型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
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最长访问时间 | 最大时钟频率 (fCLK) |
刷新周期
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访问模式 | 内存集成电路类型 | 其他特性 | 备用内存宽度 | 数据保留时间-最小值 | 耐久性 | I/O 类型 | I2C控制字节 | 交错的突发长度 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 并行/串行 |
编程电压
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就绪/忙碌
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反向引出线
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自我刷新
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连续突发长度
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串行总线类型
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最大待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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最长写入周期时间 (tWC)
|
写保护
|
JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
筛选级别
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处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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Source Content uid
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mfrid
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零件包装代码
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包装说明
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针数
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制造商包装代码
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是否符合REACH标准
|
COO
|
ECCN代码
|
HTS代码
|
YTEOL
|
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CAT93C66VI-GT3
onsemi
|
查询价格和库存 |
|
Yes | Yes | Active | 4.096 kbit | 16 | 256X16 | 5 V | 2 MHz | EEPROM | 100 YEAR DATA RETENTION | 8 | 100 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | MICROWIRE | 10 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | CAT93C66VI-GT3 | 2260 | SOIC 8, 150 mils | 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | 8 | 751BD | compliant | Philippines | EAR99 | 8542.32.00.51 | 5.9 | |||||||||||||||||
24LC16B/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 100 µA | 3 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | 10 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC16B/SN | 2188 | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 6.2 | ||||||||||||||||
CAT25020VI-GT3
onsemi
|
查询价格和库存 |
|
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 20 MHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | SPI | 2 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | CAT25020VI-GT3 | 2260 | SOIC 8, 150 mils | MS-012, SOIC-8 | 8 | 751BD | compliant | Philippines | EAR99 | 8542.32.00.51 | 5.9 | ||||||||||||||||||
24LC16B-I/SNG
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 400 kHz | EEPROM | 1000K ERASE/WRITE CYCLES; CAN BE ORGANIZ... more | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 2000 | 2.048 k | SYNCHRONOUS | SERIAL | I2C | 1 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | 24LC16B-I/SNG | 2188 | SOIC | 0.150 INCH, ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 6.2 | |||||||||||||||||
24LC16BT-I/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 3 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 1 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC16BT-I/SN | 2188 | SOIC | SOIC-8 | 8 | compliant | Taiwan, Thailand | 9 | |||||||||||||||||
24LC16B-I/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 3 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 1 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC16B-I/SN | 2188 | SOIC | SOIC-8 | 8 | compliant | Taiwan, Thailand | 9 | |||||||||||||||||
24LC16BT-E/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 3 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 5 µA | 3 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC16BT-E/SN | 2188 | SOIC | SOIC-8 | 8 | compliant | Taiwan, Thailand | EAR99 | 8542.32.00.51 | 9 | |||||||||||||||
93LC46B-I/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46B-I/SN | 2188 | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | |||||||||||||
93LC46B/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 4.5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 4.5 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46B/SN | 2188 | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 5.9 | ||||||||||||||||||
93LC46BT/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 4.5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 4.5 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46BT/SN | 2188 | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 5.9 | ||||||||||||||||||
93LC46BT-I/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46BT-I/SN | 2188 | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | |||||||||||||
CAT25010VI-GT3
onsemi
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 8 | 128X8 | 5 V | 20 MHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1 | 128 | 128 words | SYNCHRONOUS | SERIAL | SPI | 2 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | CAT25010VI-GT3 | 2260 | SOIC 8, 150 mils | MS-012, SOIC-8 | 8 | 751BD | compliant | Philippines | EAR99 | 8542.32.00.51 | 5.9 | ||||||||||||||||||
93C46BT-I/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 3 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93C46BT-I/SN | 2188 | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | |||||||||||||
MR2A16ACYS35
Everspin Technologies
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 28 mA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | 3 | 85 °C | -40 °C | 260 | 40 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 1623927 | TSOP2 | 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 | 44 | compliant | Taiwan | EAR99 | 8542.32.00.71 | ||||||||||||||||||||||||||||||
93LC46AT/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 8 | 128X8 | 4.5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 128 | 128 words | SYNCHRONOUS | SERIAL | 4.5 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46AT/SN | 2188 | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | ||||||||||||||||||
AS4C4M16SA-7TCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 | |||||||||||||||||||||||||||||||||
93C46A-I/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 8 | 128X8 | 5 V | 3 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 128 | 128 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93C46A-I/SN | 2188 | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | ||||||||||||||
MT41K128M16JT-125:K
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.35 V | 225 ps | 800 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 195 µA | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B96 | Not Qualified | e1 | 95 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | 2190 | BGA | 96 | compliant | EAR99 | 8542.32.00.36 | 5.1 | ||||||||||||||||||||
93C46B-I/SN
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 3 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93C46B-I/SN | 2188 | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 9 | |||||||||||||
AS4C4M16SA-6TIN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 |