant	EAR99	8542.32.00.36	4	Mainland China, Taiwan
IS43DR16160B-3DBL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	1.8 V	450 ps	333 MHz	8192	FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE	YES	4,8	25 mA		280 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84	Not Qualified	e1	3	85 °C				84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2070	TFBGA, BGA84,9X15,32	compliant	EAR99	8542.32.00.24	4	Mainland China, Taiwan
IS43DR16128C-25DBLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	2.1475 Gbit	16	128MX16	1.8 V	400 ps	400 MHz	8192	MULTI BANK PAGE BURST	DDR2 DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	4,8	30 mA		540 µA	1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84	Not Qualified			85 °C	-40 °C			84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2070	WBGA-84	compliant	EAR99	8542.32.00.36	4	Mainland China, Taiwan
AS4C4M32SA-6TCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	134.2177 Mbit	32	4MX32	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	60 mA		160 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G86		e3	3	70 °C		260	40	86	PLASTIC/EPOXY	TSOP2	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	MATTE TIN	GULL WING	500 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	TSOP2-86	compliant	EAR99	8542.32.00.02	4	Taiwan
MT4KTF25664HZ-1G9P1 Micron Technology Inc		查询价格和库存			Yes	Active	17.1799 Gbit	64	256MX64	1.35 V				SINGLE BANK PAGE BURST	DDR3L DRAM MODULE	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY			1	1	256000000	268.4355 M	SYNCHRONOUS		YES					1.45 V	1.283 V	CMOS	COMMERCIAL	R-XZMA-N204				70 °C		260	30	204	UNSPECIFIED	DIMM		RECTANGULAR	MICROELECTRONIC ASSEMBLY	NO		NO LEAD	600 µm	ZIG-ZAG	30.15 mm	67.6 mm	3.8 mm	2190	MODULE-204	compliant	EAR99	8542.32.00.36	5.25
AS4C64M8D2-25BIN Alliance Memory Inc		查询价格和库存			Yes	Active	536.8709 Mbit	8	64MX8	1.8 V	400 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	64000000	67.1089 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS		R-PBGA-B60			3					60	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10 mm	8 mm	1689	8 X 10 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60	compliant	EAR99	8542.32.00.28	4	Taiwan
AS4C512M16D3LB-12BIN Alliance Memory Inc		查询价格和库存			Yes	Active	8.5899 Gbit	16	512MX16	1.35 V		800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY	COMMON	8	1	1	512000000	536.8709 M	SYNCHRONOUS	3-STATE	YES	8	60 mA		470 µA	1.45 V	1.283 V	CMOS	INDUSTRIAL	R-PBGA-B96				95 °C	-40 °C			96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13.5 mm	9 mm	1689	FBGA-96	compliant	EAR99	8542.32.00.36	5.12	Taiwan	2019-05-24
AS4C512M16D3LB-12BCN Alliance Memory Inc		查询价格和库存			Yes	Active	8.5899 Gbit	16	512MX16	1.35 V		800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY	COMMON	8	1	1	512000000	536.8709 M	SYNCHRONOUS	3-STATE	YES	8	60 mA		470 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96				95 °C				96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13.5 mm	9 mm	1689	FBGA-96	compliant	EAR99	8542.32.00.36	5.12	Taiwan	2019-05-24
AS4C2M32S-7BCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	67.1089 Mbit	32	2MX32	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	2000000	2.0972 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PBGA-B90			3	70 °C				90	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	1689	8 X 13 MM, 1.20 MM HEIGHT, HALOGEN AND LEAD FREE, TFBGA-90	compliant	EAR99	8542.32.00.02	4	Taiwan		BGA	90
MT49H16M18SJ-25:B Micron Technology Inc		查询价格和库存			Yes	Active	301.9899 Mbit	18	16MX18	1.8 V				MULTI BANK PAGE BURST	DDR DRAM	AUTO REFRESH			1	1	16000000	16.7772 M	SYNCHRONOUS							1.9 V	1.7 V	CMOS		R-PBGA-B144						NOT SPECIFIED	NOT SPECIFIED	144	PLASTIC/EPOXY	TBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE	YES		BALL	1 mm	BOTTOM	1.2 mm	18.5 mm	11 mm	2190	TBGA,	compliant	EAR99	8542.32.00.28	4
AS4C4M32S-7BCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	134.2177 Mbit	32	4MX32	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	2,4,8				3.6 V	3 V	CMOS	COMMERCIAL	R-PBGA-B90			3	70 °C				90	PLASTIC/EPOXY	TFBGA	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	1689	8 X 13 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-90	compliant	EAR99	8542.32.00.02	4	Taiwan		BGA	90
AS4C32M16SB-7BIN Alliance Memory Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM		COMMON/SEPARATE	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	8 mA	3 V	120 µA	3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54				85 °C	-40 °C	NOT SPECIFIED	NOT SPECIFIED	54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689		compliant	EAR99	8542.32.00.28	4		2020-03-11
AS4C1M16S-7TCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	16.7772 Mbit	16	1MX16	3.3 V	5.4 ns			DUAL BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	1000000	1.0486 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G50			3	70 °C				50	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	20.95 mm	10.16 mm	1689	TSOPII-50	compliant	EAR99	8542.32.00.02	4	Taiwan		TSOP2	50
AS4C4M32SA-6TIN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	134.2177 Mbit	32	4MX32	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	60 mA		160 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G86		e3	3	85 °C	-40 °C	260	40	86	PLASTIC/EPOXY	TSOP2	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	MATTE TIN	GULL WING	500 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	TSOP2-86	compliant	EAR99	8542.32.00.02	4	Taiwan

型号						Most Relevant								Technical																			Compliance			Operating Conditions					Physical											Dimensions			Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	最长访问时间	最大时钟频率 (fCLK)	刷新周期	访问模式	内存集成电路类型	其他特性	I/O 类型	交错的突发长度	功能数量	端口数量	字数代码	字数	工作模式	输出特性	自我刷新	连续突发长度	最大待机电流	最小待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	mfrid	包装说明	是否符合REACH标准	ECCN代码	HTS代码	YTEOL	COO	Date Of Intro	零件包装代码	针数
MT8KTF51264HZ-1G9P1 Micron Technology Inc		查询价格和库存			Yes	Active	34.3597 Gbit	64	512MX64	1.35 V				SINGLE BANK PAGE BURST	DDR3L DRAM MODULE	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX			1	1	512000000	536.8709 M	SYNCHRONOUS		YES					1.45 V	1.283 V	CMOS	COMMERCIAL	R-XZMA-N204				70 °C		260	30	204	UNSPECIFIED	DIMM		RECTANGULAR	MICROELECTRONIC ASSEMBLY	NO		NO LEAD	450 µm	ZIG-ZAG	30.15 mm	67.6 mm	3.8 mm	2190	MODULE-204	compliant	EAR99	8542.32.00.36	5.3
IS42S16320F-7TL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		160 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54	Not Qualified			70 °C				54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	TSOP2-54	compliant	EAR99	8542.32.00.28	4	Mainland China, Taiwan
AS4C64M8SC-7TIN Alliance Memory Inc		查询价格和库存			Yes	Active	536.8709 Mbit	8	64MX8	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	64000000	67.1089 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54			3	85 °C	-40 °C			54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	TSOP2-54	compliant	EAR99	8542.32.00.28	4	Taiwan	2018-10-08
IS42S16320F-7BL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		160 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PBGA-B54	Not Qualified			70 °C				54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	2070	TFBGA-54	compliant	EAR99	8542.32.00.28	4	Mainland China, Taiwan
IS42S16320F-7TLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		160 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54	Not Qualified			85 °C	-40 °C	NOT SPECIFIED	NOT SPECIFIED	54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	TSOP2-54	compliant	EAR99	8542.32.00.28	4	Mainland China, Taiwan
IS42S16320F-7BLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		160 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PBGA-B54	Not Qualified	e1	3	85 °C	-40 °C	260	30	54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	2070	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54	compliant	EAR99	8542.32.00.28	4	Mainland China, Taiwan
IS43DR16128C-25DBL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	2.1475 Gbit	16	128MX16	1.8 V	400 ps	400 MHz	8192	MULTI BANK PAGE BURST	DDR2 DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	4,8	30 mA		540 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84	Not Qualified			85 °C				84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2070	WBGA-84	compliant	EAR99	8542.32.00.36	4	Mainland China, Taiwan
IS43DR16160B-3DBL Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	1.8 V	450 ps	333 MHz	8192	FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE	YES	4,8	25 mA		280 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84	Not Qualified	e1	3	85 °C				84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2070	TFBGA, BGA84,9X15,32	compliant	EAR99	8542.32.00.24	4	Mainland China, Taiwan
IS43DR16128C-25DBLI Integrated Silicon Solution Inc		查询价格和库存			Yes	Active	2.1475 Gbit	16	128MX16	1.8 V	400 ps	400 MHz	8192	MULTI BANK PAGE BURST	DDR2 DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	4,8	30 mA		540 µA	1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84	Not Qualified			85 °C	-40 °C			84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2070	WBGA-84	compliant	EAR99	8542.32.00.36	4	Mainland China, Taiwan
AS4C4M32SA-6TCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	134.2177 Mbit	32	4MX32	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	60 mA		160 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G86		e3	3	70 °C		260	40	86	PLASTIC/EPOXY	TSOP2	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	MATTE TIN	GULL WING	500 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	TSOP2-86	compliant	EAR99	8542.32.00.02	4	Taiwan
MT4KTF25664HZ-1G9P1 Micron Technology Inc		查询价格和库存			Yes	Active	17.1799 Gbit	64	256MX64	1.35 V				SINGLE BANK PAGE BURST	DDR3L DRAM MODULE	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY			1	1	256000000	268.4355 M	SYNCHRONOUS		YES					1.45 V	1.283 V	CMOS	COMMERCIAL	R-XZMA-N204				70 °C		260	30	204	UNSPECIFIED	DIMM		RECTANGULAR	MICROELECTRONIC ASSEMBLY	NO		NO LEAD	600 µm	ZIG-ZAG	30.15 mm	67.6 mm	3.8 mm	2190	MODULE-204	compliant	EAR99	8542.32.00.36	5.25
AS4C64M8D2-25BIN Alliance Memory Inc		查询价格和库存			Yes	Active	536.8709 Mbit	8	64MX8	1.8 V	400 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	64000000	67.1089 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS		R-PBGA-B60			3					60	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10 mm	8 mm	1689	8 X 10 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60	compliant	EAR99	8542.32.00.28	4	Taiwan
AS4C512M16D3LB-12BIN Alliance Memory Inc		查询价格和库存			Yes	Active	8.5899 Gbit	16	512MX16	1.35 V		800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY	COMMON	8	1	1	512000000	536.8709 M	SYNCHRONOUS	3-STATE	YES	8	60 mA		470 µA	1.45 V	1.283 V	CMOS	INDUSTRIAL	R-PBGA-B96				95 °C	-40 °C			96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13.5 mm	9 mm	1689	FBGA-96	compliant	EAR99	8542.32.00.36	5.12	Taiwan	2019-05-24
AS4C512M16D3LB-12BCN Alliance Memory Inc		查询价格和库存			Yes	Active	8.5899 Gbit	16	512MX16	1.35 V		800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY	COMMON	8	1	1	512000000	536.8709 M	SYNCHRONOUS	3-STATE	YES	8	60 mA		470 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96				95 °C				96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13.5 mm	9 mm	1689	FBGA-96	compliant	EAR99	8542.32.00.36	5.12	Taiwan	2019-05-24
AS4C2M32S-7BCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	67.1089 Mbit	32	2MX32	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	2000000	2.0972 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PBGA-B90			3	70 °C				90	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	1689	8 X 13 MM, 1.20 MM HEIGHT, HALOGEN AND LEAD FREE, TFBGA-90	compliant	EAR99	8542.32.00.02	4	Taiwan		BGA	90
MT49H16M18SJ-25:B Micron Technology Inc		查询价格和库存			Yes	Active	301.9899 Mbit	18	16MX18	1.8 V				MULTI BANK PAGE BURST	DDR DRAM	AUTO REFRESH			1	1	16000000	16.7772 M	SYNCHRONOUS							1.9 V	1.7 V	CMOS		R-PBGA-B144						NOT SPECIFIED	NOT SPECIFIED	144	PLASTIC/EPOXY	TBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE	YES		BALL	1 mm	BOTTOM	1.2 mm	18.5 mm	11 mm	2190	TBGA,	compliant	EAR99	8542.32.00.28	4
AS4C4M32S-7BCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	134.2177 Mbit	32	4MX32	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	2,4,8				3.6 V	3 V	CMOS	COMMERCIAL	R-PBGA-B90			3	70 °C				90	PLASTIC/EPOXY	TFBGA	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	1689	8 X 13 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-90	compliant	EAR99	8542.32.00.02	4	Taiwan		BGA	90
AS4C32M16SB-7BIN Alliance Memory Inc		查询价格和库存			Yes	Active	536.8709 Mbit	16	32MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM		COMMON/SEPARATE	1,2,4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	8 mA	3 V	120 µA	3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54				85 °C	-40 °C	NOT SPECIFIED	NOT SPECIFIED	54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689		compliant	EAR99	8542.32.00.28	4		2020-03-11
AS4C1M16S-7TCN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	16.7772 Mbit	16	1MX16	3.3 V	5.4 ns			DUAL BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	1000000	1.0486 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G50			3	70 °C				50	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	20.95 mm	10.16 mm	1689	TSOPII-50	compliant	EAR99	8542.32.00.02	4	Taiwan		TSOP2	50
AS4C4M32SA-6TIN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	134.2177 Mbit	32	4MX32	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	60 mA		160 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G86		e3	3	85 °C	-40 °C	260	40	86	PLASTIC/EPOXY	TSOP2	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	MATTE TIN	GULL WING	500 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	TSOP2-86	compliant	EAR99	8542.32.00.02	4	Taiwan

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