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DRAMs:

267,290 results
动态随机存取存储器(Dynamic Random Access Memory,DRAM)是一种半导体存储器,主要的作用原理是利用电容内存储电荷的多寡来代表一个二进制比特(bit)是1还是0。由于在现实中晶体管会有漏电电流的现象,导致电容上所存储的电荷数量并不足以正确的判别数据,而导致数据毁损。因此对于DRAM来说,周期性地充电是一个无可避免的要件。由于这种需要定时刷新的特性,因此被称为“动态”存储器。相对来说,静态存储器(SRAM)只要存入数据后,纵使不刷新也不会丢失记忆。
SRAMs (542,744)
DRAMs (267,290)
EEPROMs (149,118)
FIFOs (72,010)
OTP ROMs (38,069)
EPROMs (22,085)
MASK ROMs (10,088)
PROMs (70)
All filter conditions
  • All filter conditions
  • Parts
  • Access Mode
  • Access Time-Max
  • Additional Feature
  • Alternate Memory Width
  • Clock Frequency-Max (fCLK)
  • I/O Type
  • Interleaved Burst Length
  • JESD-30 Code
  • JESD-609 Code
  • Length
  • Manufacturer
  • Memory Density
  • Memory IC Type
  • Memory Width
  • Mixed Memory Type
  • Moisture Sensitivity Level
  • Number of Functions
  • Number of Ports
  • Number of Terminals
  • Number of Words
  • Number of Words Code
  • Operating Mode
  • Operating Temperature-Max
  • Operating Temperature-Min
  • Organization
  • Output Characteristics
  • Output Enable
  • Package Body Material
  • Package Code
  • Package Equivalence Code
  • Package Shape
  • Package Style
  • Parallel/Serial
  • Part Life Cycle Code
  • Pbfree Code
  • Peak Reflow Temperature (Cel)
Parts Access Mode (19)
Access Time-Max (50)
0.12500.163125188250
-
464419344964
-
Clock Frequency-Max (fCLK) (50)
662 133665831 1001 6162 133
-
8133.3583971102133.35
-
Manufacturer (50)
Memory Density (50)
4 096309 237 645 3124 09677 309 414 400154 618 824 704231 928 235 008309 237 645 312
-
Memory Width (26)
15121129257384512
-
1813568
-
256137 438 953 47225634 359 738 56068 719 476 864103 079 215 168137 438 953 472
-
25632 000 000 0002568 000 000 19216 000 000 12832 000 000 000
-
50125506988106125
-
-5510-55-39-22-610
-
Organization (50)
Parts
Parts Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
Datasheet Price/Stock
Risk Rank Pbfree Code Rohs Code
Part Life Cycle Code Memory Density Memory Width Organization Supply Voltage-Nom (Vsup)
Access Time-Max Clock Frequency-Max (fCLK) Refresh Cycles
Access Mode Memory IC Type Additional Feature I/O Type Interleaved Burst Length Number of Functions Number of Ports Number of Words Code Number of Words Operating Mode Output Characteristics Reverse Pinout
Self Refresh
Sequential Burst Length
Standby Current-Max
Supply Current-Max
Supply Voltage-Max (Vsup)
Supply Voltage-Min (Vsup)
Technology Temperature Grade
JESD-30 Code Qualification Status
JESD-609 Code Moisture Sensitivity Level Operating Temperature-Max Operating Temperature-Min Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s)
Number of Terminals Package Body Material Package Code Package Equivalence Code Package Shape Package Style Surface Mount
Terminal Finish
Terminal Form
Terminal Pitch
Terminal Position
Seated Height-Max
Length Width
mfrid
Package Description
Reach Compliance Code
Country Of Origin
ECCN Code
HTS Code
Date Of Intro
YTEOL
Part Package Code
Pin Count
AS4C16M32SC-7TIN
Alliance Memory Inc
Query price and inventory
Yes Active 536.8709 Mbit 32 16MX32 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 3 85 °C -40 °C 86 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-86 compliant Taiwan EAR99 8542.32.00.28 2018-10-08 4
AS4C16M16SA-6TIN
Alliance Memory Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
AS4C16M16SA-6TCN
Alliance Memory Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 260 40 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
AS4C8M16SA-6TIN
Alliance Memory Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 3 85 °C -40 °C 260 40 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT48LC4M16A2P-6A:J
Micron Technology Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 compliant 4
AS4C8M16SA-6TCN
Alliance Memory Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C8M16SA-6TAN
Alliance Memory Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 6.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 3 105 °C -40 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN AND LEAD FREE, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT41K128M16JT-107:K
Micron Technology Inc
Query price and inventory
Yes Active 2.1475 Gbit 16 128MX16 1.35 V 195 ps 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 219 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 Not Qualified e1 85 °C 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 compliant EAR99 8542.32.00.36 5.1
IS42S16320F-7TL-TR
Integrated Silicon Solution Inc
Query price and inventory
Yes Yes Active 536.8709 Mbit 16 32MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2-54 compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
MT41K256M8DA-125:K
Micron Technology Inc
Query price and inventory
Yes Active 2.1475 Gbit 8 256MX8 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH COMMON 8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 8 12 mA 156 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 Not Qualified e1 3 95 °C 260 30 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm 2190 compliant EAR99 8542.32.00.36 5.1 BGA 78
AS4C4M16SA-7TCNTR
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 2018-10-04 4
AS4C4M16SA-6TINTR
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 e3 3 85 °C -40 °C 54 PLASTIC/EPOXY TFBGA SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin (Sn) BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 1689 FBGA-54 compliant Taiwan EAR99 8542.32.00.02 2018-10-04 4
MT46V32M16P-5B:J
Micron Technology Inc
Query price and inventory
Yes Yes Active 536.8709 Mbit 16 32MX16 2.6 V 700 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 2,4,8 5 mA 230 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 3 70 °C 260 30 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 TSOP-66 compliant EAR99 8542.32.00.28 4.25 TSOP 66
AS4C32M16D2A-25BAN
Alliance Memory Inc
Query price and inventory
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 3 85 °C 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 1689 FBGA-84 compliant Taiwan EAR99 8542.32.00.28 4
S27KS0642GABHI020
Infineon Technologies AG
Query price and inventory
Yes Active 67.1089 Mbit 8 8MX8 1.8 V 200 MHz HYPERRAM COMMON 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 220 µA 25 µA 2 V 1.7 V CMOS R-PBGA-B24 3 85 °C -40 °C 24 PLASTIC/EPOXY VBGA BGA24,5X5,40 RECTANGULAR GRID ARRAY, VERY THIN PROFILE YES BALL 1 mm BOTTOM 1 mm 8 mm 6 mm 2065 compliant 4
AS4C512M16D3LA-10BCN
Alliance Memory Inc
Query price and inventory
Yes Active 8.5899 Gbit 16 512MX16 1.35 V MULTI BANK PAGE BURST DDR DRAM MODULE AUTO/SELF REFRESH 1 1 512000000 536.8709 M SYNCHRONOUS YES 1.425 V 1.275 V CMOS OTHER R-PBGA-B96 3 95 °C 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13.5 mm 9 mm 1689 FBGA-96 compliant Taiwan EAR99 8542.32.00.36 2019-03-07 4
MT41J128M16JT-125:K
Micron Technology Inc
Query price and inventory
Yes Yes Active 2.1475 Gbit 16 128MX16 1.5 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 202 µA 1.575 V 1.425 V CMOS OTHER R-PBGA-B96 Not Qualified e1 3 85 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 8 X 14 MM, LEAD FREE, FBGA-96 compliant EAR99 8542.32.00.36 5 BGA 96
IS43DR16320E-25DBLI
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B84 85 °C -40 °C 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm 2070 BGA-84 compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
AS4C1G8D3LA-10BCN
Alliance Memory Inc
Query price and inventory
Yes Active 8.5899 Gbit 8 1GX8 1.35 V MULTI BANK PAGE BURST DDR DRAM MODULE AUTO/SELF REFRESH 1 1 1000000000 1.0737 G SYNCHRONOUS YES 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 3 95 °C 78 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 10.6 mm 9 mm 1689 FBGA-78 compliant Taiwan EAR99 8542.32.00.36 2019-03-07 4
MT40A1G8SA-062E:R
Micron Technology Inc
Query price and inventory
Yes Active 8.5899 Gbit 8 1GX8 1.2 V 8192 MULTI BANK PAGE BURST DDR4 DRAM AUTO/SELF REFRESH COMMON 8 1 1 1000000000 1.0737 G SYNCHRONOUS NO YES 1.26 V 1.14 V CMOS R-PBGA-B78 95 °C NOT SPECIFIED NOT SPECIFIED 78 PLASTIC/EPOXY TFBGA BGA78,6X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 11 mm 7.5 mm 2190 compliant 5
Parts Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
Datasheet Price/Stock
Risk Rank Pbfree Code Rohs Code
Part Life Cycle Code Memory Density Memory Width Organization Supply Voltage-Nom (Vsup)
Access Time-Max Clock Frequency-Max (fCLK) Refresh Cycles
Access Mode Memory IC Type Additional Feature I/O Type Interleaved Burst Length Number of Functions Number of Ports Number of Words Code Number of Words Operating Mode Output Characteristics Reverse Pinout
Self Refresh
Sequential Burst Length
Standby Current-Max
Supply Current-Max
Supply Voltage-Max (Vsup)
Supply Voltage-Min (Vsup)
Technology Temperature Grade
JESD-30 Code Qualification Status
JESD-609 Code Moisture Sensitivity Level Operating Temperature-Max Operating Temperature-Min Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s)
Number of Terminals Package Body Material Package Code Package Equivalence Code Package Shape Package Style Surface Mount
Terminal Finish
Terminal Form
Terminal Pitch
Terminal Position
Seated Height-Max
Length Width
mfrid
Package Description
Reach Compliance Code
Country Of Origin
ECCN Code
HTS Code
Date Of Intro
YTEOL
Part Package Code
Pin Count
AS4C16M32SC-7TIN
Alliance Memory Inc
Query price and inventory
Yes Active 536.8709 Mbit 32 16MX32 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 16000000 16.7772 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 3 85 °C -40 °C 86 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-86 compliant Taiwan EAR99 8542.32.00.28 2018-10-08 4
AS4C16M16SA-6TIN
Alliance Memory Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
AS4C16M16SA-6TCN
Alliance Memory Inc
Query price and inventory
Yes Active 268.4355 Mbit 16 16MX16 3.3 V 5 ns 166 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS YES 1,2,4,8,FP 25 mA 60 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 260 40 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.24 4
AS4C8M16SA-6TIN
Alliance Memory Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 3 85 °C -40 °C 260 40 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT48LC4M16A2P-6A:J
Micron Technology Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 compliant 4
AS4C8M16SA-6TCN
Alliance Memory Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
AS4C8M16SA-6TAN
Alliance Memory Inc
Query price and inventory
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 6.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 e3 3 105 °C -40 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 0.400 INCH, HALOGEN AND LEAD FREE, PLASTIC, TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 4
MT41K128M16JT-107:K
Micron Technology Inc
Query price and inventory
Yes Active 2.1475 Gbit 16 128MX16 1.35 V 195 ps 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 219 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 Not Qualified e1 85 °C 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 compliant EAR99 8542.32.00.36 5.1
IS42S16320F-7TL-TR
Integrated Silicon Solution Inc
Query price and inventory
Yes Yes Active 536.8709 Mbit 16 32MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2070 TSOP2-54 compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
MT41K256M8DA-125:K
Micron Technology Inc
Query price and inventory
Yes Active 2.1475 Gbit 8 256MX8 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH COMMON 8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 8 12 mA 156 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 Not Qualified e1 3 95 °C 260 30 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm 2190 compliant EAR99 8542.32.00.36 5.1 BGA 78
AS4C4M16SA-7TCNTR
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 e3 3 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1689 TSOP2-54 compliant Taiwan EAR99 8542.32.00.02 2018-10-04 4
AS4C4M16SA-6TINTR
Alliance Memory Inc
Query price and inventory
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 e3 3 85 °C -40 °C 54 PLASTIC/EPOXY TFBGA SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin (Sn) BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm 1689 FBGA-54 compliant Taiwan EAR99 8542.32.00.02 2018-10-04 4
MT46V32M16P-5B:J
Micron Technology Inc
Query price and inventory
Yes Yes Active 536.8709 Mbit 16 32MX16 2.6 V 700 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 2,4,8 5 mA 230 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e3 3 70 °C 260 30 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm 2190 TSOP-66 compliant EAR99 8542.32.00.28 4.25 TSOP 66
AS4C32M16D2A-25BAN
Alliance Memory Inc
Query price and inventory
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 3 85 °C 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 1689 FBGA-84 compliant Taiwan EAR99 8542.32.00.28 4
S27KS0642GABHI020
Infineon Technologies AG
Query price and inventory
Yes Active 67.1089 Mbit 8 8MX8 1.8 V 200 MHz HYPERRAM COMMON 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 220 µA 25 µA 2 V 1.7 V CMOS R-PBGA-B24 3 85 °C -40 °C 24 PLASTIC/EPOXY VBGA BGA24,5X5,40 RECTANGULAR GRID ARRAY, VERY THIN PROFILE YES BALL 1 mm BOTTOM 1 mm 8 mm 6 mm 2065 compliant 4
AS4C512M16D3LA-10BCN
Alliance Memory Inc
Query price and inventory
Yes Active 8.5899 Gbit 16 512MX16 1.35 V MULTI BANK PAGE BURST DDR DRAM MODULE AUTO/SELF REFRESH 1 1 512000000 536.8709 M SYNCHRONOUS YES 1.425 V 1.275 V CMOS OTHER R-PBGA-B96 3 95 °C 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13.5 mm 9 mm 1689 FBGA-96 compliant Taiwan EAR99 8542.32.00.36 2019-03-07 4
MT41J128M16JT-125:K
Micron Technology Inc
Query price and inventory
Yes Yes Active 2.1475 Gbit 16 128MX16 1.5 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 202 µA 1.575 V 1.425 V CMOS OTHER R-PBGA-B96 Not Qualified e1 3 85 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 2190 8 X 14 MM, LEAD FREE, FBGA-96 compliant EAR99 8542.32.00.36 5 BGA 96
IS43DR16320E-25DBLI
Integrated Silicon Solution Inc
Query price and inventory
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B84 85 °C -40 °C 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm 2070 BGA-84 compliant Mainland China, Taiwan EAR99 8542.32.00.28 4
AS4C1G8D3LA-10BCN
Alliance Memory Inc
Query price and inventory
Yes Active 8.5899 Gbit 8 1GX8 1.35 V MULTI BANK PAGE BURST DDR DRAM MODULE AUTO/SELF REFRESH 1 1 1000000000 1.0737 G SYNCHRONOUS YES 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 3 95 °C 78 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 10.6 mm 9 mm 1689 FBGA-78 compliant Taiwan EAR99 8542.32.00.36 2019-03-07 4
MT40A1G8SA-062E:R
Micron Technology Inc
Query price and inventory
Yes Active 8.5899 Gbit 8 1GX8 1.2 V 8192 MULTI BANK PAGE BURST DDR4 DRAM AUTO/SELF REFRESH COMMON 8 1 1 1000000000 1.0737 G SYNCHRONOUS NO YES 1.26 V 1.14 V CMOS R-PBGA-B78 95 °C NOT SPECIFIED NOT SPECIFIED 78 PLASTIC/EPOXY TFBGA BGA78,6X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 11 mm 7.5 mm 2190 compliant 5
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